DAN202U(SOT 323)

WILLAS
FM120-M+
THRU
DAN202U
FM1200-M+
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
SWITCHING
DIODE
better reverse
leakage current and thermal resistance.
Low
profile
surface
mounted application in order to
•
FEATURES:
z
z
z
z
z
z
Pb Free Product
SOD-123H
SOT-323
optimize board space.
Four
packaging
are available
powerof
loss,
high efficiency.
• Lowtypes
High
current
capability,
low
forward voltage drop.
•
High speed
• High surge capability.
Suitable
for for
high
packing density layout
overvoltage protection.
• Guardring
High
reliability
high-speed switching.
• Ultra
Silicon epitaxial planar chip, metal silicon junction.
•
Pb-Free package is available
• Lead-free parts meet environmental standards of
RoHS
product for/228
packing code suffix ”G”
MIL-STD-19500
RoHS product for packing code suffix "G"
•
Halogen free product for packing code suffix “H”
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
3
Halogen free product for packing code suffix "H"
2
Moisture
Sensitivity
Mechanical
dataLevel 1
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
MARKING:N
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Maximum Ratings
and RATINGS
ElectricalAND
Characteristics,
Diode @Ta=25 ℃
MAXIMUM
ELECTRICAL Single
CHARACTERISTICS
Ratings at 25℃ Parameter
ambient temperature unless otherwise
specified.
Symbol
Single phase half wave, 60Hz, resistive of inductive load.
Peak reverse voltage
VRM
For capacitive load, derate current by 20%
DC reverse voltage
RATINGS
Unit
80
V
VR FM120-MH FM130-MH FM140-MH FM150-MH
80
V
FM160-MH FM180-MH FM1100-MH FM1150-MH
SYMBOL
FM1200-MH UNI
Marking
Code (peak) forward current
Maximum
Maximum Recurrent Peak Reverse Voltage
12
20
13
30
14
40
15
300
VRRM
50
18
80
10
100
Maximum RMS Voltage
VRMS
14
21
28
100
16
60
35
42
56
70
mA105
20
30
40
200
50
60
80
100
mW
150
Average forward current
Power dissipation
Maximum
DC Blocking Voltage
Limit
IFM
IO
D
VP
DC
Maximum
Average
Forward Rectified Current
Junction
temperature
Peak
Forward Surge Current
8.3 ms single half sine-wave
Operating/Storage
temperature
superimposed on rated load (JEDEC method)
IT
Oj
stg
FSM
IT
1.0
30
150
-55~+150
Typical Thermal Resistance
(Note 2)
RΘJA unless otherwise
ELECTRICAL
CHARACTERISTICS
(Ta=25℃
specified)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Parameter
Storage Temperature Range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Reverse voltage leakage current
V(BR)
Forward voltage
VF
@T A=125℃
IR
IR
Test
conditions
Min
- 65 to +175
IR= 100μA
200
Volts
Amp
Amp
℃/W
PF
-55 to +150
Max
80
℃
Unit
℃
V
0.50
VR=70V
0.70
0.85
0.5
0.1
0.9
μA
V
Diode capacitance
CD
VR=6V, f=1MHz
3.5
pF
Reverse recovery time
trr
VR=6V, IF=5mA
4
ns
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.92
Volt
mAm
1.2
2012-1
Volts
℃
IF=100mA
2012-06
Volts
140
℃
VF
2- Thermal Resistance From Junction to Ambient
120
200
10
NOTES:
-55 to +125
150
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Symbol
TSTG
Reverse breakdown voltage
40
120
mA115
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DAN202UTHRU
FM1200-M+
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
Forward Characteristics
switching.
•100Ultra high-speed
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
Typical Characteristics
0.146(3.7)
0.130(3.3)
(nA)
Mechanical data
T=
a 2
5℃
• Epoxy : UL94-V0 rated flame retardant
3
• Case : Molded plastic, SOD-123H
,
• Terminals
:Plated terminals, solderable per MIL-STD-750
1
Method 2026
• Polarity : Indicated by cathode band
0.3
• Mounting Position : Any
• 0.1Weight : Approximated 0.011 gram
0.2
0.4
0.6
REVERSE CURRENT IR
Halogen free product for packing code suffix "H"
10
T=
a 1
00
℃
(mA)
IF
• RoHS product for packing code suffix "G"
0.0
Ta=100℃
0.040(1.0)
0.024(0.6)
30
0.031(0.8) Typ.
Ta=25℃
Dimensions in inches and (millimeters)
3
0.8
1.0
1
1.2
0
20
40
60
REVERSE VOLTAGE
VR
80
(V)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
Power Derating Curve
Capacitance Characteristics
Marking Code
1.6
13
30
Maximum RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
Maximum Average Forward Rectified Current
IO
IFSM
superimposed on rated load (JEDEC method)
1.2
Storage Temperature Range
TSTG
CHARACTERISTICS
Maximum1.0
Forward Voltage at 1.0A DC
5
VF
10
REVERSE VOLTAGE
16
60
18
80
10
100
115
150
120
200
Vol
28
35
42
56
70
105
140
Vol
40
50
60
80
100
150
200
Vol
1.0
30
150
Am
Am
40
120
100
℃/
PF
-55 to +150
℃
- 65 to +175
50
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
15
50
-55 to +125
TJ
Operating Temperature Range
0
CJ
Typical Junction Capacitance (Note 1)
200
14
40
RΘJA
Typical Thermal Resistance (Note 2)
250
PD
1.4
POWER DISSIPATION
f=1MHz
(mW)
12
Ta=25℃ 20
VRRM
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Maximum Recurrent Peak Reverse Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
0.031(0.8) Typ.
10
F
0.071(1.8)
0.056(1.4)
100
FORWARD
VOLTAGE AND
V (V)ELECTRICAL CHARACTERISTICS
MAXIMUM
RATINGS
Characteristics
300
MIL-STD-19500 /228
30
FORWARD CURRENT
Reverse
1000
0.012(0.3) Typ.
VR
15
(V)
@T A=125℃
IR
20
0.50
0
0
0.70
25
50
0.9
0.85
0.5
75
AMBIENT TEMPERATURE
10
100
Ta
125
0.92
150
Vo
(℃ )
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DAN202UTHRU
FM1200-M+
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Outline Drawing
SOT-323
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
MIL-STD-19500 /228
Halogen free product for packing code suffix "H"
.087(2.20)
.054(1.35)
.045(1.15)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H .070(1.80)
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.004(0.10)MIN.
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.096(2.45)
.078(2.00)
Mechanical data
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
0.012(0.3) Typ.
.010(0.25)
18
10
.003(0.08)
80
100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
Maximum Average Forward Rectified Current
IO
IFSM
.056(1.40)
.047(1.20)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
.004(0.10)MAX.
TJ
Operating Temperature Range
Storage Temperature Range
13
30
14
40
15
50
16
60
115
150
120
200
Vol
70
105
140
Vol
100
150
200
Vol
1.0
30
40
120
-55 to +125
Am
Am
℃/
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
IR
.016(0.40)
.008(0.20)
@T A=125℃
0.50
.043(1.10)
.032(0.80)
VF
Maximum Forward Voltage at 1.0A DC
0.70
0.85
0.5
0.9
0.92
Vo
10
mAm
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-1
WILLAS ELECTRONIC
Rev.D CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
DAN202U
FM1200-M+
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Features
Package
outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
Device PN Packing 0.130(3.3)
low forward voltage drop.
• High current capability,
capability. (1)G(2)‐WS • High surge
DAN202U‐T Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1) Packing code, Tape&Reel Packing
• Ultra high-speed switching.
epitaxial planar chip, metal silicon junction.
• Silicon
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy
: UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient
temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
VRRM
contained are intended to provide a product description only. "Typical" parameters Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Volts
Maximum DC
Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Amp
and do vary in different applications and actual performance may vary over time. Maximum Average
Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward
Surge Current 8.3 ms single half sine-wave
30
IFSM
Amp
superimposed on rated load (JEDEC method)
use of any product or circuit. ℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
TJ
℃
WILLAS products are not designed, intended or authorized for use in medical, 65
to
+175
Storage Temperature Range
TSTG
℃
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
applications where a failure or malfunction of component or circuitry may directly Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAm
10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2- Thermal Resistance
From Junction to Ambient
Operating Temperature Range
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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