NSS40200L D

NSS40200L, NSV40200L
40 V, 2.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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−40 VOLTS
2.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 80 mW
SOT−23 (TO−236)
CASE 318
STYLE 6
Features
• NSV Prefix for Automotive and Other Applications Requiring
•
COLLECTOR
3
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
1
BASE
2
EMITTER
MARKING DIAGRAM
VA M G
G
1
VA = Specific Device Code*
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Specific Device Code, Date Code or overbar
orientation and/or location may vary
depending upon manufacturing location.
This is a representation only and actual
devices may not match this drawing exactly.
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 7
1
Package
Shipping†
NSS40200LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
NSV40200LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS40200L/D
NSS40200L, NSV40200L
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−40
Vdc
Collector-Base Voltage
VCBO
−40
Vdc
Emitter-Base Voltage
VEBO
−7.0
Vdc
IC
−2.0
A
ICM
−4.0
A
Base Current − Peak
IBM
−300
mA
Electrostatic Discharge
ESD
Rating
Collector Current − Continuous
Collector Current − Peak
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
Max
Unit
460
3.7
mW
mW/°C
°C/W
270
540
4.3
mW
mW/°C
°C/W
230
Total Device Dissipation
(Single Pulse < 10 sec)
PDsingle
(Note 3)
710
mW
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm2, 1 oz. copper traces.
2. FR− 4 @ 500 mm2, 1 oz. copper traces.
3. Thermal response.
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2
NSS40200L, NSV40200L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −40 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = −7.0 Vdc)
IEBO
Vdc
−40
−
−
−40
−
−
−7.0
−
−
−
−
−0.1
−
−
−0.1
250
220
180
150
−
300
−
−
−
−
−
−
−
−
−
−
−0.010
−0.080
−0.135
−0.135
−0.017
−0.095
−0.170
−0.170
−
−
−0.900
−
−
−0.900
100
−
−
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 4)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −0.010 A) (Note 5)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.01 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
V
V
V
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Cibo
−
−
325
pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
Cobo
−
−
62
pF
td
−
−
60
ns
Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tr
−
−
120
ns
Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
ts
−
−
400
ns
Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tf
−
−
130
ns
SWITCHING CHARACTERISTICS
Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. Guaranteed by design but not tested.
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3
NSS40200L, NSV40200L
TYPICAL CHARACTERISTICS
0.35
VCE(sat) = 150°C
IC/IB = 10
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.25
0.2
25°C
0.15
−55°C
0.1
0.05
−55°C
0.2
0.15
0.1
0.05
0
0.001
0.01
0.1
1.0
10
0.001
0.01
IC, COLLECTOR CURRENT (A)
1.0
10
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
150°C (5.0 V)
IC/IB = 10
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
800
750
700
650 150°C (2.0 V)
600
550
500 25°C (5.0 V)
450
400 25°C (2.0 V)
350
300 −55°C (5.0 V)
250
200 −55°C (2.0 V)
150
100
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.1
1.0
0.001
10
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
1.0
10 mA
VCE = −2.0 V
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
VBE(on), BASE EMITTER TURN−ON
VOLTAGE (V)
25°C
0.25
0
0.9
VCE(sat) = 150°C
IC/IB = 100
0.3
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
VCE (V) IC = 500 mA
0.8
100 mA
300 mA
0.6
0.4
0.2
0
0.1
0.001
0.01
0.1
1.0
10
0.01
IC, COLLECTOR CURRENT (A)
0.1
1.0
10
IB, BASE CURRENT (mA)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
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4
100
NSS40200L, NSV40200L
TYPICAL CHARACTERISTICS
300
Cobo, OUTPUT CAPACITANCE (pF)
100
Cibo (pF)
275
250
225
200
175
150
125
100
90
Cobo (pF)
80
70
60
50
40
30
20
0
1.0
2.0
3.0
5.0
4.0
6.0
0
10
5.0
15
20
25
30
VEB, EMITTER BASE VOLTAGE (V)
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
100 ms
10 ms
1s
1 ms
1.0
IC (A)
Cibo, INPUT CAPACITANCE (pF)
325
0.1
Thermal Limit
0.01
0.01
0.1
1.0
10
VCE (Vdc)
Figure 9. Safe Operating Area
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5
100
35
NSS40200L, NSV40200L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
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NSS40200L/D