E06144

High Power SPDT Switch
CXG1189AXR
Description
The CXG1189AXR is a high power SPDT (Single Pole Doble Throw) switch MMIC used in wireless
communication systems, for example, GSM handsets, GSM/UMTS dual mode handsets.
The Sony JPHEMT process is used for low insertion loss.
(Applications: Antenna switch for cellular handsets, GSM, GSM/UMTS dual mode)
Features
‹ Low insertion loss: [email protected], [email protected], [email protected]
‹ Low harmonics level: –35dBm (Max.)
Package
Small package size: 12-pin XQFN
Structure
GaAs JPHEMT MMIC
This IC is ESD sensitive device. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license
by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating
the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
-1-
E06144
CXG1189AXR
Absolute Maximum Ratings
(Ta = 25°C)
Š Control voltage
Vctl
5
V
Š Input power max. [824 to 915MHz]
36
dBm
[Duty cycle = 12.5 to 50%]
Š Input power max. [1710 to 1910MHz]
34
dBm
[Duty cycle = 12.5 to 50%]
Š Input power max. [1920 to 1980MHz]
32
dBm
Š Operating temperature
Topr
–35 to +85
°C
Š Storage temperature
Tstg
–65 to +150
°C
Š Maximum power dissipation
PD
400
mW
・Copper-clad lamination of glass board (4 layers) : 30mm square, t = 0.8mm, FR-4.
Note) Use this product without exceeding the PD value specified in this specification.
If it is used with exceeding the PD value even for a moment, the heat generated by the operation may
cause the degradation or breakdown of the product.
-2-
CXG1189AXR
Block Diagram and Recommended Circuit
RF1
GND
GND
CRF
6
5
4
7
GND
3
F1
F2
8
RF2
GND
2
RF3
CRF
CRF
F3
F4
9
GND
1
10
Rctl (1kΩ)
11
GND
12
Cbypass
(100pF)
Cbypass
(100pF)
Rctl (1kΩ)
GND
CTLA
CTLB
When using this IC, the following external components should be used:
Rctl: This resistor is used to improve ESD performance. 1kΩ is recommended
CRF: This capacitor is used for RF decoupling and must be used for all applications.
Cbypass: This capacitor is used for DC line filtering. 100pF is recommended.
Truth Table
CTLA
CTLB
ON State
F1
F2
F3
F4
L
H
RF1 – RF2
ON
OFF
OFF
ON
H
L
RF1 – RF3
OFF
ON
ON
OFF
DC Bias Condition
(Ta = 25°C)
Item
Min.
Typ.
Max.
Unit
Vctl (H)
2.6
2.8
3.6
V
Vctl (L)
0
—
0.4
V
-3-
CXG1189AXR
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Path
RF1 – RF2
Insertion loss
IL
RF1 – RF3
Harmonics*1
2fo
3fo
2fo
3fo
P0.2dB compression
input power
Control current
P0.2dB
Ictl
Unit
824 to 960MHz
0.25
0.40
dB
1710 to 1990MHz
0.30
0.45
dB
1920 to 2170MHz
0.35
0.50
dB
824 to 960MHz
0.25
0.40
dB
1710 to 1990MHz
0.30
0.45
dB
1920 to 2170MHz
0.35
0.50
dB
dB
1710 to 1990MHz
25
31
dB
1920 to 2170MHz
25
30
dB
824 to 960MHz
25
32
dB
1710 to 2170MHz
25
31
dB
1920 to 2170MHz
25
30
dB
824 to 960MHz
1.2
—
1710 to 2170MHz
1.2
—
1920 to 2170MHz
1.2
—
RF1 – RF2
RF1 – RF3
824 to 915MHz
Vctl = 2.8/0V
–45
–35
dBm
–42
–35
dBm
RF1 – RF2
RF1 – RF3
1710 to 1910MHz
Vctl = 2.8/0V
–42
–35
dBm
–40
–35
dBm
RF1 – RF2
RF1 – RF3
1920 to 1980MHz
Vctl = 2.8/0V
–46
–35
dBm
–46
–35
dBm
RF1 – RF2
RF1 – RF3
824 to 915MHz
Vctl = 2.8/0V
34.5
dBm
RF1 – RF2
RF1 – RF3
1710 to 1910MHz
Vctl = 2.8/0V
32.5
dBm
RF1 – RF2
RF1 – RF3
1920 to 1980MHz
Vctl = 2.8/0V
31
dBm
VSWR
3fo
Max.
32
ISO.
2fo
Typ.
25
RF1 – RF3
VSWR
Min.
824 to 960MHz
RF1 – RF2
Isolation
Condition
Vctl = 2.8V
2
6
μA
Electrical characteristics are measured with all RF ports terminated in 50Ω.
*1
Harmonics measured with Tx inputs harmonically matched. The use of harmonic matching is recommended
to ensure optimum performance.
1. Power incident on Tx, Pin = 34dBm, 824 to 915MHz, Vctl (H) = 2.8V, Vctl (L) = 0V
2. Power incident on Tx, Pin = 32dBm, 1710 to 1910MHz, Vctl (H) = 2.8V, Vctl (L) = 0V
3. Power incident on Tx, Pin = 29dBm, 1920 to 1980MHz, Vctl (H) = 2.8V, Vctl (L) = 0V
-4-
CXG1189AXR
Package Outline
(Unit: mm)
LEAD PLATING SPECIFICATIONS
ITEM
-5-
SPEC.
LEAD MATERIAL
COPPER ALLOY
SOLDER COMPOSITION
Sn-Bi Bi:1-4wt%
PLATING THICKNESS
5-18µm
Sony Corporation
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