Si5480DU Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.016 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 Qg (Typ.) 11 nC PowerPAK ChipFET Single 2 D D 4 D G D 7 S 6 COMPLIANT • Load Switch, PA Switch, and Battery Switch for Portable Applications • DC-DC Synchronous Rectification 3 D 8 RoHS APPLICATIONS 1 D • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile S D Marking Code AD 5 XXX G Lot Traceability and Date Code Part # Code Bottom View S Ordering Information: Si5480DU-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current 12a ID 10.7b, c 8.6b, c 30 IDM TC = 25 °C TA = 25 °C TC = 70 °C TA = 25 °C 2.6b, c 31 20 PD W 3.1b, c TA = 70 °C 2b, c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range A 12a IS TC = 25 °C Maximum Power Dissipation V 12a TA = 70 °C Pulsed Drain Current Unit Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f t≤5s Symbol Typical Maximum RthJA 34 40 Unit °C/W RthJC 3 4 Steady State Maximum Junction-to-Case (Drain) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 °C/W. Document Number: 73585 S-81448-Rev. B, 23-Jun-08 www.vishay.com 1 Si5480DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 1 mA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 33 mV/°C - 6.2 1 3 V ± 100 ns VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 30 µA A VGS = 10 V, ID = 7.2 A 0.013 0.016 VGS = 4.5 V, ID = 6.1 A 0.018 0.022 VDS = 15 V, ID = 7.2 A 23 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 1230 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10.7 A VDS = 15 V, VGS = 4.5 V, ID = 10.7 A td(off) 22.5 34 11 17 4.4 f = 1 MHz VDD = 15 V, RL = 1.7 Ω ID ≅ 8.6 A, VGEN = 4.5 V, Rg = 1 Ω Ω 5.9 100 150 140 210 35 55 tf 15 25 td(on) 10 15 10 15 40 60 8 15 tr td(off) nC 3.7 td(on) tr pF 210 115 VDD = 15 V, RL = 1.7 Ω ID ≅ 8.6 A, VGEN = 10 V, Rg = 1 Ω tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 12 30 IS = 8.6 A, VGS = 0 V IF = 8.6 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.85 1.2 V 20 40 ns 15 30 nC 13 7 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73585 S-81448-Rev. B, 23-Jun-08 Si5480DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 thru 5 V 4V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 6 TC = 125 °C 12 6 2V 0 0.0 18 TC = 25 °C 3V TC = - 55 °C 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VDS - Drain-to-Source Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1800 0.030 1500 0.026 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 2 0.022 VGS = 4.5 V 0.018 Ciss 1200 900 600 Coss 0.014 300 VGS = 10 V 0.010 Crss 0 0 6 12 18 24 30 0 5 ID - Drain Current (A) 10 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID = 10.7 A 1.6 8 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 15 VDS = 15 V 6 VDS = 24 V 4 VGS = 10 V ID = 7.2 A 1.4 1.2 1.0 0.8 2 0.6 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73585 S-81448-Rev. B, 23-Jun-08 20 25 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si5480DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted R DS(on) - Drain-to-Source On-Resistance (mΩ) 30 I S - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.2 0.4 0.6 0.8 1.0 0.05 ID = 7.2 A 0.04 TA = 125 °C 0.03 0.02 TA = 25 °C 0.01 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.6 50 2.4 2.0 Power (W) VGS(th) (V) 40 ID = 250 µA 2.2 1.8 1.6 30 20 1.4 10 1.2 1.0 - 50 - 25 0 25 50 75 100 125 0 150 0.001 0.01 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 BVDSS Limited Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73585 S-81448-Rev. B, 23-Jun-08 Si5480DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 35 40 30 Power Dissipation (W) ID - Drain Current (A) 32 24 16 Package Limited 8 25 20 15 10 5 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73585 S-81448-Rev. B, 23-Jun-08 www.vishay.com 5 Si5480DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 75 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 10-4 Single Pulse 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73585. www.vishay.com 6 Document Number: 73585 S-81448-Rev. B, 23-Jun-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000