NTS2101P D

NTS2101P
Power MOSFET
−8.0 V, −1.4 A, Single P−Channel, SC−70
Features
•
•
•
•
Leading Trench Technology for Low RDS(on) Extending Battery Life
−1.8 V Rated for Low Voltage Gate Drive
SC−70 Surface Mount for Small Footprint (2 x 2 mm)
Pb−Free Package is Available
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V(BR)DSS
RDS(on) Typ
65 mW @ −4.5 V
−8.0 V
Applications
ID Max
−1.4 A
78 mW @ −2.5 V
• High Side Load Switch
• Charging Circuit
• Single Cell Battery Applications such as Cell Phones,
117 mW @ −1.8 V
P−Channel MOSFET
S
Digital Cameras, PDAs, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Units
Drain−to−Source Voltage
Parameter
VDSS
−8.0
V
Gate−to−Source Voltage
VGS
±8.0
V
ID
−1.4
A
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 70°C
−1.1
t≤5s
TA = 25°C
−1.5
A
Steady
State
TA = 25°C
0.29
W
0.33
W
−3.0
A
PD
tp = 10 ms
D
IDM
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode), Continuous
IS
−0.46
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
MARKING DIAGRAM &
PIN ASSIGNMENT
3
t≤5s
Pulsed Drain Current
G
Drain
3
TS M G
G
1
2
SC−70/SOT−323
CASE 419
STYLE 8
TS
M
G
THERMAL RESISTANCE RATINGS
2
1
Gate
Source
= Device Code
= Date Code*
= Pb−Free Package
Parameter
Symbol
Max
Units
(Note: Microdot may be in either location)
Junction−to−Ambient – Steady State (Note 1)
RqJA
430
°C/W
Junction−to−Ambient − t ≤ 5 s (Note 1)
RqJA
375
*Date Code orientation may vary depending
upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
Package
Shipping †
NTS2101PT1
SOT−323
3000/Tape & Reel
NTS2101PT1G
SOT−323
(Pb−Free)
3000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
1
Publication Order Number:
NTS2101P/D
NTS2101P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−8.0
−20
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
−10
mV/°C
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = −6.4 V
TJ = 25°C
−1.0
TJ = 70°C
−5.0
IGSS
VDS = 0 V, VGS = ±8.0 V
VGS(TH)
VGS = VDS, ID = −250 mA
Gate−to−Source Leakage Current
±100
mA
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
−0.45
−0.7
V
2.6
mV/°C
VGS = −4.5 V, ID = −1.0 A
65
100
VGS = −2.5 V, ID = −0.5 A
78
140
VGS = −1.8 V, ID = −0.3 A
117
210
VGS = 0 V, f = 1.0 MHz,
VDS = −8.0 V
640
mW
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
pF
120
82
VGS = −5.0 V, VDD = −5.0 V,
ID = −1.0 A
nC
6.4
0.7
Gate−to−Source Charge
QGS
1.0
Gate−to−Drain Charge
QGD
1.5
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
VGS = −4.5 V, VDD = −4.0 V,
ID = −1.0 A, RG = 6.2 W
ns
6.2
15
td(OFF)
26
tf
18
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = −0.3 A
TJ = 25°C
−0.62
TJ = 125°C
−0.51
Reverse Recovery Time
tRR
Charge Time
Ta
Discharge Time
Tb
15.7
QRR
9.5
Reverse Recovery Charge
VGS = 0 V, dISD/dt = 100 A/ms,
IS = −1.0 A
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
23.4
−1.2
V
ns
7.7
nC
NTS2101P
TYPICAL ELECTRICAL CHARACTERISTICS
8.0 V w −10 V
DS
−ID, DRAIN CURRENT (AMPS)
−2.0 V
6.0
VGS = −2.5 V to −4.5 V
−1.8 V
4.0
−1.6 V
2.0
−1.4 V
−1.2 V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 25°C
−2.2 V
0
1.0
2.0
−1.0 V
6.0
4.0
2.0
TJ = 125°C
3.0
4.0
0
0.4
0.8
1.2
1.6
2.0
2.4
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.16
VGS = −4.5 V
0.12
TJ = 125°C
0.08
TJ = 25°C
TJ = −55°C
0.04
0
0
2.0
4.0
6.0
8.0
2.8
0.16
VGS = −2.5 V
TJ = 125°C
0.12
TJ = 25°C
0.08
TJ = −55°C
0.04
0
0
2.0
−ID, DRAIN CURRENT (AMPS)
4.0
6.0
8.0
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current
and Temperature
1000
1.5
TJ = 25°C
VGS = 0 V
ID = −1.0 A
VGS = −4.5 V
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 25°C
TJ = −55°C
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
8.0
1.3
1.1
0.9
800
CISS
600
400
COSS
200
CRSS
0.7
−50
−25
0
25
50
75
100
125
150
0
0
TJ, JUNCTION TEMPERATURE (°C)
2
4
6
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
8
NTS2101P
4.0
5
QT
−IS, SOURCE CURRENT (AMPS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
4
3
2
1
0
QGS
QGD
VDS = −5.0 A
ID = −1.0 A
TA = 25°C
VGS = 0 V
3.0
2.0
TJ = 125°C
1.0
TJ = 25°C
0
0
2.0
4.0
6.0
QG, TOTAL GATE CHARGE (nC)
8.0
0
0.2
0.4
0.6
0.8
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 8. Diode Forward Voltage vs. Current
Figure 7. Gate−to−Source and Drain−to−Source
Voltage vs. Total Gate Charge
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4
1.0
NTS2101P
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE M
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
E
HE
1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
2
b
e
A
0.05 (0.002)
c
A2
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
L
A1
MIN
0.80
0.00
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTS2101P/D