IPP072N10N3 G OptiMOS®3 Power-Transistor IPI072N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) V DS 100 V R DS(on),max 7.2 mΩ ID 80 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPI072N10N3 G IPP072N10N3 G Package PG-TO262-3 PG-TO220-3 Marking 072N10N 072N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 80 T C=100 °C 70 Unit A Pulsed drain current2) I D,pulse T C=25 °C 320 Avalanche energy, single pulse E AS I D=80 A, R GS=25 Ω 160 mJ Gate source voltage V GS ±20 V Power dissipation P tot 150 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) Rev. 2.1 55/175/56 J-STD20 and JESD22 See figure 3 page 1 2008-10-21 IPP072N10N3 G Parameter IPI072N10N3 G Values Symbol Conditions Unit min. typ. max. - - 1 minimal footprint - - 62 6 cm2 cooling area3) - - 40 100 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2 2.7 3.5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=80 A - 6.2 7.2 mΩ V GS=6 V, I D=40 A - 7.6 12.7 - 1.6 - Ω 50 99 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=80 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 2 2008-10-21 IPP072N10N3 G Parameter IPI072N10N3 G Values Symbol Conditions Unit min. typ. max. - 3690 4910 - 646 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 25 - Turn-on delay time t d(on) - 19 - Rise time tr - 37 - Turn-off delay time t d(off) - 37 - Fall time tf - 9 - Gate to source charge Q gs - 18 - Gate to drain charge Q gd - 10 - - 16 - V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=80 A, R G=3.6 Ω pF ns Gate Charge Characteristics 6) V DD=50 V, I D=80 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 51 68 Gate plateau voltage V plateau - 4.9 - Output charge Q oss - 68 91 nC - - 80 A - - 320 - 1 1.2 V - 73 - ns - 139 - nC V DD=50 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 6) Rev. 2.1 T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=50 V, I F=I S, di F/dt =100 A/µs See figure 16 for gate charge parameter definition page 3 2008-10-21 IPP072N10N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 175 IPI072N10N3 G 100 150 80 60 100 I D [A] P tot [W] 125 75 40 50 20 25 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 µs 10 µs 100 1 ms 10 0.5 Z thJC [K/W] 100 µs I D [A] 10 2 1 0.2 0.1 10 10 ms -1 0.05 0.02 0.01 single pulse 100 10 10-2 -1 10 0 10 1 10 2 10 3 V DS [V] Rev. 2.1 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2008-10-21 IPP072N10N3 G IPI072N10N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 400 10 V 18 320 7.5 V 15 R DS(on) [mΩ] I D [A] 240 6V 160 4.5 V 5V 12 9 6V 7.5 V 5.5 V 6 80 10 V 5V 3 4.5 V 0 0 0 0 1 2 3 4 5 0 50 V DS [V] 100 150 100 150 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 150 160 120 I D [A] g fs [S] 100 80 50 25 °C 40 175 °C 0 0 0 2 4 6 8 Rev. 2.1 0 50 I D [A] V GS [V] page 5 2008-10-21 IPP072N10N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=80 A; V GS=10 V V GS(th)=f(T j); V GS=V DS IPI072N10N3 G parameter: I D 16 4 14 3.5 12 3 10 2.5 V GS(th) [V] R DS(on) [mΩ] 900 µA 98 % 8 typ 90 µA 2 6 1.5 4 1 2 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss Coss 103 175 °C, 98% 25 °C 102 I F [A] C [pF] 175 °C 102 25 °C, 98% 101 Crss 101 100 0 20 40 60 80 V DS [V] Rev. 2.1 0 0.5 1 1.5 2 V SD [V] page 6 2008-10-21 IPP072N10N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=80 A pulsed parameter: T j(start) parameter: V DD 100 IPI072N10N3 G 10 8 25 °C 80 V 100 °C 50 V 6 20 V V GS [V] I AS [A] 150 °C 10 4 2 1 0 1 10 100 1000 0 20 40 60 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 110 V GS Qg V BR(DSS) [V] 105 100 V g s(th) 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.1 page 7 2008-10-21 IPP072N10N3 G IPI072N10N3 G PG-TO220-3: Outline Rev. 2.1 page 8 2008-10-21 IPP072N10N3 G IPI072N10N3 G PG-TO262-3 Rev. 2.1 page 9 2008-10-21 IPP072N10N3 G IPI072N10N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 10 2008-10-21