NTS4101P Power MOSFET −20 V, −1.37 A, Single P−Channel, SC−70 Features • • • • Leading −20 V Trench for Low RDS(on) −2.5 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2x2 mm) Pb−Free Package is Available http://onsemi.com V(BR)DSS RDS(on) Typ ID Max 83 mW @ −4.5 V −20 V Applications −1.37 A 88 mW @ −3.6 V • High Side Load Switch • Charging Circuit • Single Cell Battery Applications such as: Cell Phones, 104 mW @ −2.5 V P−Channel MOSFET S Digital Cameras, PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Units Drain−to−Source Voltage Parameter VDSS −20 V Gate−to−Source Voltage VGS ±8 V ID −1.37 A Continuous Drain Current (Note 1) Steady State TA = 25°C Power Dissipation (Note 1) Steady State TA = 25°C TA = 70°C D −0.62 PD 0.329 W IDM −4.0 A TJ, TSTG −55 to 150 °C Source Current (Body Diode), Continuous IS −0.5 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature G MARKING DIAGRAM & PIN ASSIGNMENT 3 D 3 1 TT M G G 2 SC−70/SOT−323 CASE 419 STYLE 8 2 1 G S THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction−to−Ambient – Steady State (Note 1) RqJA 380 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). TT M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† NTS4101PT1 SOT−323 3000/Tape & Reel NTS4101PT1G SOT−323 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 206 March, 2006 − Rev. 2 1 Publication Order Number: NTS4101P/D NTS4101P ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated) Symbol Test Condition Min Typ Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 −24.5 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ −13.7 mV/°C Parameter Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = −16 V TJ = 25°C −1.0 TJ = 70°C −5.0 IGSS VDS = 0 V, VGS = ±8 V VGS(TH) VGS = VDS, ID = −250 mA mA ±100 nA −1.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) −0.45 −0.64 2.7 mV/°C VGS = −4.5 V, ID = −1.0 A 83 120 VGS = −3.6 V, ID = −0.7 A 88 130 VGS = −2.5 V, ID = −0.3 A 104 160 VGS = 0 V, f = 1.0 MHz, VDS = −20 V 603 840 90 125 62 85 6.4 9.0 nC 6.2 12 ns 14.9 25 td(OFF) 26 40 tf 18 30 TJ = 25°C −0.61 −1.2 V TJ = 125°C −0.5 20 ns mW CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = −4.5 V, VDS = −4.5 V, ID = −1.0 A Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 1.0 Gate−to−Drain Charge QGD 1.5 pF 0.7 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = −4.5 V, VDD = −4.0 V, ID = −1.0 A, RG = 6.2 W DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Ta Discharge Time Reverse Recovery Charge VGS = 0 V, IS = −0.3 A VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A 10.9 7.1 Tb 3.8 QRR 4.25 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 nC NTS4101P TYPICAL CHARACTERISTICS 6 6 4 −1.8 V −2.2 V 3 −1.6 V 2 −1.4 V 1 −1.2 V 0 VDS w −10 V TJ = 25°C −ID, DRAIN CURRENT (A) VGS = −4.5 V −3.5 V −3.0 V −2.5 V 5 −ID, DRAIN CURRENT (A) −2.0 V 5 4 3 2 TJ = 125°C 1 −1.0 V 0 2 4 6 0 8 TJ = −55°C 0 0.4 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.16 VGS = −4.5 V TJ = 125°C TJ = 25°C 0.08 TJ = −55°C 0.04 0 0 1 2 3 4 1.2 1.6 2.0 2.4 Figure 2. Transfer Characteristics 5 6 0.16 VGS = −3.6 V TJ = 125°C 0.12 TJ = 25°C 0.08 TJ = −55°C 0.04 0 0 1 2 4 3 6 5 −ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Drain Current and Temperature Figure 4. On−Resistance versus Drain Current and Temperature 1.5 1000 ID = −1.0 A VGS = −4.5 V 1.3 C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0.12 0.8 −VGS, GATE−TO−SOURCE VOLTAGE (V) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C 1.1 0.9 0.7 −50 TJ = 25°C VGS = 0 V 800 CISS 600 400 COSS 200 CRSS −25 0 25 50 75 100 125 150 0 0 TJ, JUNCTION TEMPERATURE (°C) 4 8 12 16 −DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 20 NTS4101P 5 3 QT VGS = 0 V 4 −IS, SOURCE CURRENT (A) −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS VGS 3 2 Q1 Q2 1 0 ID = −1.0 A TJ = 25°C 0 2 4 1 TJ = 125°C TJ = 25°C 0 8 6 2 0 Qg, TOTAL GATE CHARGE (nC) 0.2 0.4 0.6 0.8 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 7. Gate−to−Source and Drain−to−Source Voltage versus Total Charge Figure 8. Diode Forward Voltage versus Current http://onsemi.com 4 1 NTS4101P PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE M D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 DIM A A1 A2 b c D E e e1 L HE 2 b e A 0.05 (0.002) c A2 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN L A1 MIN 0.80 0.00 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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