E03723A1Y

SLD333V
1W High Power Laser Diode
Description
The SLD333V is a 1W high power laser diode
designed to have a uniform emission area that is
suitable for the applications of measurement and
printing, etc.
It adopts a φ9 package that is easy to handle.
M-248
Features
• High power
Recommended optical power output: Po = 1W
• High-optical power density: 1W/100µm
(Emitting line width)
Structure
AlGaAs Quantum Well structure laser diode
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
Pomax
1.1
• Reverse voltage
VR LD
2
PD
15
• Operating temperature (Tc) Topr
–10 to +30
• Storage temperature
Tstg
–40 to +85
W
V
V
°C
°C
Operating Lifetime
MTTF 10,000H (effective value) at Po = 1W, Tc = 25°C
Warranty
This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is
shorter.
Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the
analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the
product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull distribution.
Pin Configuration
2
1
3
1. LD cathode
2. PD anode
3. COMMON
Bottom View
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E03723A1Y
SLD333V
Electrical and Optical Characteristics (Tc = 25°C)
Item
Symbol
Tc: Case temperature
Conditions
Min.
Typ.
Max.
Unit
—
0.2
0.5
A
Threshold current
Ith
Operating current
Iop
Po = 1.0W
—
1.2
1.5
A
Operating voltage
Vop
Po = 1.0W
—
2.0
3.0
V
Wavelength
λp
Po = 1.0W
790
—
840
nm
4
9
15
degree
27
32
40
degree
—
—
±5
degree
—
—
±3
degree
—
—
±50
µm
Radiation
angle
Parallel
θ//
Perpendicular
θ⊥
Positional
accuracy
Angle
Position
Δφ//
Δφ⊥
Po = 1.0W
Po = 1.0W
ΔX, ΔY
Differential efficiency
ηD
Po = 1.0W
0.5
0.9
—
W/A
Monitor current
Imon
Po = 1.0W
0.3
1.5
6
mA
–2–
SLD333V
Notes on Operation
Care should be taken for the following points when using this product.
(1) This product corresponds to a Class 4 product under IEC60825-1 and JIS standard C6802 "Laser Product
Emission Safety Standards".
LASER DIODE
LASER DIODE
This product complies with 21
CFR Part 1040.10 and 1040.11
LASER RADIATION
AVOID EYE OR SKIN EXPOSURE TO
DIRECT OR SCATTERED RADIATION
MAXIMUM OUTPUT
WAVELENGTH
OVER 1 W
600 - 950 nm
CLASS IV LASER PRODUCT
Sony Corporation
AVOID EXPOSURE
Laser radiation is
emitted from this
aperture.
1-7-1 Konan,
Minato-ku,Tokyo
108-0075 Japan
(2) Eye protection against laser beams
Take care not to allow laser beams to enter your eyes under any circumstances.
For observing laser beams, always use safety goggles that block laser beams. Usage of IR scopes, IR
cameras and fluorescent plates is also recommended for monitoring laser beams safely.
(3) Gallium Arsenide
This product uses gallium arsenide (GaAs). This is not a problem for normal use, but GaAs vapors may be
potentially hazardous to the human body. Therefore, never crush, heat to the maximum storage temperature or
higher, or place the product in your mouth.
In addition, the following disposal methods are recommended when disposing of this product.
1. Engaging the services of a contractor certified in the collection, transport and intermediate treatment
of items containing arsenic.
2. Managing the product through to final disposal as specially managed industrial waste which is
handled separately from general industrial waste and household waste.
(4) Prevention of surge current and electrostatic discharge
Laser diodes are most sensitive to electrostatic discharge among semiconductors. When a large current is
passed through the laser diode for even an extremely short time, the strong light emitted from the laser
diode promotes deterioration and then destruction of the laser diode. Therefore, note that surge current
should not flow to the laser diode driving circuit from switches and others. Also, if the laser diode is handled
carelessly, it may be destroyed instantly because electrostatic discharge is easily applied by a human
body. Therefore, be extremely careful about overcurrent and electrostatic discharge.
Also, use the power supply that was designed not to exceed the optical power output specified at the
absolute maximum ratings.
(5) Use for special applications
This product is not designed or manufactured for use in equipment used under circumstances where failure
may pose a risk to life and limb, or result in significant material damage, etc.
Consult your Sony sales representative when investigating use for medical, vehicle, nuclear power control
or other special applications.
–3–
SLD333V
(6) Environment-related Substances to be Controlled
No substances classified at Level 1 (immediate ban) of Sony Technical Standard, SS-00259,“Management
regulations for the Environment-related Substances to be Controlled”. The excerpt from SS-00259 is
introduced on following URL.
http://www.sony.net/SonyInfo/procurementinfo/ss00259/
–4–
SLD333V
Package Outline
Unit: mm
M-248 (LO-11)
Reference
Slot
0.4
1.0
3
2
1
Photo
Diode
0
φ9.0 – 0.015
φ7.7 MAX
Reference
Plane
LD Chip
3 – φ0.45
7.0 MAX
∗2.45
φ3.5
1.5 3.4 MAX
0.6 MAX
φ6.9 MAX
Window
Glass
∗Optical
Distance = 2.55 ± 0.05
PCD φ2.54
SONY CODE
PACKAGE MASS
M-248
1.2g
EIAJ CODE
JEDEC CODE
–5–
Sony Corporation
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