SR2040C SR20200C(TO 220)

WILLAS
FM120-M+
SR2040C
THRU
THRU
20.0A SCHOTTKY BARRIER RECTIFIERS -40V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
-20V- 200V
TO-220RECTIFIERS
PACKAGE
FM1200-M+
SR20200C
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse
leakage current and thermal resistance.
Mechanical
Date
SOD-123H
TO-220
• Low profile surface mounted application in order to
optimize board space.
‧Case:TO-220
• Low power loss, high efficiency.
‧Case
Material:
Molded Plastic, UL Flammability
capability, low forward voltage drop.
• High current
High surge capability.
•Classification
Rating 94V-0
• Guardring for overvoltage protection.
‧Terminals: Matte Tin Finish annealed over copper
• Ultra high-speed switching.
frame.
Solderable
MIL-STD-202
Silicon
epitaxial
planar chip,per
metal
silicon junction.
•Lead
parts grams
meet environmental
standards of
• Lead-free
‧Weight:
1.948
(approximate)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.153(3.9) .187(4.82)
.146(3.7) .148(3.8)
.413(10.5)
.374(9.5)
.129(3.3)
.1(2.54)
.270(6.9)
.230(5.8)
.053(1.4)
.043(1.1)
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.624(15.87)
Halogen free product for packing code suffix "H"
.578(14.7)
Mechanical data
Features
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
Molded
SOD-123H
• Case :Ring
‧Guard
forplastic,
over voltage
Protection
,
•
Terminals
:Plated
terminals,
solderable
per MIL-STD-750
‧High forward surge capability
.177(4.50)
.140(3.56)
0.031(0.8) Typ.
.057(1.45)
.046(1.16)
0.031(0.8) Typ.
.583(14.8)
Method 2026
.039(1.00)
‧High frequency operation
.499(12.7)
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
.023(0.60)
‧Component in accordance to RoHS 2002/95/EC
.028(0.7)
• Mounting Position : Any
.014(0.36)
‧ Pb-Free package is available
• Weight : Approximated 0.011 gram
.102(2.6)
RoHS product for packing code suffix ”G”
.126
.091(2.3)
(3.20)
MAXIMUM
RATINGS
ANDcode
ELECTRICAL
Halogen
free product
for packing
suffix “H” CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
MAXIMUM
(TA=25°C unless otherwise
noted) 21
14
Maximum RMSRATINGS
Voltage
VRMS
28
35
42
56
70
105
140
Volts
50
60
80
100
150
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
PARAMETER
Maximum Average Forward Rectified Current
Maximum repetitive peak reverse voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
Maximum RMS voltage
superimposed on rated load (JEDEC method)
Maximum DC blocking voltage
Typical Thermal Resistance (Note 2)
Typical Junction
Capacitance
1)
Maximum
average
forward(Note
rectified
current
(Total)
Operating Temperature Range
(Per
Leg)
Storage
Temperature Range
Peak forward surge current, 8.3ms single half
CHARACTERISTICS
sine-wave superimposed on rated load
Maximum Forward Voltage at 1.0A DC
Maximum
Instantaneous
Forward
Maximum Average
Reverse Current
at Voltage
@T A=25℃
IF=10A
25°C Voltage
@T A=125℃
Rated
DC@
Blocking
VRRM
20
30
VDC
SYMBOL
SR2040C
60
28
42
V
40
60
RMS
RΘJADC
CJ
TJ IF
SR20100C
SR20150C
1.0
100
30 70
40100
120
-55 to +125
20
Volts
200
SR20200C UNIT
Amps
150
200
105
140
VAmps
150
200
V℃/W
V
PF
-55 to +150
A℃
- 6510
to +175
TSTG
℃
IFSM FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
150.0 FM180-MH FM1100-MH FM1150-MH FM1200-MH AUNIT
SYMBOL
VF
0.50
I R VF
IR
Typical
Capacitance(NOTE1)
2ThermalJunction
Resistance
From Junction to Ambient
Cj
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Storage Temperature Range
SR2060C
40
Maximum DC Reverse Current @ Tc=25°C
at Rated DC Blocking Voltage @ Tc=100°C
Operating Temperature Range
40
IO
VRRM
IFSM
V
NOTES:
Typical Thermal Resistance
12
20
0.70
0.55
0.75
0.85
TJ
TSTG
0.2
5
400
RθJC
0.92
10
0.5
20
600
0.9
0.85
0.5
3
Volts
V
mAmps
pF
°C/W
-55 to +150
-55 to +150
mA
300
-55 to +125
0.92
°C
°C
NOTES:1.Measured at 1.0MHZ and applied reverse voltage of 4.0V DC
2012-06
2012-08
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.
WILLAS
FM120-M+
SR2040C
THRUTHRU
20.0A SCHOTTKY BARRIER RECTIFIERS -40V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
TO-220RECTIFIERS
PACKAGE-20V- 200V
FM1200-M+
SR20200C
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
FIG. 1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG. 2-TYPICAL FORWARD CHARACTERISTICS
optimize board space.
Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
15• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
10
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
100.00
INSTANTANEOUS FORWARD CURRENT (A)
AVERAGE FO
ORWARD CURRENT,(A)
20•
Mechanical
data
SR2040C~SR20100C
5
rated flame retardant
• Epoxy : UL94-V0
SR20150C~SR20200C
• Case : Molded plastic, SOD-123H
0
,
20
40
60
80 100 120 140 160 180 200
• 0Terminals
:Plated
terminals,
solderable per MIL-STD-750
10.00
0.071(1.8)
0.056(1.4)
1.00
0.10
SR200C
0.040(1.0)
SR2060C
0.024(0.6)
SR20100C
SR20150C~SR20200C
0.031(0.8) Typ.
0.031(0.8) Typ.
0.01
0.2
0.4
Method
2026
AMBIENT
TEMPERATURE(℃)
100
100
RATINGS
12
20
13
30
14
40
VRRM
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum 0Average Forward Rectified Current
1
10
IO
100
IFSM
CYCLES AT 60Hz
superimposed on rated loadNUMBER
(JEDEC OF
method)
25℃
100℃
℃
SR2040C
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
M i
Maxi
SR2060C
SR20100C
16
60
18
80
10
100
115
150
120
200
Volts
35
42
56
70
105
140
Volts
50
60
80
100
150
200
Volts
0.001
1.0
60
80
100
40
30
PERCENTAGE RATED PEAK REVERSE VOLTAGE (%)
Amps
0.0001
20
40
120
-55 to +125
TJ
2000
Storage Temperature Range
15
0.01
50
CJ
Typical
Junction Capacitance
(Note 1)
FIG. 5-TYPICAL
JUNCTION CAPACITANCE
Operating Temperature Range
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
S 201 0C S 20200C
SR20150C~SR20200C
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
Rated 1000
DC Blocking Voltage
1
RΘJA
Typical Thermal Resistance (Note 2)
1500
10
0 1 FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.1
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
UNIT
Maximum Recurrent Peak Reverse Voltage
50
Maximum RMS Voltage
JUNCTION CAPACITANCE (pF)
REVERSE LEAKAGE CURRENT (mA)
PEAK FORWARD SUR
RGE CURRENT (A)
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Peak Forward Surge Current 8.3 ms single half sine-wave
0.8
Dimensions in inches and (millimeters)
TJ=25℃ 8.3ms Single
Ratings150
at 25℃ ambient temperature
unless otherwise specified.
Half Sine Wave
methodof inductive load.
Single phase half wave, 60Hz,JEDEC
resistive
For capacitive load, derate current by 20%
Marking Code
0.6
FORWARD VOLTAGE (V)
• Polarity : Indicated by cathode band
• Mounting Position : Any
FIG. 3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
•200Weight : Approximated 0.011 gram
0.012(0.3) Typ.
TJ=25℃ PULSE
WIDTH 300us 2%
DUTY CYCLE
0.70
0.85
0.5
IR
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
500
2- Thermal Resistance From Junction to Ambient
0
0
1
10
100
REVERSE VOLTAGE (V)
2012-06
2012-08
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.