Aeroflex 4M SRAM Industry Comparison 0.18µm CMOS Aeroflex 0.25µm Bulk CMOS 0.35µm CMOS SOI 0.25µm CMOS 0.18µm 0.25µm 0.35µm 0.25µm 66 MHz @ 15ns 512K x 8 15 ns (-55° to 125°C) 28MHz @ 30 ns 512K x 8 30ns(-550 to 1250C) 40 MHz @20ns 512K x 8 < 20 ns (-550 to 1250C) 66MHz @ 15ns 512 x 8 15ns (-550 to 1250C) 512K x 8 - 7 ns 512K x 8 - 2 ns 512K x 8 - 7 ns Dual Core-1.8V (1.7V - 1.9V) I/O - 3.0V (3.0V - 3.6V) 20ns 6ns 11ns Single 3.3V 15 ns 1 ns 5 ns Single 3.3V (3.0V - 3.6V) 7 ns 0 ns 7 ns Single 3.3V (3.0 – 3.6V) Core = 22 mW @ 1 MHz 23 mW @ 1 MHz typical 32.4 mW @ 1 MHz worst case 36 mW (max) @ 1MHz Feature Process Technology Operating Speed Organization Access Time Data Setup Data Hold tGLQV Power Supply Power Consumption Active I/O = 1 mW @ 1 MHz Total = 23 mW @ 1 MHz worst case Active Core = 57 mW @ 66 MHz I/O = 14mW @ 66 MHz Total = 71mW @ 66 MHz worst case 1.1W @ 28MHz worst case 936 mW @ 40 MHz worst case 680mW@66MHz worst case Standby Core = 20.9 mW I/O = 0.36 mW Total = 21 mW worst case 15 mW worst case 36 mW typical 7.2mW worst case Packages 36 Lead Ceramic Flat Pack 40 - Lead Flat Pack, 36 - Lead Flat Pack 36 – Lead Flat Pack Standard Microcircuit Drawing (SMD) QML Qualified 5962-03235 (512K x 8) 5962-07210 5962-06203 562-05205 Q and V Q and V Q and V Q and V 5 x 106 rad(Si) >120 MeV – cm2/Mg < 1x10-10 Upsets/Bit-Day > 3 x 105 rad(Si) > 1 x 106 rad(Si) (25ns ONLY) < 1x10-10 Upsets/Bit-Day > 3 x 105 rad(Si) Radiation Specifications Total Dose SEL SEU 3 x 105 rad(Si) > 100 MeV – cm2/Mg < 8x10-10 Upsets/Bit-Day Note: We also offer a 128K x 32 RadHard 4M SRAM — check with factory for specifications. < 1x10-9 Upsets/Bit-Day