2SC4617(SOT 523)

WILLAS
SOT-523
FM120-M+
2SC4617
THRU
FM1200-M+
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
SOT-523
SOD-123H
better reverse leakage current and thermal resistance.
TRANSISTOR
(NPN)mounted application in order to
• Low profile surface
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
FEATURES
• High surge capability.
z • Guardring
Low Cob:Cob=
2.0pF(Typ)
for overvoltage
protection.
Ultra
high-speed
switching.
•
z
Complement to 2SA1774
• Silicon epitaxial planar chip, metal silicon junction.
z • Lead-free
Moisture
Sensitivity
Level 1standards of
parts
meet environmental
0.146(3.7)
1. BASE
0.130(3.3)
0.012(0.3) Typ.
2. EMITTER
3. COLLECTOR
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
• Epoxy : UL94-V0 rated flame retardant
: Molded plastic, SOD-123H
• Case
Symbol
Parameter
,
•
Terminals
:Plated
terminals,
solderable
per
MIL-STD-750
Collector-Base Voltage
VCBO
VCEO
0.040(1.0)
0.024(0.6)
Method 2026
Collector-Emitter Voltage
• Polarity : Indicated by cathode band
Emitter-Base Voltage
VEBO
• Mounting Position : Any
Collector
Current
IC • Weight : Approximated
0.011
gram -Continuous
PC
TJ
Collector Power Dissipation
Junction Temperature
Ratings at 25℃ ambient temperature unless otherwise specified.
Storage
Temperature
Tstgphase half wave, 60Hz,
Single
resistive
of inductive load.
For capacitive load, derate current by 20%
12
Maximum RecurrentParameter
Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum
Average Forward breakdown
Rectified Current
Collector-emitter
voltage
IOV(BR)CEO
IFSM
V(BR)EBO
Peak Forward Surge Current 8.3 ms single half sine-wave
Emitter-base breakdown voltage
superimposed on rated load (JEDEC method)
Symbol20
V(BR)CBO
RΘJA
Typical Thermal Resistance (Note 2)
Collector cut-off current
ICBO
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ I
EBO
Emitter cut-off current
Storage Temperature Range
TSTG
DC current gain
CHARACTERISTICS
Maximum
Forward Voltage atsaturation
1.0A DC
Collector-emitter
voltage
Maximum Average Reverse Current at @T A=25℃
50
V
7
V
150
mA
150
mW
150
℃
-55-150
℃
RatedTransition
DC Blocking frequency
Voltage
VF V
14
15
16
60
18
80Min
10
Typ
100
115
Max
150
120
Unit
200
Volts
21
28
35
42
56
70
105
140
Volts
30
40
50
60
80
100
150
200
Volts
IC=50uA, IE=0
IE=50uA, IC=0
-55 to +125
CE(sat)
IC=50mA,0.50
IB=5mA
V
Amps
V
7
V
-55 to +150
VEB=7V, IC=0
VCE=6V, IC=1mA
50
40
120
VCB=60V, IE=0
hFE
60
1.0
30
IC=1mA, IB=0
- 65 to +175
120
0.70
0.1
μA
0.1
μA
Amps
℃/W
PF
℃
℃
560
fT
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Cob
0.9
0.4
0.85
0.5
IR
@T A=125℃
Collector output capacitance
13
Test
30 conditions
40
50
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
NOTES:
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Collector-base breakdown voltage
60
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
RATINGS
Unit
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Marking Code
Value
0.031(0.8) Typ.
VCE=12V, IC=2mA, f=100MHz
10
0.92
V
Volts
mAmps
180
MHz
VCB=12V, IE=0, f=1MHz
3.5
pF
2- Thermal
Resistance From Junction
Ambient
CLASSIFICATION
OFto h
FE
Rank
Range
Marking
2012-06
2013-12
Q
R
S
120-270
180-390
270-560
BQ
BR
BS
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC4617
THRU
FM1200-M+
SOT-523
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Typical Characteristics
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current
andVthermal resistance.
I ——
C
CE
profile surface mounted application in order to
• Low 200
COMMON EMITTER
optimize board space.
SOD-123H
hFE ——
1000
T =25 ℃
• Low power loss, high efficiency.
1/0.9/0.8mA
current capability, low forward voltage drop.
• High160
0.7mA
• High surge capability.
0.6mA
• Guardring for overvoltage protection.
0.5mA
high-speed switching.
• Ultra120
• Silicon epitaxial planar chip, metal silicon junction.0.4mA
• Lead-free parts meet environmental standards of
(mA)
Ta=100 ℃
Ta=25 ℃
hFE
DC CURRENT GAIN
0.3mA
0.2mA
Mechanical
data
40
0.012(0.3) Typ.
300
IC
COLLECTOR CURRENT
•
COMMON EMITTER
VCE=6V
0.146(3.7)
0.130(3.3)
a
MIL-STD-19500 /228
80
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
IC
0.071(1.8)
0.056(1.4)
100
30
0.040(1.0)
0.024(0.6)
IB=0.1mA
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
0
• Terminals
:Plated
terminals,
solderable
per
MIL-STD-750
0
4
8
12
16
20
24
COLLECTOR-EMITTER
VOLTAGE
Method
2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
VCEsat ——
• Weight
: Approximated 0.011
gram
1000
VCE
0.031(0.8) Typ.
10
0.1
0.3
(V)
0.031(0.8) Typ.
3
1
10
COLLECTOR CURREMT
100
30
IC
200
(mA)
Dimensions in inches and (millimeters)
Ic
IC
100
——
VBE
VCE=6V
COMMON EMITTER
I /I =10
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
C B
Marking Code
RATINGS
Maximum Recurrent Peak Reverse Voltage
Ta=100 ℃
Maximum RMS Voltage
Maximum DC Blocking Voltage
30
Ta=25 ℃
VRMS
14
21
VDC
20
30
superimposed on 10
rated load (JEDEC method)
1
10
3
100
30
——
200
IR
@T A=125℃
IE=0 / IC=0
C
CAPACITANCE
10
Cob
3
2013-12
1
0.1
0.3
1
10
115
Ta=25 ℃
100
150
120
200
Volts
42
56
70
105
140
Volts
60
80
100
150
200
Volts
0.2
Amps
Amps
0.4
0.6
40
BASE-EMMITER
VOLTAGE
120
0.8
VBE
1.0
℃/W
(V)
PF
-55 to +150
- 65 to +175
Pc ——
0.50
o
Ta=25 C
COLLECTOR POWER DISSIPATION
Pc (mW)
VF
2- Thermal Resistance From Junction to Ambient
2012-06
18
80
1.0
30
0.1
0.0
Ta=100 ℃
℃
℃
Ta
f=1MHz FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH
ib
1- Measured at 1 MHZ and applied reverseCvoltage
of 4.0 VDC.
50
-55 to +125
(pF)
NOTES:
35
200
Maximum Average Reverse Current at @T A=25℃
16
60
TSTG
Maximum Forward Voltage at 1.0A DC
30
Rated DC Blocking
Voltage
40
VCB/VEB
CHARACTERISTICS
1
15
50
TJ
Operating Temperature Range
Cob/Cib
28
3
0.3
Typical Thermal Resistance (NoteCOLLECTOR
2)
ΘJA
CURRENT Ic R(mA)
Typical Junction Capacitance (Note 1)
CJ
100
14
40
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
(mA)
13
30
Maximum Average Forward Rectified Current
Storage Temperature Range
IC
VRRM
12
20
0.3
10
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
100
0.1
30
COLLCETOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
Ratings at 25℃ ambient temperature unless otherwise specified.
300 wave, 60Hz, resistive of inductive load.
Single phase half
For capacitive load, derate current by 20%
10
3
REVERSE VOLTAGE
V
30
(V)
100
0.70
0.9
0.85
0.5
150
0.92
Volts
mAmps
10
100
50
0
0
25
75
100
125
150
WILLAS
ELECTRONIC
CORP.
50
AMBIENT TEMPERATURE
Ta
(℃ )
WILLAS ELECTRONIC CORP.
WILLAS
SOT-523
FM120-M+
2SC4617
THRU
FM1200-M+
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-523
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
.004(0.10)MIN.
• RoHS product for packing code suffix "G"
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.067(1.70)
.059(1.50)
.035(0.90)
.028(0.70)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
.069(1.75)
.057(1.45)
Halogen free product for packing code suffix "H"
Mechanical data
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
Marking Code
.043(1.10)
VRRM
VRMS
.035(0.90)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating Temperature Range
.004(0.10)MAX.
Storage Temperature Range
CHARACTERISTICS
50
18
80
115
150
120
200
Volts
14
21
28
35
42
56
70
105
140
20
30
40
50
60
80
100
150
200
Volts
IO
IFSM
TJ
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
VF
Maximum Average Reverse Current at @T A=25℃
40
.008(0.20)
10
.004(0.10)
100
16
60
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
13
30
Volts
CJ
Typical Junction Capacitance (Note 1)
Rated DC Blocking Voltage
12
20
RΘJA
Typical Thermal Resistance (Note 2)
.014(0.35)
.010(0.25)
14
15
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
@T A=125℃
IR
.014(0.35)
NOTES:
.006(0.15)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.50
.035(0.90)
.028(0.70)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2013-12
Rev.D
WILLAS ELECTRONIC
CORP.
WILLAS ELECTRONIC CORP.
WILLAS
SOT-523
FM120-M+
2SC4617
THRU
FM1200-M+
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
Pb Free Product
Package outline
SOD-123H
0.146(3.7)
Information:
power loss, high
efficiency.
• LowOrdering
0.130(3.3)
0.012(0.3) Typ.
low forward voltage drop.
• High current capability,
Device PN Packing • High surge capability.
(3) (1) (2)
‐T G ‐WS Tape&Reel: 3 Kpcs/Reel overvoltage protection.
• Guardring for2SC4617 x
0.071(1.8)
high-speed
switching.
• UltraNote: (1)
Packing code, Tape & Reel Packing 0.056(1.4)
• Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free (2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” MIL-STD-19500 /228
product
(3) for
CLASSIFICATION OF h
FE RANK packing code suffix "G"
• RoHS
Halogen free product for packing code suffix "H"
Mechanical data
: UL94-V0 rated flame retardant
• Epoxy
: Molded plastic, SOD-123H
• Case
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer***
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Ratings at 25℃ ambient
temperature unless otherwise specified.
WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive load,
derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
12
13
14
15
16
18
10
115
120
for any errors or inaccuracies. Data sheet specifications and its information 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
VRRM
contained are intended to provide a product description only. "Typical" parameters Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Volts
Maximum DC Blocking
Voltage
20
30
40
50
60
80
100
150
200
VDC
which may be included on WILLAS data sheets and/ or specifications can Amps
Maximum Average Forward Rectified Current
IO
1.0
and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Amps
WILLAS does not assume any liability arising out of the application or superimposed on rated load (JEDEC method)
℃/W
use of any product or circuit. 40
Typical Thermal Resistance
(Note 2)
RΘJA
PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating Temperature Range
TJ
℃
WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175
Storage Temperature
Range
TSTG
℃
Marking Code
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Volts
0.9
Maximum Forwardapplications where a failure or malfunction of component or circuitry may directly Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAmps
or indirectly cause injury or threaten a life without expressed written approval 10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ
and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance
From Junction to Ambient
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2012-06
WILLAS ELECTRONIC CORP.
2013-12
WILLAS ELECTRONIC CORP.
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