SUM110N06-3m9H Vishay Siliconix N-Channel 60-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0039 at VGS = 10 V 110a 200 • • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package High Threshold Voltage At High Temperature 100 % Rg Tested RoHS COMPLIANT D TO-263 G G D S Top View S Ordering Information: SUM110N06-3m9H-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) 110a IDM Pulsed Drain Current Single Pulse Avalanche Current L = 0.1 mH Single Pulse Avalanche Energy TC = 25 °C Maximum Power Dissipationb 440 IAS 70 EAS 245 375c PD TA = 25 °Cd TJ, Tstg Operating Junction and Storage Temperature Range V 110a ID TC = 125 °C Unit 3.75 - 55 to 175 A mJ W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient d PCB Mount Junction-to-Case (Drain) Symbol Limit RthJA 40 RthJC 0.4 Unit °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 73236 S-70534-Rev. C, 26-Mar-07 www.vishay.com 1 SUM110N06-3m9H Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 3.4 IGSS VDS = 0 V, VGS = ± 20 V Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS 100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 VDS = 60 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V ID(on) 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea 4.5 gfs VDS = 15 V, ID = 30 A µA 0.0039 0.0063 VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea nA A 0.00325 VGS = 10 V, ID = 30 A, TJ = 125 °C rDS(on) V Ω 0.0082 30 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Chargec Qg Gate-Source Chargec Qgs c 15 800 VGS = 0 V, VDS = 25 V, f = 1 MHz 600 f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 110 A 0.6 1.2 1.8 200 300 Qgd 45 Turn-On Delay Timec td(on) 45 Rise Turn-Off Delay Timec Fall Timec tr td(off) VDD = 30 V, RL = 0.27 Ω ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics (TC = 25 70 160 240 75 115 14 25 IS 110 ISM 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 85 A, VGS = 0 V trr IRM(REC) Qrr ns °C)b Pulsed Current Continuous Current Ω nC 80 Gate-Drain Charge Timec pF 1050 IF = 85 A, di/dt = 100 A/µs A 1.1 1.5 V 65 100 ns 4.4 6.6 A 143 330 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73236 S-70534-Rev. C, 26-Mar-07 SUM110N06-3m9H Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 250 VGS = 10 thru 7 V 200 I D - Drain Current (A) I D - Drain Current (A) 200 6V 150 100 50 150 100 TC = 125 °C 50 25 °C 5V - 55 °C 0 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 300 0.006 250 25 °C 200 125 °C 0.005 r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 150 100 50 0.004 VGS = 10 V 0.003 0.002 0.001 0 0.000 0 15 30 45 60 75 90 0 20 40 ID - Drain Current (A) 80 100 120 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 21000 20 VGS - Gate-to-Source Voltage (V) 18000 Ciss C - Capacitance (pF) 60 15000 12000 9000 6000 Coss Crss 3000 0 VDS = 30 V ID = 110 A 16 12 8 4 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 73236 S-70534-Rev. C, 26-Mar-07 50 60 0 50 100 150 200 250 300 350 400 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUM110N06-3m9H Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 VGS = 10 V ID = 30 A I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 1.7 1.4 1.1 TJ = 150 °C TJ = 25 °C 10 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (°C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 74 72 ID = 10 mA 70 IAV (A) at TA = 25 °C V(BR)DSS (V) I Dav (a) 100 10 IAV (A) at TA = 150 °C 68 66 64 1 62 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (Sec) Avalanche Current vs. Time www.vishay.com 4 1 60 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 73236 S-70534-Rev. C, 26-Mar-07 SUM110N06-3m9H Vishay Siliconix THERMAL RATINGS 1000 300 10 µs *Limited by rDS(on) 250 I D - Drain Current (A) ID - Drain Current (A) 100 200 150 100 0 0 25 50 75 10 1 ms 10 ms dc, 100 ms 1 Limited By Package 50 100 µs 100 125 150 TC = 25 °C Single Pulse 0.1 0.1 175 TC - Case Temperature (°C) 1 *VGS Maximum Avalanche and Drain Current vs. Case Temperature 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73236. Document Number: 73236 S-70534-Rev. C, 26-Mar-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1