D44VH D

D44VH10(NPN),
D45VH10 (PNP)
Complementary Silicon
Power Transistors
These complementary silicon power transistors are designed for
high−speed switching applications, such as switching regulators and
high frequency inverters. The devices are also well−suited for drivers
for high power switching circuits.
Features
•
•
•
•
•
Fast Switching
Key Parameters Specified @ 100°C
Low Collector−Emitter Saturation Voltage
Complementary Pairs Simplify Circuit Designs
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
80
Vdc
Collector−Emitter Voltage
VCEV
100
Vdc
Emitter Base Voltage
VEB
7.0
Vdc
IC
15
Adc
Collector Current − Peak (Note 1)
ICM
20
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
83
0.67
W
W/°C
−55 to 150
°C
Collector Current − Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
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15 A
COMPLEMENTARY SILICON
POWER TRANSISTORS
80 V, 83 W
PNP
NPN
COLLECTOR 2, 4
COLLECTOR 2, 4
1
BASE
1
BASE
EMITTER 3
EMITTER 3
4
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Width ≤ 6.0 ms, Duty Cycle ≤ 50%.
D4xVH10G
AYWW
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RqJC
1.5
°C/W
Thermal Resistance, Junction to Ambient
RqJA
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
TL
275
°C
x
A
Y
WW
G
= 4 or 5
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 8
1
Device
Package
Shipping
D44VH10G
TO−220
(Pb−Free)
50 Units/Rail
D45VH10G
TO−220
(Pb−Free)
50 Units/Rail
Publication Order Number:
D44VH/D
D44VH10 (NPN), D45VH10 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
80
−
−
−
−
−
−
10
100
−
−
10
35
20
−
−
−
−
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 25 mAdc, IB = 0)
Collector−Emitter Cutoff Current
(VCE = Rated VCEV, VBE(off) = 4.0 Vdc)
(VCE = Rated VCEV, VBE(off) = 4.0 Vdc, TC = 100°C)
ICEV
Emitter Base Cutoff Current
(VEB = 7.0 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 2.0 Adc, VCE = 1.0 Vdc)
(IC = 4.0 Adc, VCE = 1.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.4 Adc)
D44VH10
(IC = 8.0 Adc, IB = 0.8 Adc)
D45VH10
(IC = 15 Adc, IB = 3.0 Adc, TC = 100°C)
D44VH10
D45VH10
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.4 Adc)
D44VH10
(IC = 8.0 Adc, IB = 0.8 Adc)
D45VH10
(IC = 8.0 Adc, IB = 0.4 Adc, TC = 100°C)
D44VH10
(IC = 8.0 Adc, IB = 0.8 Adc, TC = 100°C)
D45VH10
VBE(sat)
−
Vdc
−
−
0.4
−
−
1.0
−
−
−
−
0.8
1.5
Vdc
−
−
1.2
−
−
1.0
−
−
1.1
−
−
1.5
−
50
−
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IC = 0, ftest = 1.0 MHz)
D44VH10
D45VH10
MHz
Cob
pF
−
−
120
275
−
−
td
−
−
50
tr
−
−
250
ts
−
−
700
tf
−
−
90
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
(VCC = 20 Vdc, IC = 8.0 Adc, IB1 = IB2 = 0.8 Adc)
Fall Time
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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2
D44VH10 (NPN), D45VH10 (PNP)
1000
1000
VCE = 1 V
25°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 1 V
125°C
−40°C
100
125°C
25°C
100
−40°C
10
10
0.01
0.1
1
0.01
10
10
IC, COLLECTOR CURRENT (AMPS)
Figure 1. D44VH10 DC Current Gain
Figure 2. D45VH10 DC Current Gain
1000
VCE = 5 V
VCE = 5 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
1
IC, COLLECTOR CURRENT (AMPS)
1000
25°C
125°C
−40°C
100
10
125°C
25°C
100
−40°C
10
0.01
0.1
1
0.01
10
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. D44VH10 DC Current Gain
Figure 4. D45VH10 DC Current Gain
0.6
0.40
VCE(sat) @ IC/IB = 10
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
0.1
0.35
0.30
−40°C
0.25
0.20
25°C
0.15
125°C
0.10
0.05
VCE(sat) @ IC/IB = 10
0.5
0.4
−40°C
0.3
25°C
125°C
0.2
0.1
0
0
0.1
1
0.1
10
1
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 5. D44VH10 ON−Voltage
Figure 6. D45VH10 ON−Voltage
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3
10
D44VH10 (NPN), D45VH10 (PNP)
1.4
VBE(sat) @ IC/IB = 10
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
1.2
−40°C
1.0
0.8
125°C
0.6
25°C
0.4
0.2
0
−40°C
1.0
0.8
125°C
0.6
25°C
0.4
0.2
0
0.1
1
10
0.1
Figure 7. D44VH10 ON−Voltage
Figure 8. D45VH10 ON−Voltage
PD, POWER DISSIPATION (WATTS)
1.0 ms
100 ms
10
10 ms
TC ≤ 70° C
dc
DUTY CYCLE ≤ 50%
1.0
1.0 ms
0.5
0.3
0.2
D44H/45H8
D44H/45H10,11
TA TC
3.0 60
2.0 40
TC
2.0 3.0 5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
TA
1.0 20
0
0.1
1.0
0
0
20
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 9. Maximum Rated Forward Bias
Safe Operating Area
1.0
0.7
0.5
60
100
120
80
T, TEMPERATURE (°C)
140
160
Figure 10. Power Derating
0.2
0.2
0.1
0.1
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.02
0.03
0.02
40
D = 0.5
0.3
0.07
0.05
10
IC, COLLECTOR CURRENT (AMPS)
50
30
20
5.0
3.0
2.0
1
IC, COLLECTOR CURRENT (AMPS)
100
IC, COLLECTOR CURRENT (AMPS)
VBE(sat) @ IC/IB = 10
1.2
0.01
SINGLE PULSE
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.01 0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
t, TIME (ms)
Figure 11. Thermal Response
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4
20
50
100
200
500 1.0 k
D44VH10 (NPN), D45VH10 (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and the
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D44VH/D
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