Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC994 v03.1013 AMPLIFIERS - LINEAR & POWER - CHIP GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Typical Applications Features The HMC994 is ideal for: High P1dB Output Power: 28 dBm • Test Instrumentation High Psat Output Power: 30 dBm • Microwave Radio & VSAT High Gain: 14 dB • Military & Space High Output IP3: 36 dBm • Telecom Infrastructure Supply Voltage: +10 V @ 250 mA • Fiber Optics 50 Ohm Matched Input/Output Die Size: 2.82 x 1.5 x 0.1 mm Functional Diagram General Description The HMC994 is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 30 GHz. The amplifier provides 14 dB of gain, 36 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 250 mA from a +10 V supply. The HMC994 exhibits a slightly positive gain slope from 5 to 25 GHz, making it ideal for EW, ECM, Radar and test equipment applications. The HMC994 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 250 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. DC - 18 11.5 13.5 Typ. Max. Min. 18 - 26 12 14 11.5 Typ. Max. Units 26 - 30 GHz 14 dB Gain Flatness ±0.25 ±0.15 ±0.4 dB Gain Variation Over Temperature 0.011 0.017 0.02 dB/ °C dB Input Return Loss 18 18 16 Output Return Loss 20 16 14 dB 26.5 dBm 28 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 26 28 25 27 24 29 29 Output Third Order Intercept (IP3) 38 34 33 dBm Noise Figure 3.5 4 4.5 dB Supply Current (Idd) (Vdd= 10V, Vgg1= -0.6V Typ.) 250 250 250 mA * Adjust Vgg1 between -2 to 0 V to achieve Idd = 250 mA typical. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC994 v03.1013 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz 18 10 16 0 14 -10 12 -20 10 -30 8 -40 6 0 5 10 15 20 25 30 35 40 0 5 10 FREQUENCY (GHz) S21 S11 +25C S22 20 25 30 0 -10 -10 -20 -30 +85C -55C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature -40 -20 -30 -40 0 5 10 15 20 25 30 0 5 10 FREQUENCY (GHz) +25C 15 20 25 30 FREQUENCY (GHz) +85C +25C -55C Noise Figure vs. Temperature +85C -55C P1dB vs. Temperature 10 32 30 P1dB (dBm) 8 NOISE FIGURE (dB) 15 FREQUENCY (GHz) AMPLIFIERS - LINEAR & POWER - CHIP Gain vs. Temperature 20 GAIN (dB) RESPONSE (dB) Gain & Return Loss 6 4 28 26 24 2 22 20 0 0 5 10 15 20 25 30 0 5 10 +25C +85C 15 20 25 30 FREQUENCY (GHz) FREQUENCY (GHz) -55C +25C +85C -55C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC994 v03.1013 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz 32 30 30 28 28 Psat (dBm) P1dB (dBm) Psat vs. Temperature 32 26 26 24 24 22 22 20 20 0 5 10 15 20 25 0 30 5 10 FREQUENCY (GHz) +8V +10V +25C +11V 20 25 30 +85C -55C Output IP3 vs. Temperature @ Pout = 16 dBm / Tone 44 32 42 30 40 IP3 (dBm) 28 26 38 36 34 24 32 22 30 28 20 0 5 10 15 20 25 0 30 5 10 +8V +10V +25C +11V 20 25 30 +85C -55C Output IM3 @ Vdd = +8V 44 90 42 80 40 70 60 38 IM3 (dBc) IP3 (dBm) 15 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Supply Voltage @ Pout = 16 dBm / Tone 36 34 50 40 30 32 20 30 10 28 0 0 5 10 15 20 25 30 2 4 6 FREQUENCY (GHz) +8V 3 15 FREQUENCY (GHz) Psat vs. Supply Voltage Psat (dBm) AMPLIFIERS - LINEAR & POWER - CHIP P1dB vs. Supply Voltage +10V 8 10 12 14 16 18 20 Pout/TONE (dBm) +11V 2 GHz 6 GHz 10 GHz 14 GHz 18 GHz 22 GHz 26 GHz 30 GHz For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC994 v03.1013 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz 90 80 80 70 70 60 60 50 40 50 40 30 30 20 20 10 10 0 0 2 4 6 8 10 12 14 16 18 20 2 4 6 8 Pout/TONE (dBm) 2 GHz 6 GHz 10 GHz 14 GHz 18 GHz 22 GHz 26 GHz 30 GHz Reverse Isolation vs. Temperature 14 16 18 20 14 GHz 18 GHz 22 GHz 26 GHz 30 GHz Power Compression @ 16 GHz Pout (dBm), GAIN (dB), PAE (%) 32 -10 -20 ISOLATION (dB) 12 2 GHz 6 GHz 10 GHz 0 -30 -40 -50 -60 -70 -80 28 24 20 16 12 8 4 0 0 4 8 12 16 20 24 28 32 36 40 44 0 3 6 FREQUENCY (GHz) +25C +85C 9 12 15 18 INPUT POWER (dBm) -55C Pout Gain & Power vs. Supply Voltage @ 16 GHz Gain PAE Power Dissipation 35 3 POWER DISSIPATION (W) Gain (dB), P1dB (dBm), Psat (dBm) 10 Pout/TONE (dBm) AMPLIFIERS - LINEAR & POWER - CHIP Output IM3 @ Vdd = +11V 90 IM3 (dBc) IM3 (dBc) Output IM3 @ Vdd = +10V 30 25 20 15 10 2 1 0 8 9 10 11 0 3 6 Vdd (V) Gain P1dB 9 12 15 18 INPUT POWER (dBm) Psat 4 GHz 8 GHz 12 GHz 16 GHz 20 GHz 24 GHz 28 GHz For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC994 v03.1013 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Second Harmonics vs. Vdd @ Pout = 14 dBm 70 70 60 60 SECOND HARMONIC (dBc) SECOND HARMONIC (dBc) 50 40 30 20 10 50 40 30 20 10 0 0 0 4 8 12 16 20 24 0 4 8 FREQUENCY(GHz) +25C 12 16 20 24 FREQUENCY(GHz) +85C -55C +8V +10V +11V Second Harmonics vs. Pout 70 SECOND HARMONIC (dBc) AMPLIFIERS - LINEAR & POWER - CHIP Second Harmonics vs. Temperature @ Pout = 14 dBm 60 50 40 30 20 10 0 0 4 8 12 16 20 24 FREQUENCY(GHz) +4 dBm +6 dBm +8 dBm +10 dBm +12 dBm +14 dBm +16 dBm Absolute Maximum Ratings Drain Bias Voltage (Vdd) 12V Output Power into VSWR >7:1 28 dBm Gate Bias Voltage (Vgg1) -3 to 0 Vdc Storage Temperature -65 to 150 °C For Vdd = 12V, Vgg2 = 5.5V Idd < 200mA Operating Temperature -55 to 85 °C Gate Bias Voltage (Vgg2) For Vdd between 8.5V to 11V, Vgg2 = (Vdd - 6.5V) up to 4.5V For Vdd < 8.5V, Vgg2 must remain > 2V RF Input Power (RFIN) 25 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) 3.02 W (derate 46.6 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) 5 21.4 °C/W ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +8 250 +10 250 +11 250 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC994 v03.1013 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz AMPLIFIERS - LINEAR & POWER - CHIP Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section on our website for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC994 v03.1013 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz AMPLIFIERS - LINEAR & POWER - CHIP Pad Descriptions 7 Pad Number Function Description 1 RFIN This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required. 2 VGG2 Gate control 2 for amplifier. Attach bypass capacitors per application circuit herein. For nominal operation +3.5V should be applied to Vgg2. 4, 7 ACG2, ACG4 Low frequency termination. Attach bypass capacitor per application circuit herein. 3 ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein. 5 RFOUT & VDD RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 6 ACG3 Low frequency termination. Attach bypass capacitors per application circuit herein. 8 VGG1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC994 v03.1013 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz AMPLIFIERS - LINEAR & POWER - CHIP Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500 mA. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 HMC994 v03.1013 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz AMPLIFIERS - LINEAR & POWER - CHIP Assembly Diagram 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC994 v03.1013 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. AMPLIFIERS - LINEAR & POWER - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10