VS-ETU3006SHM3, VS-ETU3006-1HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt® FEATURES • Low forward voltage drop • Ultrafast recovery time • 175 °C operating junction temperature • Low leakage current TO-263AB (D2PAK) • AEC-Q101 qualified, meets JESD 201 class 1A whisker test TO-262AA Base cathode 2 • Meets MSL level 1, per LF maximum peak of 260 °C 2 J-STD-020, • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 N/C VS-ETU3006SHM3 DESCRIPTION 3 Anode 1 N/C 3 Anode 1 Ultralow VF, soft-switching ultrafast rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). VS-ETU3006-1HM3 The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY TO-263AB (D2PAK), TO-262AA Package IF(AV) 30 A VR 600 V VF at IF 1.15 V trr (typ.) 30 ns The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. APPLICATIONS TJ max. 175 °C Diode variation Single die AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units, and DVD AC/DC power supplies. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 113 °C 30 Non-repetitive peak surge current IFSM TC = 25 °C 200 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 30 A - 1.4 2.0 IF = 30 A, TJ = 150 °C - 1.15 1.35 VR = VR rated - 0.02 30 TJ = 150 °C, VR = VR rated - 30 250 IR = 100 μA UNITS V Forward voltage VF Reverse leakage current IR Junction capacitance CT VR = 600 V - 20 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH μA Revision: 10-Jul-15 Document Number: 94702 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU3006SHM3, VS-ETU3006-1HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 30 45 TJ = 25 °C - 45 - TJ = 125 °C - 100 - - 5.6 - - 10 - TJ = 25 °C - 127 - TJ = 125 °C - 580 - MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction to case RthJC - 0.95 1.4 °C/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 70 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2.0 - g - 0.07 - oz. 6 (5) - 12 (10) kgf · cm (lbf · in) Reverse recovery time trr Peak recovery current TJ = 25 °C IRRM Reverse recovery charge TEST CONDITIONS TJ = 125 °C Qrr IF = 30 A dIF/dt = 200 A/μs VR = 200 V UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS Weight Mounting torque Case style TO-263AB (D2PAK) ETU3006SH Case style TO-262 ETU3006-1H 1000 1000 100 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device TJ = 175 °C TJ = 150 °C 10 TJ = 25 °C 175°C 100 150°C 10 125°C 100°C 1 75°C 0.1 50°C 25°C 0.01 0.001 1 0.0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 10-Jul-15 Document Number: 94702 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU3006SHM3, VS-ETU3006-1HM3 www.vishay.com Vishay Semiconductors CT - Capacitance (pF) 1000 100 10 1 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance ZthJC (°C/W) ZthJC - Thermal Impedance (°C/W) 10 D = 0.5 D = 0.2 D = 0.1 1 D = 0.05 D = 0.02 D = 0.01 0.1 0.01 1E-05 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-0 1E+00 t1 - Rectangular Pulse Duration (s) 60 180 170 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics 160 150 140 130 DC 120 110 100 90 RMS Limit 50 40 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 30 20 10 0 0 5 10 15 20 25 30 35 40 45 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 0 5 10 15 20 25 30 35 40 45 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Revision: 10-Jul-15 Document Number: 94702 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU3006SHM3, VS-ETU3006-1HM3 www.vishay.com Vishay Semiconductors 130 1800 120 110 1600 100 1400 IF = 30 A, 125 °C 1200 80 trr (nC) trr (ns) 90 70 60 800 IF = 30 A, 25 °C 50 IF = 30 A, 125 °C 1000 600 40 400 30 20 IF = 30 A, 25 °C 200 typical value 10 100 typical value 0 100 1000 1000 dIFdt (A/μs) dIFdt (A/μs) Fig. 7 - Typical Reverse Recovery vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 10-Jul-15 Document Number: 94702 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU3006SHM3, VS-ETU3006-1HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E T U 30 06 S TRL H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - 3 - Circuit configuration E = single diode T = TO-220 4 - U = ultrafast recovery time 5 - Current code (30 = 30 A) 6 - Voltage code (06 = 600 V) 7 - • S = D2PAK - • -1 = TO-262 - • None = tube - • TRL = tape and reel (left oriented, for D2PAK package) - • TRR = tape and reel (right oriented, for D2PAK package) 9 - H = AEC-Q101 qualified 10 - Environmental digit: 8 -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-ETU3006SHM3 50 1000 Antistatic plastic tube VS-ETU3006-1HM3 50 1000 Antistatic plastic tube VS-ETU3006STRRHM3 800 800 13" diameter reel VS-ETU3006STRLHM3 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information TO-263AB (D2PAK) www.vishay.com/doc?95046 TO-262AA www.vishay.com/doc?95419 (D2PAK) www.vishay.com/doc?95444 TO-262AA www.vishay.com/doc?95443 (D2PAK) www.vishay.com/doc?95032 TO-263AB TO-263AB Revision: 10-Jul-15 Document Number: 94702 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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