FM3L45 AHS(SMAF)

WILLAS
FM120-M+
THRU
FM3L45-AHS
FM1200-M+
3.0A Surface Mount Schottky Barrier Rectifiers - 45V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
RECTIFIERS
-20V- 200V
SMAF
Package
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Features
• Low profile surface mounted application in order to
Package outline
SMAF
low profile
- typical
height of 1.0 mm
• Very optimize
board
space.
for automated
• Ideal
power loss,placement
high efficiency.
• Low
losses,capability,
high efficiency
• Low• power
High current
low forward voltage drop.
voltage
drop
• Low• forward
High surge
capability.
partsfor
meet
environmental
standards of
• Lead-free
overvoltage
protection.
• Guardring
MIL-STD-19500
/228 switching.
• Ultra high-speed
Color
band denotes
end silicon junction.
• Polarity:
epitaxial
planar cathode
chip, metal
• Silicon
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.116(2.95)
.088(2.25)
.044(1.10)
.035(0.90)
.181(4.60)
.155(3.95)
MIL-STD-19500 /228
•
•
•
.069(1.75)
.045(1.15)
0.012(0.3)
Typ.
0.071(1.8)
0.056(1.4)
.220(5.60)
.189(4.80)
for packing code suffix "G"
• RoHS product data
Mechanical
•
•
•
SOD-123H
Halogen free product for packing code suffix "H"
Epoxy:UL94-V0 rated flame retardant
Mechanical data
Case : Molded plastic,SMAF
• Epoxy : UL94-V0 rated flame retardant
Terminals : Solder plated, solderable per
• Case : Molded plastic, SOD-123H
MIL-STD-750, Method 2026
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Polarity : Indicated by cathode band
Method 2026
Mounting Position : Any
• Polarity : Indicated by cathode band
Weight : Approximated 0.037 gram
• Mounting Position : Any
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.059(1.50)
Dimensions.029(0.75)
in inches and (millimeters)
Dimensions in inches and (millimeters)
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum ratings (AT T A=25 oC unless otherwise noted)
Ratings at 25℃ ambient temperature unless otherwise specified.
Unit
Symbol
FM3L45-AHS
Single Parameter
phase half wave, 60Hz, resistive of inductive load.
For Repetitive
capacitive load,
current
by 20%
V RRM
45
peakderate
reverse
voltage
V
V RMS
31.5
RMS voltage
SYMBOL FM120-MH FM130-MH FM140-MH
RATINGS
45 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Continuous reverse
voltage
VR
Marking Code
12
13
14
15
16
18
10
115
120
3.0
I
A
Forward rectified current(Fig.1)
20 O 30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Vol
VRRM
Non-Repetitive
Peak
Forward
Surge
Current
8.3ms
Vol
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
I FSM
A
80
Single Half Sine-Wave Superimposed on Rated Load
Vol
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
O
Operating junction and storage temperature range
-55 to +150
T J, T STG
C
Am
Maximum Average Forward Rectified Current
IO
1.0
IFSM
superimposed
on rated load
(JEDEC method)
Electrical
Characteristics
(AT T A =25 oC unless otherwise noted)
Typical Thermal Resistance (Note 2)
RΘJA
Symbol MIN. TYP. MAX.
Parameter
Test Conditions
Typical Junction Capacitance (Note 1)
CJ
V B-55 to +125
45
I R=0.5mA
Reverse
breakdown
voltage
Operating
Temperature
Range
TJ
Peak Forward Surge Current 8.3 ms single half sine-wave
Storage Temperature Range
TSTG
30
40
Unit
120
V
Am
℃/W
PF
-55 to +150
℃
- 65 to +175
℃
I F=1.5A,T J=25°C
0.36
I F=3.0A,T J=25°C
0.42
0.50
VF
Forward voltage
V FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
CHARACTERISTICS I F =1.5A,T J =125°C
- FM160-MH
0.30FM150-MH
SYMBOL FM120-MH FM130-MH FM140-MH
0.38
0.46
I F=3.0A,T J=125°C
Vol
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
VA=25℃
Maximum Average Reverse Current at @T
R =45V,T J =25°C
Reverse current
Rated DC Blocking Voltage
IR
VA=125℃
R =45V,T J =125°C
@T
0.45
25
IR
0.5
mA
10
mAm
NOTES:
Thermal Characteristics
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal
Resistance From Junction to Ambient
Parameter
Typical thermal resistance junction to case(Note1)
Symbol
R θJC
FM3L45-AHS
35
Unit
°C/W
Note 1: Mounted on FR-4 PCB
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
FM3L45-AHS
FM1200-M+
3.0A Surface Mount Schottky Barrier Rectifiers - 45V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
RECTIFIERS
SMAF
Package -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Rating and characteristic
curvesoutline
Package
Features
3.0
2.5
2.0
1.5
1.0
0.5
0
better reverse leakage current and thermal resistance.
Fig.1-TYPICAL FORWARD CURRENT DERATING CURVE
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0
20
40
60
80
100
Mechanical
data
120
140
160
180
Fig.2-TYPICAL
FORWARD
SOD-123H
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT,(A)
AVERAGE FORWARD CURRENT,(A)
• Batch process design, excellent power dissipation offers
200
LEAD
TEMPERATURE,(°C)
rated
flame retardant
• Epoxy : UL94-V0
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
100
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
10
TJ = 125 °C
0.071(1.8)
0.056(1.4)
1
TJ = 25 °C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.040(1.0)
0.024(0.6)
FORWARD VOLTAGE,(V)
0.031(0.8) Typ.
0.031(0.8) Typ.
100
80
Dimensions in inches and (millimeters)
REVERSE LEAKAGE CURRENT, (mA)
PEAK FORWAARD SURGE CURRENT,(A)
Method 2026
• Polarity : Indicated by cathode band
Fig.3-MAXIMUM NON-REPETITIVE FORWARD
: Any CURRENT
• Mounting PositionSURGE
• Weight : Approximated 0.011 gram
Fig.4 - TYPICAL REVERSE
CHARACTERISTICS
100
10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
60
8.3ms Single Half
Single phase half wave, 60Hz, resistive
ofCinductive load.
T =25
Sine Wave
For capacitive load, derate current by 20%
J
40
JEDEC method
RATINGS
0.1
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking
Code
20
Maximum Recurrent Peak Reverse Voltage
Maximum
RMS Voltage
0
1 DC Blocking Voltage5
Maximum
TJ = 125 °C
1
10
VRRM
12
20
13
30
VRMS
14
21
VDC 50
20100
30
Maximum Average Forward
Rectified
NUMBER
OFCurrent
CYCLES AT 60Hz IO
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
15
50
28
0.001
4010
16
60
35
20
5030
18
42
56
60 50
40
10
100
TJ = 25 °C
80
60
115
150
70
8070
80
100
90
100
120
200
V
105
140
V
150
200
V
1.0 REVERSE VOLTAGE,(%)
PERCENT OF RATED PEAK
30
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
14
40
0.01
40
120
-55 to +125
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
V
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
3.0A Surface Mount Schottky Barrier Rectifiers - 45V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
SMAF
RECTIFIERS
Package -20V- 200V
THRU
FM3L45-AHS
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Pinning information
Package outline
Features
process design, excellent power dissipation
offers outline
• Batch Pin
Simplified
Symbol
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize
board space.
Pin1
cathode
• Low power loss, high efficiency.
1
Pin2
anode
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
Reel packing
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
PACKAGE
MIL-STD-19500 /228
REEL SIZE
REEL
COMPONENT
SPACING
code suffix "G"
• RoHS product for packing
(pcs)
(m/m)
SMAF
4.0
2
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
CARTON
(pcs)
30,000
183*170*183
178
382*356*387
240,000
10.0
160,000
0.040(1.0)
9.9
0.024(0.6)
13"
4.0
10,000flame retardant
20,000 337*337*37
rated
• Epoxy : UL94-V0
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Marking
1 0.130(3.3)
BOX
(pcs)
Halogen free product for packing code suffix "H"
7"
3,000
Mechanical
data
0.146(3.7)
2
330
350*330*360
APPROX.
GROSS WEIGHT
(kg)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Type
number
Position : Any
• Mounting
• Weight : Approximated 0.011 gram
FM3L45-AHS-TH
Dimensions in inches and (millimeters)
Marking code
3L45
AND ELECTRICAL CHARACTERISTICS
Note: -AHS:MAXIMUM
PackageRATINGS
code, SMAF
Ratings -T:
at 25℃
ambientReel
temperature unless otherwise specified.
Taping
Single phase half wave, 60Hz, resistive of inductive load.
Pb-Free package is available
For capacitive load, derate current by 20%
RoHS product
for packing code
suffix
”G” FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL
FM120-MH
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Halogen free product for packing code12suffix13“H”
VRRM
20
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Suggested
solder
pad
layout
Maximum
Average Forward
Rectified
Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
1.0
30
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
C
40
120
-55 to +125
℃
-55 to +150
- 65 to +175
TSTG
A
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.50
0.70
IR
@T A=125℃
0.85
0.9
0.92
0.5
B
10
V
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
PACKAGE
SMAF
2012-06
2012-1
A
B
C
0.060 (1.52)
0.048 (1.20)
0.123 (3.12)
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
3.0A Surface Mount Schottky Barrier Rectifiers - 45V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
RECTIFIERS
SMAF
Package -20V- 200V
THRU
FM3L45-AHS
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
Packing
information
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal
resistance.
P0
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
E
F
P1
d
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
B
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
W
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
P
A
Mechanical
data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
D2
D1
T
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.C
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
W1
D
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
Maximum RMS Voltage
VRMS
14
21
28
15
50
unit:mm
35
16
60
18
80
10
100
115
150
120
200
42
56
70
105
140
20
30
40
50
60
80
100
150
200
VDC
Symbol
SMAF
Item
Tolerance
Maximum Average Forward Rectified Current
IO
1.0
Peak Forward Surge
Current
8.3 ms single half sine-wave A
3.00
Carrier
width
0.1
30
IFSM
superimposed on rated
loadlength
(JEDEC method)
Carrier
5.50
B
0.1
40
Carrier depth
CRΘJA
0.1
Typical Thermal Resistance
(Note 2)
1.20
120
1.50
Sprocket hole
d CJ
0.1
Typical Junction Capacitance
(Note 1)
-55 to +150
13" Reel
outside diameter
D TJ
2.0 -55 to +125 330.00
Operating Temperature
Range
50.00
13" Reel
DTSTG
1
min
- 65 to +175
Storage Temperature
Rangeinner diameter
178.00
7" Reel outside diameter
D
2.0
62.00
7"CHARACTERISTICS
Reel inner diameter
D1
min FM130-MH FM140-MH
FM120-MH
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL
holeatdiameter
D 2VF
0.5
0.9
Maximum ForwardFeed
Voltage
1.0A DC
0.92
0.50 13.00
0.70
0.85
1.75
Sprocket hole position
E
0.1
0.5
Maximum Average Reverse Current at @T A=25℃
5.50
Punch hole position
F IR
0.1
10
@T A=125℃
Rated DC Blocking Voltage
4.00
Punch hole pitch
P
0.1
4.00
Sprocket hole pitch
P0
0.1
NOTES:
2.00
Embossment
P1
0.1
1- Measured at 1 MHZ
and applied center
reverse voltage of 4.0 VDC.
0.25
Overall tape thickness
T
0.1
2- Thermal Resistance From Junction to Ambient
12.00
Tape width
W
0.3
Reel width
11.40
W1
1.0
Maximum DC Blocking Voltage
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.