SI5410DU-T1-GE3

New Product
Si5410DU
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
ID (A)a
RDS(on) (Ω)
40
0.018 at VGS = 10 V
12
0.021 at VGS = 4.5 V
12
Qg (Typ.)
10 nC
PowerPAK ChipFET Single
1
2
Marking Code
D
3
D
D
G
D
7
Lot Traceability
and Date Code
4
Part # Code
S
6
RoHS
COMPLIANT
D
XXX
D
D
8
AJ
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
• 100 % UIS Tested
APPLICATIONS
• Load Switch, PA Switch, and Battery
Switch for Portable Applications
• DC-DC Synchronous Rectification
G
S
5
Bottom View
S
N-Channel MOSFET
Ordering Information: Si5410DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
Continuous Source-Drain Diode Current
12a
ID
9.8b, c
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
7.9b, c
30
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 70 °C
TA = 25 °C
IAS
2.6b, c
19
EAS
18
mJ
31
20
PD
W
3.1b, c
TA = 70 °C
2b, c
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
A
12a
IS
TC = 25 °C
Maximum Power Dissipation
V
12a
TA = 70 °C
Pulsed Drain Current
Unit
Soldering Recommendations (Peak Temperature)d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
Typical
Maximum
t≤5s
RthJA
34
40
Steady State
RthJC
3
4
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 69827
S-81448-Rev. B, 23-Jun-08
www.vishay.com
1
New Product
Si5410DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
40
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
45
mV/°C
-7
1.2
3
V
± 100
nA
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
20
µA
A
VGS = 10 V, ID = 6.6 A
0.015
0.018
VGS = 4.5 V, ID = 6.1 A
0.017
0.021
VDS = 15 V, ID = 6.6 A
30
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
1350
VDS = 20 V, VGS = 0 V, f = 1 MHz
70
VDS = 20 V, VGS = 10 V, ID = 9.8 A
VDS = 20 V, VGS = 4.5 V, ID = 9.8 A
td(off)
21
32
10
15
4.5
f = 1 MHz
VDD = 20 V, RL = 2.5 Ω
ID ≅ 7.9 A, VGEN = 4.5 V, Rg = 1 Ω
Ω
3.5
25
40
15
25
25
40
tf
12
20
td(on)
10
15
15
25
22
35
10
15
tr
td(off)
nC
3.1
td(on)
tr
pF
150
VDD = 20 V, RL = 2.5 Ω
ID ≅ 7.9 A, VGEN = 10 V, Rg = 1 Ω
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
12
30
IS = 7.9 A, VGS = 0 V
IF = 7.9 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
25
40
ns
22
35
nC
15
10
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69827
S-81448-Rev. B, 23-Jun-08
New Product
Si5410DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
10
VGS = 10 thru 4 V
TC = - 55 °C
8
I D - Drain Current (A)
I D - Drain Current (A)
25
20
15
10
6
4
TC = 25 °C
2
5
TC = 125 °C
VGS = 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
1.0
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.0
3.5
35
40
125
150
1800
1500
0.022
0.019
C - Capacitance (pF)
Ciss
VGS = 4.5 V
0.016
VGS = 10 V
1200
900
600
0.013
Coss
300
0.010
Crss
0
0
5
10
15
20
25
30
0
5
ID - Drain Current (A)
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
ID = 9.8 A
ID = 6.6 A
VDS = 20 V
1.6
8
VGS = 10 V
VDS = 32 V
6
4
2
1.4
(Normalized)
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1.5
VDS - Drain-to-Source Voltage (V)
0.025
RDS(on) - On-Resistance (Ω)
0.5
1.2
1.0
0.8
0
0
5
10
15
Qg - TotalGateCharge(nC)
Gate Charge
Document Number: 69827
S-81448-Rev. B, 23-Jun-08
20
25
0.6
- 50
- 25
0
25
50
75
100
TJ - JunctionTemperature(°C)
On-Resistance vs. Junction Temperature
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New Product
Si5410DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.040
100
ID = 6.6 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.035
TJ = 150 °C
10
TJ = 25 °C
0.030
0.025
TA = 125 °C
0.020
0.015
TA = 25 °C
1
0.0
0.010
0.2
0.4
0.6
0.8
1.0
0
1.2
2
VSD - Source-to-DrainVoltage(V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.6
50
2.4
ID = 250 µA
40
Power (W)
VGS(th) (V)
2.2
2.0
1.8
30
20
1.6
10
1.4
1.2
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
TJ - Temperature (°C)
0.1
1
10
100
1000
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
I D - Drain Current (A)
100 µs
10
1 ms
1
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1s
10 s
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 69827
S-81448-Rev. B, 23-Jun-08
New Product
Si5410DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
35
40
30
Power Dissipation (W)
I D - Drain Current (A)
30
20
Package Limited
10
25
20
15
10
5
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69827
S-81448-Rev. B, 23-Jun-08
www.vishay.com
5
New Product
Si5410DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 75 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
10-4
Single Pulse
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69827.
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Document Number: 69827
S-81448-Rev. B, 23-Jun-08
Package Information
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Vishay Siliconix
PowerPAK® ChipFET® Case Outline
D
(7)
(6)
(5)
(1)
(2)
(3)
(4)
E
(8)
Pin #1
indicator
Side view of single
e
b
H
D1
D(2)
D2
K
D(3)
L
G(4)
K1
D2
SI(1)
GI(2)
S2(3)
D1(8)
D1(7)
D2(6)
Detail Z
G2(4)
K2
L
D(1)
A1
C
A
Z
Side view of dual
E1
E2
E3
H
D3
D(8)
D(7)
D(6)
S(5)
K3
Backside view of dual pad
Backside view of single pad
DIM.
D2(5)
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.70
0.75
0.85
0.028
0.030
0.033
A1
0
-
0.05
0
-
0.002
b
0.25
0.30
0.35
0.010
0.012
0.014
C
0.15
0.20
0.25
0.006
0.008
0.010
D
2.92
3.00
3.08
0.115
0.118
0.121
D1
1.75
1.87
2.00
0.069
0.074
0.079
D2
1.07
1.20
1.32
0.042
0.047
0.052
D3
0.20
0.25
0.30
0.008
0.010
0.012
E
1.82
1.90
1.98
0.072
0.075
0.078
E1
1.38
1.50
1.63
0.054
0.059
0.064
E2
0.92
1.05
1.17
0.036
0.041
0.046
E3
0.45
0.50
0.55
0.018
0.020
0.022
e
0.65 BSC
0.026 BSC
H
0.15
0.20
0.25
0.006
0.008
0.010
K
0.25
-
-
0.010
-
-
K1
0.30
-
-
0.012
-
-
K2
0.20
-
-
0.008
-
-
K3
0.20
-
-
0.008
-
-
L
0.30
0.35
0.40
0.012
0.014
0.016
C14-0630-Rev. E, 21-Jul-14
DWG: 5940
Note
• Millimeters will govern
Document Number: 73203
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 21-Jul-14
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® ChipFET® Single
0.225
(0.009)
0.350
(0.014)
0.650
(0.026)
0.200
(0.008)
0.300
(0.012)
0.300
(0.012)
0.100
(0.004)
1.500
(0.059)
1.900
(0.075)
0.250
(0.010)
0.500
(0.020)
0.350
(0.014)
0.350
(0.014)
1.870
(0.074)
0.305
(0.012)
2.575
(0.101)
Recommended Minimum Pads
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 69948
Revision: 21-Jan-08
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9
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Disclaimer
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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Revision: 02-Oct-12
1
Document Number: 91000