DTC144TCA(SOT 23)

WILLAS
FM120-M+
DTC144TCA THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SOT-23
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
Pb-Free• Guardring
package for
is overvoltage
available protection.
switching.
• Ultra high-speed
RoHS product
for packing
code suffix ”G”
Silicon epitaxial planar chip, metal silicon junction.
•
Halogen free product for packing code suffix “H”
parts
environmental
standards of
• Lead-free
Epoxy meets
UL 94
V-0meet
flammability
rating
MIL-STD-19500 /228
Moisure Sensitivity
Level
1
product for packing code suffix "G"
• RoHS
Built-in bias
resistors enable the configuration of an inverter circuit
Halogen free product for packing code suffix "H"
without connecting external input resistors (see equivalent circuit)
Mechanical data
The bias resistors consist of thin-film resistors with complete
Epoxy
flame
isolation•to
allow: UL94-V0
negativerated
biasing
ofretardant
the input. They also have the
advantage
of
almost
completely
eliminating
parasitic effects
• Case : Molded plastic, SOD-123H
,
Only the• on/off
conditions
need
to
be
set
for
operation, making
Terminals :Plated terminals, solderable per MIL-STD-750
device design easy
0.146(3.7)
0.130(3.3)
x
x
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Parameter
Symbol
Dimensions in inches and (millimeters)
Value
• Weight : Approximated 0.011 gram
Collector-Base Voltage
VCBO
50
Collector-Emitter Voltage
VCEO
50
MAXIMUM RATINGS AND ELECTRICAL
Emitter-Base voltage
VEBO
5
at 25℃ ambient temperature Iunless
otherwise
specified.
CollectorRatings
Current-Continuous
100
C
Single
phase
half
wave,
60Hz,
resistive
of
inductive
load.
Collector Dissipation
P
200
C
capacitive load, derate current by 20%
For
Junction
Temperature
TJ
Storage Temperature Range
Marking Code
RATINGS
TSTG
Maximum
Recurrent Peak Reverse Voltage
Electrical
Characteristics
150
Unit
V
V
CHARACTERISTICS
V
mA
.110(2.80)
Absolute Maximum
Position : Any
• MountingRatings
0.040(1.0)
0.024(0.6)
.080(2.04)
.070(1.78)
.083(2.10)
•
•
x
0.071(1.8)
0.056(1.4)
.006(0.15)MIN.
•
0.012(0.3) Typ.
.122(3.10)
.106(2.70)
.063(1.60)
.047(1.20)
Features
mW
.008(0.20)
к
.003(0.08)
FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
к
-55~150
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
VRRM
35
42
56
70
105
140
Maximum RMS Voltage
.004(0.10)MAX.
Parameter
Min VRMS
Typ 14
Max 21
Unit 28
Collector-Base
Breakdown
Voltage
Maximum DC Blocking Voltage
20--30 V
40
50
60
80
100
150
200
50 VDC--V(BR)CBO
(IC=50uA, IE=0)
Maximum
Average
Forward
Rectified
Current
I
O
1.0
Collector-Emitter Breakdown Voltage
50
----V
V(BR)CEO
.020(0.50)
(IC=1mA, IB=0)
Peak Forward
Surge Current
8.3 ms
single half sine-wave
.012(0.30)
Emitter-Base
Breakdown
Voltage
FSM
30
I
5
----V
V(BR)EBO
(IE=50uA,
C=0) load (JEDEC method)
superimposed
on Irated
Collector Cut-off Current
uA
40 in inches and (millimeters)
--- RΘJA--0.5
ICBO Typical Thermal Resistance (Note 2)
Dimensions
(VCB=50V, IE=0)
120
Typical
Junction
Capacitance
(Note
1)
C
J
Emitter Cut-off Current
IEBO
----0.5 -55 touA
+125
-55 to +150
(VEB=4V,
IC=0) Range
Operating
Temperature
TJ
DC
Current
Gain
65
to
+175
Storage
Temperature
Range
TSTG
100
300
600
--hFE
(VCE=5V, IC=1mA)
Collector-Emitter Saturation Voltage
Suggested Solder
----0.3
V
VCE(sat)
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
(IC=5mA, IB=0.5mA)
Pad Layout
K¡0.50
R1 Maximum
InputForward
resistance
32.9
61.1
0.9
Voltage at 1.0A DC
0.92
VF 47
0.70
0.85
.031
Transition Frequency
.8000.5
250
--MHz
fT Maximum Average Reverse Current at @T A=25℃--IR
(VCE=10V, IE=-5mA, f=100MHz)
10
@T A=125℃
Rated DC Blocking Voltage
.055(1.40)
.035(0.89)
Sym
*Marking:
06
NOTES:
.035
.900
.079
2.000
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
inches
mm
2- Thermal Resistance From Junction to Ambient
.037
.950
2012-06
2012-0
.037
.950
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC144TCA THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
Typical Characteristics
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board
Staticspace.
Characteristic
• Low power loss, high efficiency.
COMMON
drop.
• High current capability, low forward voltage
EMITTER
10uA
T =25℃
• High surge capability.
9uA
protection.
• Guardring for overvoltage
8uA
• Ultra high-speed switching.
• Silicon epitaxial planar chip,7uAmetal silicon junction.
standards of
• Lead-free parts meet environmental
6uA
5
hFE
1000
——
IC
0.146(3.7)
0.130(3.3)
Ta=100℃
IC
COLLECTOR CURRENT
3
•
2
MIL-STD-19500 /228
5uA
RoHS product for packing code suffix "G"
Halogen free product for packing code4uA
suffix "H"
Mechanical data
1
hFE
Ta=25℃
DC CURRENT GAIN
(mA)
a
4
0.071(1.8)
0.056(1.4)
100
3uA
0.040(1.0)
0.024(0.6)
2uA
• Epoxy : UL94-V0 rated flame retardant
I =1uA
• Case : Molded plastic, SOD-123H
,
2
4
6
8
• Terminals
:Plated terminals,
solderable
per MIL-STD-750
COLLECTOR-EMITTER VOLTAGE V
(V)
COMMON EMITTER
VCE= 5V
B
0
0
• Polarity : Indicated by cathode band
VCEsat ——
IC
: Any
• Mounting Position
• Weight : Approximated 0.011 gram
IC
100
(mA)
——
VBE
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
VDC
β=10
20
Ta=25℃
Rectified
10
Current
COLLECTOR CURREMT
IC
(mA)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated loadC
(JEDEC
——method)
V
ob
10
Typical Thermal Resistance (Note 2)
CB
(pF)
C
C
@T A=125℃
T =2
5℃
a
1
10
100
115
150
120
200
56
70
105
140
150
200
COMMON EMITTER
=5V
V
80
100
CE
1.0
30
—— Ta
PD
10
100
40
120
-55 to +150
- 65 to +175
DTC144TCA
0.70
IR
0.9
0.85
0.92
0.5
10
100
50
0
20
30
V
0.50
150
2- Thermal
Resistance From Junction to Ambient
0.1
2012-06
0.1
0.1
250
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
REVERSE VOLTAGE
60
300
NOTES:
10
42
50
-55 to +125
VF
Maximum Average Reverse Current at @T A=25℃
0
35
40
18
80
200
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
1
Maximum
Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
28
30
TSTG
ob
CHARACTERISTICS
16
60
21
Ta=25 ℃
TJ
Storage Temperature Range
15
50
350
IE=0CJ
Operating Temperature Range
14
40
BASE-EMMITER VOLTAGE VBE (V)
RΘJA
f=1MHz
Typical Junction Capacitance (Note 1)
CAPACITANCE
IO
IFSM
100
131
30
POWER DISSIPATION
PD (mW)
Average
IC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Ta=100 ℃
1
Forward
10
T =1
00℃
a
RATINGS
100
2012-0
IC
100
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
10
0.1
Maximum
COLLECTOR CURRENT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum DC Blocking Voltage
10
(mA)
1000
Marking Code
0.031(0.8) Typ.
1
Dimensions in inches and (millimeters)
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
3000
0.031(0.8) Typ.
10
0.1
CE
Method 2026
0.012(0.3) Typ.
(V)
40
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
150
(℃ )
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC144TCA THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2)forward voltage drop.
DTC144TCA –T
G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability.
• High
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information 12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating
Temperature Range
TJ
Marking Code
- 65 to +175
Storage
Temperature Range
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Rated of WILLAS. Customers using or selling WILLAS components for use in DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Maximum Forward Voltage at 1.0A DC
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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