Si8465DB Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.104 at VGS = - 4.5 V - 3.8 0.148 at VGS = - 2.5 V - 3.2 Qg (Typ.) 6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switches, Battery Switches and Charger Switches in Portable Device Applications • DC/DC Converters MICRO FOOT Bump Side View Backside View S G 1 D S 3 4 XXX 2 8 465 S G Device Marking: 8465 xxx = Date/Lot Traceability Code D P-Channel MOSFET Ordering Information: Si8465DB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 TA = 70 °C TA = 25 °C ID Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C IS TA = 70 °C TA = 25 °C PD Package Reflow Conditionsc A - 15 - 1.5a - 0.65b 1.1a 0.78b W 0.5b TA = 70 °C Operating Junction and Storage Temperature Range - 2.5b 1.8a TA = 25 °C Maximum Power Dissipation - 3a - 2.0b TA = 70 °C Pulsed Drain Current V - 3.8a TA = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg - 55 to 150 VPR 260 IR/Convection 260 °C Notes: a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TA = 25 °C. Document Number: 65363 S09-1922-Rev. A, 28-Sep-09 www.vishay.com 1 Si8465DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta, b t = 10 s Maximum Junction-to-Ambientc, d t = 10 s RthJA Typical Maximum 55 70 125 160 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board with full copper. b. Maximum under steady state conditions is 100 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper. d. Maximum under steady state conditions is 190 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea mV/°C 2.8 - 0.6 - 1.5 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 70 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V RDS(on) Forward Transconductancea V - 12 gfs - 10 µA A VGS = - 4.5 V, ID = - 1.5 A 0.086 0.104 VGS = - 2.5 V, ID = - 1.5 A 0.122 0.148 VDS = - 10 V, ID = - 1.5 A 7 VDS = - 10 V, VGS = 0 V, f = 1 MHz 125 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time tr 12 18 6 9 VDS = - 10 V, VGS = - 4.5 V, ID = 1 A 0.85 VGS = - 0.1 V, f = 1 MHz 7.5 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 20 30 20 30 40 10 15 td(on) 7 15 10 15 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω tr td(off) Fall Time nC 2.2 tf Rise Time Turn-Off Delay Time VDS = - 10 V, VGS = - 10 V, ID = - 1 A 25 td(off) Fall Time Turn-On Delay Time pF 95 td(on) Rise Time Turn-Off Delay Time 450 tf 25 40 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TA = 25 °C - 1.5 A - 15 IS = - 1 A, VGS = 0 V IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C - 0.8 - 1.2 V 20 40 ns 10 20 nC 10 10 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65363 S09-1922-Rev. A, 28-Sep-09 Si8465DB Vishay Siliconix 15 5 12 4 ID - Drain Current (A) ID - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS = 5 V thru 3 V 9 VGS = 2.5 V 6 3 2 TC = 25 °C VGS = 2 V 3 TC = 125 °C 1 TC = - 55 °C VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 800 0.25 600 0.20 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 2.5 V 0.15 400 Coss 200 0.10 Crss VGS = 4.5 V 0 0.05 0 3 6 9 12 0 15 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 10 1.20 ID = 1 A 1.15 ID = 1.5 A VGS = 4.5 V 8 VGS = 2.5 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 VDS = 10 V 6 VDS = 5 V VDS = 16 V 4 1.10 1.05 1.00 0.95 2 0.90 0 0 4 8 12 0.85 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 65363 S09-1922-Rev. A, 28-Sep-09 150 www.vishay.com 3 Si8465DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.25 100 ID = 1.5 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.20 10 TJ = 150 °C TJ = 25 °C 1 0.15 TJ = 125 °C 0.10 TJ = 25 °C 0.05 0.00 0.1 0.0 0.3 0.6 0.9 1.2 0 1.5 1 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 25 1.3 1.2 2 ID = 250 µA 20 Power (W) V GS(th) (V) 1.1 1.0 0.9 15 10 0.8 5 0.7 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms,1s 0.1 10 s, DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65363 S09-1922-Rev. A, 28-Sep-09 Si8465DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 1.5 1.2 Power Dissipation (W) ID - Drain Current (A) 3 2 1 0.9 0.6 0.3 0 0.0 0 25 50 75 100 TA - Ambient Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating Note: When Mounted on 1" x 1" FR4 with Full Copper. * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65363 S09-1922-Rev. A, 28-Sep-09 www.vishay.com 5 Si8465DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Full Copper) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 190 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Minimum Copper) www.vishay.com 6 Document Number: 65363 S09-1922-Rev. A, 28-Sep-09 Si8465DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP (2 x 2, 0.5 mm PITCH) 3 1 4 A1 A2 e 2 A 4 x Ø 0.24 to 0.26 Note 4 Solder Mask ~ Ø 0.25 Bump Note 2 Recommended Land S S D G e 8465 s XXX D 4xØb s Mark on Backside of Die e D Notes (Unless otherwise specified): 1. All dimensions are in millimeters. 2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter ∅ 0.30 mm to 0.32 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. 4. Non-solder mask defined copper landing pad. 5. • is location of pin 1. Dim. Millimetersa Inches Min. Nom. Max. Min. Nom. Max. A 0.462 0.505 0.548 0.0181 0.0198 0.0215 A1 0.220 0.250 0.280 0.0086 0.0098 0.0110 A2 0.242 0.255 0.268 0.0095 0.0100 0.0105 b 0.300 0.310 0.320 0.0118 0.0122 0.0126 e 0.500 0.0197 s 0.230 0.250 0.270 0.0090 0.0098 0.0106 D 0.920 0.960 1.000 0.0362 0.0378 0.0394 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65363. Document Number: 65363 S09-1922-Rev. A, 28-Sep-09 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1