NSS30101LT1G 30 V, 2 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 30 VOLTS 2.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 100 mW COLLECTOR 3 1 BASE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 1.0 A ICM 2.0 A Symbol Max Unit PD (Note 1) 310 mW 2.5 mW/°C RθJA (Note 1) 403 °C/W PD (Note 2) 710 mW 5.7 mW/°C RθJA (Note 2) 176 °C/W Total Device Dissipation (Single Pulse < 10 sec.) PDsingle 575 mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Collector Current − Continuous Collector Current − Peak 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient August, 2009 − Rev. 1 1 VS6 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 X 1.0 inch Pad. © Semiconductor Components Industries, LLC, 2009 VS6M G G 1 Device Package Shipping† NSS30101LT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS30101L/D NSS30101LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 30 − 50 − 5.0 − − 0.1 − 0.1 − 0.1 300 300 200 − 900 − − − − 0.200 0.125 0.075 − 1.1 − 1.1 100 − − 15 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = 30 Vdc) ICES Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 50 mA, VCE = 5.0 V) (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 100 mA) (IC = 0.5 A, IB = 50 mA) (IC = 0.1 A, IB = 1.0 mA) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.1 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = 1.0 mA, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz fT Output Capacitance (f = 1.0 MHz) Cobo V V V MHz pF 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% 1.0 1.0 0.9 0.8 0.7 0.8 0.7 IC = 1 A 0.6 VCE (V) VCE (V) 0.9 IC = 2 A 0.5 0.4 0.3 0 0.5 Ic/Ib = 100 0.4 0.3 IC = 500 mA 0.2 0.1 0.6 0.1 IC = 100 mA 0.001 Ic/Ib = 10 0.2 0.01 Ib (A) 0.1 0 0.2 0.001 0.01 0.1 Ic (A) Figure 1. VCE versus Ib Figure 2. VCE versus Ic http://onsemi.com 2 1 2 NSS30101LT1G 800 700 1.2 VCE = 5 V VCE = 5 V +125°C 1.0 600 VBE(on) (V) +25°C hFE 500 400 300 −55°C −55°C 0.8 0.6 0.4 +25°C +125°C 200 0.2 100 0 0.001 0.01 0.1 1 0 2 0.001 0.01 Ic (A) Figure 3. hFE versus Ic 2 IC COLLECTOR CURRENT (A) 10 1.0 Ic/Ib = 10 0.8 VBE (V) 1 Figure 4. VBE(on) versus Ic 1.2 Ic/Ib = 100 0.6 0.4 0.2 0 0.1 Ic (A) 0.001 0.01 0.1 1 1 1 ms 0.01 2 10 ms 100 ms 0.1 1s SINGLE PULSE Tamb = 25°C 0.1 1 Ic (A) 0.2 100 VCE (V) Figure 5. VBE(sat) versus Ic 0.5 dc 10 Figure 6. Safe Operating Area 0.1 1.0E+00 0.05 0.02 D = 0.01 Rthja , (t) 1.0E-01 1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 7. Normalized Thermal Response http://onsemi.com 3 10 100 1000 NSS30101LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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