TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com 65 kW Transient Voltage Suppressor DEVICES - High Reliability controlled devices - Thru hole mounting - Unidirectional (A) and Bidirectional (CA) construction - Selections for 48 V to 75 V standoff voltages (VWM) MRT65KP48A thru MRT65KP75CA, e3 LEVELS M, MA, MX, MXL FEATURES High reliability controlled devices with wafer fabrication and assembly lot traceability 100 % surge tested devices Suppresses transients up to 65 kW @ 6.4/69 µs Fast response with less than 5ns turn-on time Preferred 65kW TVS for aircraft power bus protection Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options. Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B RoHS Compliant devices available by adding “e3” suffix 3σ lot norm screening performed on Standby Current ID CASE 5A APPLICATIONS / BENEFITS Pin injection protection per RTCA/DO-160F up to Level 5 for Waveform 4 (6.4/69 µs) and up o to Level 3 for Waveform 5A (40/120 s) at 70 C Compatible with “abnormal surge voltage (dc)” in 16.6.2.4 (Category A, B, and Z) of RTCA/DO-160F The MRT65KP48A is designed for Category A in protecting 80 V components** The MRT65KP54A or 60A is designed for Category B in protecting 90 V or 100 V components** The MRT65KP75A is designed for Category Z in protecting 125 V components** ** including switching transistors, MOSFETS & IGBTs in offline switching power supplies MAXIMUM RATINGS Peak Pulse Power dissipation at 25 °C: 65 kW at @ 6.4/69 µs per waveform in Figure 8 (derate per Figure 2) with impulse repetition rate (duty factor) of 0.01 % max Operating and Storage temperature: -55 °C to +150 °C Steady-state power dissipation: 7 W @ TL = 25 °C Temperature coefficient of voltage: +0.100 %/°C max Solder temperatures: 260 °C for 10 s (maximum) RF01015 Rev A, October 2010 High Reliability Product Group Page 1 of 5 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ MECHANICAL AND PACKAGING Void-free transfer molded thermosetting epoxy body meeting UL94V-0 requirements Tin-Lead (90 % Sn, 10 % Pb) or RoHS (100% Sn) Compliant annealed matte-Tin plating readily solderable per MILSTD-750, method 2026 Body marked with part number Cathode indicated by band. No cathode band on bi-directional devices Available in bulk or custom tape-and-reel packaging TAPE-AND-REEL standard per EIA-296 (add “TR” suffix to part number) Weight: 1.6 grams (approximate) PACKAGE DIMENSIONS NOTE: Cathode indicated by band All dimensions in inches millimeters Case 5A SYMBOLS & DEFINITIONS Symbol VWM PPP VBR ID Definition Symbol Working Peak (Standoff) Voltage Peak Pulse Power Breakdown Voltage Standby Current RF01015 Rev A, October 2010 IPP VC IBR Definition Peak Pulse Current Clamping Voltage Breakdown Current for VBR High Reliability Product Group Page 2 of 5 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ ELECTRICAL CHARACTERISTICS @ 25oC Working Standoff Voltage VWM Maximum Standby Current ID @ VWM Minimum Breakdown Voltage VBR @ IBR Breakdown Current IBR Maximum Clamping Voltage VC @ IPP (Note 1) Peak Pulse Current IPP @ 6.4/69 s (Note 2) V max A V mA V A MRT65KP48A 48 5 53.3 5 77.7 836 MRT65KP54A 54 5 60.0 5 87.5 742 MRT65KP60A 60 5 66.7 5 97.3 668 MRT65KP75A 75 5 83.3 5 122 533 MICROSEMI PART NUMBER (replace A suffix with CA for bidirectional) PPP Peak Pulse Power vs. Pulse Time – kW Non-Repetitive Pulse GRAPHS NOTE: This PPP versus time graph allows the designer to use these parts over a broad power spectrum using the guidelines illustrated in App Note 104 on Microsemi’s website. Aircraft transients are described with exponential decaying waveforms. For suppression of square-wave impulses, derate power and current to 66% of that for exponential decay as shown in Figure 1. Peak Pulse Power (PPP) or continuous Power in % of 25oC rating tp – Pulse Time – sec. FIGURE 1 Peak Pulse Power vs. Pulse Time To 50% of Exponentially Decaying Pulse TL Lead Temperature oC FIGURE 2 POWER DERATING RF01015 Rev A, October 2010 High Reliability Product Group Page 3 of 5 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ GRAPHS Contd. Correct FIGURE 3 FIGURE 4 t – time Note: frequency is 1MHz FIGURE 7 – Waveform 3 INSTALLATION TVS devices used across power lines are subject to relatively high magnitude surge currents and are more prone to adverse parasitic inductance effects in the mounting leads. Minimizing the shunt path of the lead inductance and their V= Ldi/dt effects will optimize the TVS effectiveness. Examples of optimum installation and poor installation are illustrated in figures 3 through figure 6. Figure 3 illustrates minimal parasitic inductance with attachment at end of device. Inductive voltage drop is across input leads. Virtually no “overshoot” voltage results as illustrated with figure 4. The loss of effectiveness in protection caused by excessive parasitic inductance is illustrated in figures 5 and 6. Also see MicroNote 111 for further information on “Parasitic Lead Inductance in TVS”. t – time FIGURE 8 – Waveform 4 Wrong FIGURE 5 FIGURE 6 t – Time FIGURE 9 – Waveform 5A NOTE: The 1MHz damped oscillatory waveform (3) has an effective pulse width of 4 s. Equivalent peak pulse power at each of the pulse widths represented in RTCA/DO-160E for waveforms 3, 4 and 5A (above) have been determined referencing Figure 1 herein as well as Application Notes 104 and 120 (found on Microsemi’s website) and are listed below. RF01015 Rev A, October 2010 High Reliability Product Group Page 4 of 5 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ GRAPHS Contd. WAVEFORM NUMBER PULSE WIDTH ( s) PEAK PULSE POWER (kW ) 3 4 290 4 6.4/69 65 5A 40/120 49 Note: High current fast rise-time transients of 250 ns or less can more than triple the V C from parasitic inductance effects (V= Ldi/dt) compared to the clamping voltage shown in the Electrical Characteristics as also described in Figures 5 and 6 herein. RF01015 Rev A, October 2010 High Reliability Product Group Page 5 of 5