IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) V DS 120 V R DS(on),max (TO-263) 3.8 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPB038N12N3 G IPI041N12N3 G IPP041N12N3 G Package PG-TO263-3 PG-TO262-3 PG-TO220-3 Marking 038N12N 041N12N 041N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 120 T C=100 °C 120 Unit A Pulsed drain current3) I D,pulse T C=25 °C 480 Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω 900 mJ Gate source voltage 4) V GS ±20 V Power dissipation P tot 300 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 2.2 55/175/56 page 1 2009-07-16 IPI041N12N3 G IPP041N12N3 G Parameter IPB038N12N3 G Values Symbol Conditions Unit min. typ. max. - - 0.5 minimal footprint - - 62 6 cm2 cooling area5) - - 40 120 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=270 µA 2 3 4 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A - 3.5 4.1 mΩ V GS=10 V, I D=100 A, TO263 - 3.2 3.8 - 1.4 - Ω 83 165 - S Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=100 A J-STD20 and JESD22 2) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 182 A. 3) See figure 3 4) Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2009-07-16 IPI041N12N3 G IPP041N12N3 G Parameter IPB038N12N3 G Values Symbol Conditions Unit min. typ. max. - 10400 13800 pF - 1320 1760 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 61 - Turn-on delay time t d(on) - 35 - Rise time tr - 52.0 - Turn-off delay time t d(off) - 70 - Fall time tf - 21 - Gate to source charge Q gs - 52 - Gate to drain charge Q gd - 37 - Switching charge Q sw - 58 - Gate charge total Qg - 158 211 Gate plateau voltage V plateau - 5.0 - Output charge Q oss - 182 243 nC - - 120 A - - 480 - 0.9 1.2 - 123 - 356 V GS=0 V, V DS=60 V, f =1 MHz V DD=60 V, V GS=10 V, I D=100 A, R G=1.6 Ω ns Gate Charge Characteristics 6) V DD=60.1 V, I D=100 A, V GS=0 to 10 V V DD=60.1 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 6) Rev. 2.2 T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=60 V, I F=I S, di F/dt =100 A/µs V ns - nC See figure 16 for gate charge parameter definition page 3 2009-07-16 IPI041N12N3 G IPP041N12N3 G 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 350 140 300 120 250 100 200 80 I D [A] P tot [W] 1 Power dissipation IPB038N12N3 G 150 60 100 40 50 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 200 T C [°C] 100 limited by on-state resistance 1 µs 100 µs 0.5 10 µs 10 ms 102 1 ms 10-1 I D [A] 10 1 0.01 -2 single pulse 10-3 -1 10 0 10 1 10 2 10 3 V DS [V] Rev. 2.2 0.05 0.02 10 100 10 0.1 Z thJC [K/W] DC 0.2 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-07-16 IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 400 10 7V 4.5 V 9 10 V 320 6.5 V 8 6V I D [A] R DS(on) [mΩ] 240 5.5 V 160 7 5V 6 5.5 V 5 6V 4 80 10 V 5V 3 4.5 V 0 2 0 1 2 3 4 5 0 50 V DS [V] 100 150 100 150 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 300 200 250 160 200 g fs [S] I D [A] 120 150 80 100 175 °C 25 °C 40 50 0 0 0 2 4 6 8 Rev. 2.2 0 50 I D [A] V GS [V] page 5 2009-07-16 IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 10 4 3.5 8 2700 µA 270 µA 2.5 6 V GS(th) [V] R DS(on) [mΩ] 3 98 % typ 4 2 1.5 1 2 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 103 104 175 °C 102 Coss 25 °C, 98% 10 I F [A] C [pF] 175 °C, 98% 25 °C Ciss 3 Crss 101 102 101 100 0 20 40 60 80 100 V DS [V] Rev. 2.2 0 0.5 1 1.5 2 V SD [V] page 6 2009-07-16 IPI041N12N3 G IPP041N12N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD 1000 IPB038N12N3 G 10 96 V 8 60 V 24 V 100 25 °C V GS [V] I AS [A] 6 100 °C 4 150 °C 10 2 1 0 1 10 100 1000 0 50 100 150 200 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 140 V GS 135 Qg 130 V BR(DSS) [V] 125 120 V g s(th) 115 110 Q g(th) 105 Q sw Q gs 100 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.2 page 7 2009-07-16 IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G PG-TO220-3: Outline Rev. 2.2 page 8 2009-07-16 IPI041N12N3 G IPP041N12N3 G Rev. 2.2 page 9 IPB038N12N3 G 2009-07-16 IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G PG-TO-263 (D²-Pak) Rev. 2.2 page 10 2009-07-16 IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 11 2009-07-16