4M SRAM Industry Comparison Chart (10/07)

Aeroflex 4M SRAM
Industry Comparison
0.18µm CMOS
Aeroflex
0.25µm Bulk CMOS
0.35µm CMOS SOI
0.25µm CMOS
0.18µm
0.25µm
0.35µm
0.25µm
66 MHz @ 15ns
512K x 8
15 ns (-55° to 125°C)
28MHz @ 30 ns
512K x 8
30ns(-550 to 1250C)
40 MHz @20ns
512K x 8
< 20 ns (-550 to 1250C)
66MHz @ 15ns
512 x 8
15ns (-550 to 1250C)
512K x 8 - 7 ns
512K x 8 - 2 ns
512K x 8 - 7 ns
Dual
Core-1.8V (1.7V - 1.9V)
I/O - 3.0V (3.0V - 3.6V)
20ns
6ns
11ns
Single
3.3V
15 ns
1 ns
5 ns
Single
3.3V (3.0V - 3.6V)
7 ns
0 ns
7 ns
Single
3.3V (3.0 – 3.6V)
Core = 22 mW @ 1 MHz
23 mW @ 1 MHz
typical
32.4 mW @ 1 MHz
worst case
36 mW (max) @ 1MHz
Feature
Process
Technology
Operating Speed
Organization
Access Time
Data Setup
Data Hold
tGLQV
Power Supply
Power Consumption
Active
I/O = 1 mW @ 1 MHz
Total = 23 mW @ 1 MHz
worst case
Active
Core = 57 mW @ 66 MHz
I/O = 14mW @ 66 MHz
Total = 71mW @ 66 MHz
worst case
1.1W @ 28MHz
worst case
936 mW @ 40 MHz
worst case
[email protected]
worst case
Standby
Core = 20.9 mW
I/O = 0.36 mW
Total = 21 mW worst case
15 mW worst case
36 mW typical
7.2mW worst case
Packages
36 Lead Ceramic
Flat Pack
40 - Lead Flat Pack,
36 - Lead Flat Pack
36 – Lead Flat Pack
Standard Microcircuit
Drawing (SMD)
QML Qualified
5962-03235 (512K x 8)
5962-07210
5962-06203
562-05205
Q and V
Q and V
Q and V
Q and V
5 x 106 rad(Si)
>120 MeV – cm2/Mg
< 1x10-10 Upsets/Bit-Day
> 3 x 105 rad(Si)
> 1 x 106 rad(Si) (25ns ONLY)
< 1x10-10 Upsets/Bit-Day
> 3 x 105 rad(Si)
Radiation Specifications
Total Dose
SEL
SEU
3 x 105 rad(Si)
> 100 MeV – cm2/Mg
< 8x10-10 Upsets/Bit-Day
Note: We also offer a 128K x 32 RadHard 4M SRAM — check with factory for specifications.
< 1x10-9 Upsets/Bit-Day
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