Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC451LC3 v06.0514 LINEAR & POWER AMPLIFIERS - SMT GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Typical Applications Features The HMC451LC3 is ideal for use as a medium power amplifier for: Gain: 19 dB • Microwave Radio & VSAT Output IP3: +30 dBm • Military & Space Single Supply: +5V @ 114 mA • Test Equipment & Sensors 50 Ohm Matched Input/Output • Fiber Optics RoHS Compliant 3 x 3 mm SMT package Saturated Power: +21 dBm @ 21% PAE • LO Driver for HMC Mixers Functional Diagram General Description The HMC451LC3 is an efficient GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless RoHS compliant SMT package. Operating between 5 and 20 GHz, the amplifier provides 19 dB of gain, +21 dBm of saturated power and 21% PAE from a single +5V supply. This 50 Ohm matched amplifier does not require any external components and the RF I/O’s are DC blocked, making it an ideal linear gain block or driver for HMC SMT mixers. The HMC451LC3 allows the use of surface mount manufacturing techniques. Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +5V Parameter Min. Frequency Range Gain 16 Gain Variation Over Temperature Max. Min. 19 0.015 Typ. Max. Min. 15 - 18 15 0.025 18 0.015 Typ. Max. 18 - 20 14 0.025 GHz 17 0.015 Units dB 0.025 dB/ °C Input Return Loss 13 13 12 dB Output Return Loss 12 8 8 dB 19.5 dBm 20.5 21 dBm dBm Output Power for 1 dB Compression (P1dB) 16.5 19.5 16 19 16.5 Saturated Output Power (Psat) 21 Output Third Order Intercept (IP3) 32 29 29 Noise Figure 7 6.5 7 dB 114 114 114 mA Supply Current (Idd) 1 Typ. 5 -15 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC451LC3 v06.0514 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 20 10 16 S21 S11 S22 5 GAIN (dB) RESPONSE (dB) 15 0 +25C +85C -40C 12 8 -5 -10 4 -15 0 -20 3 5 7 9 11 13 15 17 19 21 23 4 25 6 8 Input Return Loss vs. Temperature 14 16 18 20 22 Output Return Loss vs. Temperature 0 0 +25C +85C -40C -5 RETURN LOSS (dB) RETURN LOSS (dB) 12 FREQUENCY (GHz) FREQUENCY (GHz) -10 -15 -20 +25C +85C -40C -5 -10 -15 -20 4 6 8 10 12 14 16 18 20 22 4 6 8 FREQUENCY (GHz) 10 12 14 16 18 20 22 18 20 22 FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 28 28 24 24 20 20 Psat (dBm) P1dB (dBm) 10 LINEAR & POWER AMPLIFIERS - SMT 24 25 16 12 +25C +85C -40C 8 16 +25C +85C -40C 12 8 4 4 0 0 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC451LC3 v06.0514 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Power Compression @ 20 GHz Power Compression @ 10 GHz Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 24 20 16 Pout (dBm) Gain (dB) PAE (%) 12 8 4 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 20 16 Pout (dBm) Gain (dB) PAE (%) 12 8 4 0 -20 -18 -16 -14 -12 -10 -8 6 INPUT POWER (dBm) -4 -2 0 2 4 6 Noise Figure vs. Temperature 40 11 10 36 NOISE FIGURE (dB) 9 32 28 24 +25C +85C -40C 20 8 7 6 5 4 3 +25C +85C -40C 2 1 16 0 4 6 8 10 12 14 16 18 20 22 4 6 8 FREQUENCY (GHz) 21 -10 ISOLATION (dB) GAIN (dB), P1dB (dBm), Psat (dBm) 0 20 19 Gain P1dB Psat 17 16 4.5 12 14 16 18 20 22 20 22 Reverse Isolation vs. Temperature 22 18 10 FREQUENCY (GHz) Gain, P1dB & PSAT vs. Supply Voltage @ 11 GHz +25C +85C -40C -20 -30 -40 -50 -60 5 Vdd (Volts) 3 -6 INPUT POWER (dBm) Output IP3 vs. Temperature IP3 (dBm) LINEAR & POWER AMPLIFIERS - SMT 24 5.5 4 6 8 10 12 14 16 18 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC451LC3 v06.0514 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Typical Supply Current vs. Vdd1 = Vdd2 Drain Bias Voltage (Vdd1 = Vdd2) +5.5 Vdc Vdd1 = Vdd2 (V) Idd1 = Idd2 (mA) RF Input Power (RFIN)(Vdd = +5Vdc) +10 dBm +4.5 111 Channel Temperature 175 °C +5.0 114 Continuous Pdiss (T = 85 °C) (derate 12.4 mW/°C above 85 °C) 1.1 W +5.5 116 Thermal Resistance (channel to ground paddle) 80 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing LINEAR & POWER AMPLIFIERS - SMT Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish HMC451LC3 Alumina, White Gold over Nickel MSL Rating MSL3 [1] Package Marking [2] H451 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC451LC3 v06.0514 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz LINEAR & POWER AMPLIFIERS - SMT Pin Descriptions 5 Pin Number Function Description 1, 2, 4 - 9, 11, 12, 14, 15 N/C This pin may be connected to RF/DC ground. Performance will not be affected. 3 RFIN This pin is AC coupled and matched to 50 Ohms from 5 - 20 GHz. 10 RFOUT This pin is AC coupled and matched to 50 Ohms from 5 - 20 GHz. 13 Vdd2 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1,000 pF and 2.2 µF are required. 16 Vdd1 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1,000 pF and 2.2 µF are required. GND Package bottom must be connected to RF/DC ground. Interface Schematic Application Circuit Component Value C1, C2 100 pF C3, C4 1,000 pF C5, C6 2.2 µF For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC451LC3 v06.0514 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz LINEAR & POWER AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 111667 Item Description J1 - J2 PCB Mount SMA Connector J3 - J5 DC Pin C1, C2 100 pF Capacitor, 0402 Pkg. C3, C4 1000 pF Capacitor, 0603 Pkg. C5, C6 2.2 µF Capacitor, Tantalum U1 HMC451LC3 Amplifier PCB [2] 111665 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6