VS-12EWH06FN-M3 Datasheet

VS-12EWH06FN-M3
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Vishay Semiconductors
Hyperfast Rectifier, 12 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr and soft
recovery
2, 4
• 175 °C maximum operating junction temperature
• For PFC CRM/CCM operation
1
N/C
• Low forward voltage drop
3
Anode
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
TO-252AA (D-PAK)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
DESCRIPTION / APPLICATIONS
Package
TO-252AA (D-PAK)
IF(AV)
12 A
VR
600 V
VF at IF
1.34 V
trr (typ.)
18 ns
TJ max.
175 °C
Diode variation
Single die
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 132 °C
12
Non-repetitive peak surge current
IFSM
TJ = 25 °C
110
Peak repetitive forward current
IFM
TC = 132 °C, f = 20 kHz, d = 50 %
24
Operating junction and storage temperatures
TJ, TStg
A
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
VBR,
VR
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 12 A
-
1.73
2.5
IF = 12 A, TJ = 125 °C
-
1.34
1.8
VR = VR rated
-
-
10
TJ = 125 °C, VR = VR rated
-
-
100
IR = 100 μA
UNITS
V
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
8
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
μA
Revision: 15-Jun-15
Document Number: 93254
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
-
18
22
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
-
22
-
TJ = 25 °C
-
26
-
TJ = 125 °C
-
47
-
-
3.5
-
-
5.4
-
TJ = 25 °C
-
48
-
TJ = 125 °C
-
137
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
RthJC
-
1.3
1.7
°C/W
Reverse recovery time
trr
Peak recovery current
TJ = 25 °C
IRRM
Reverse recovery charge
TJ = 125 °C
Qrr
IF = 12 A
dIF/dt = 200 A/μs
VR = 390 V
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
TEST CONDITIONS
Approximate weight
0.01
oz.
12EWH06FN
1000
100
10
TJ = 175 °C
TJ = 150 °C
1
TJ = 25 °C
0.1
0.0
g
Case style TO-252AA (D-PAK)
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
0.3
TJ = 175° C
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
TJ = 25 °C
0.01
0.001
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 15-Jun-15
Document Number: 93254
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CT - Junction Capacitance (pF)
100
10
1
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Thermal Impedance Z thJC (°C/W)
10
D = 0.5
1
D = 02
D = 0.1
D = 0.05
D = 0.02
0.1
Single Pulse
(Thermal Resistance)
D = 0.01
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1, Rectangular Pulse Duration (Seconds)
180
35
170
30
Average Power Loss (W)
Allowable Case Temperature (°C)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
160
150
DC
140
130
Square wave (D = 0.50)
rated VR applied
120
RMS Limit
25
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
20
15
10
DC
5
see note (1)
0
110
0
5
10
15
20
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
0
3
6
9
12
15
18
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 15-Jun-15
Document Number: 93254
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350
60
300
50
40
30
12 A, TJ = 125 °C
250
200
Qrr (nC)
trr (nC)
12 A, TJ = 125 °C
12 A, TJ = 25 °C
150
12 A, TJ = 25 °C
100
20
50
10
100
0
100
1000
1000
dIFdt (A/μs)
dIFdt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 15-Jun-15
Document Number: 93254
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12EWH06FN-M3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
12
E
W
H
06
FN
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (12 = 12 A)
3
-
Circuit configuration:
4
-
TRL -M3
8
9
E = single diode
Package identifier:
W = D-PAK
5
-
H = hyperfast recovery
6
-
Voltage rating (06 = 600 V)
7
-
FN = TO-252AA
8
-
None = tube
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-12EWH06FN-M3
VS-12EWH06FNTR-M3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
75
3000
Antistatic plastic tube
2000
2000
13" diameter reel
VS-12EWH06FNTRL-M3
3000
3000
13" diameter reel
VS-12EWH06FNTRR-M3
3000
3000
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95016
Part marking information
www.vishay.com/doc?95176
Packaging information
www.vishay.com/doc?95033
SPICE model
www.vishay.com/doc?95220
Revision: 15-Jun-15
Document Number: 93254
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5)
A
E
b3
Pad layout
C
A
(3)
0.010 M C A B
c2
A
L3 (3)
Ø1
4
Ø2
4
B
Seating
plane
H
D (5)
1
2
3
(2) L5
b
1
A
c
b2
0.06
MIN.
(1.524)
0.010 M C A B
0.093 (2.38)
0.085 (2.18)
(L1)
Detail “C”
Rotated 90 °CW
Scale: 20:1
H (7)
Lead tip
C
Gauge
plane
L2
SYMBOL
2
0.488 (12.40)
0.409 (10.40)
0.089
MIN.
(2.28)
Detail “C”
2x e
0.245
MIN.
(6.23)
D1
L4
3
0.265
MIN.
(6.74)
E1
MILLIMETERS
INCHES
C Seating
plane
C
Ø
L
NOTES
A1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
MIN.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
1.40
1.78
0.055
0.070
2.29 BSC
MIN.
MAX.
0.090 BSC
b
0.64
0.89
0.025
0.035
L
b2
0.76
1.14
0.030
0.045
L1
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
L3
0.89
1.27
0.035
0.050
c2
0.46
0.89
0.018
0.035
L4
-
1.02
-
0.040
3
2.74 BSC
L2
0.51 BSC
NOTES
0.108 REF.
0.020 BSC
D
5.97
6.22
0.235
0.245
5
L5
1.14
1.52
0.045
0.060
D1
5.21
-
0.205
-
3
Ø
0°
10°
0°
10°
E
6.35
6.73
0.250
0.265
5
Ø1
0°
15°
0°
15°
E1
4.32
-
0.170
-
3
Ø2
25°
35°
25°
35°
3
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC outline TO-252AA
Revision: 05-Dec-12
Document Number: 95016
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000