VS-8EWH06FNHM3 Datasheet

VS-8EWH06FNHM3
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Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr and soft
recovery
2, 4
• 175 °C maximum operating junction temperature
• For PFC CRM/CCM operation
TO-252AA (D-PAK)
1
N/C
• Low forward voltage drop
3
Anode
• Low leakage current
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
TO-252AA (D-PAK)
IF(AV)
8A
VR
600 V
VF at IF
1.3 V
DESCRIPTION / APPLICATIONS
trr (typ.)
18 ns
TJ max.
175 °C
Diode variation
Single die
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 143 °C
Non-repetitive peak surge current
IFSM
TJ = 25 °C
90
Peak repetitive forward current
IFM
TC = 143 °C, f = 20 kHz, d = 50 %
16
Operating junction and storage temperatures
TJ, TStg
8
A
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
IR = 100 μA
IF = 8 A
MIN.
TYP.
MAX.
600
-
-
-
2.0
2.4
IF = 8 A, TJ = 150 °C
-
1.3
1.8
VR = VR rated
-
-
50
TJ = 150 °C, VR = VR rated
-
-
500
UNITS
V
μA
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
8
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
Revision: 10-Jul-15
Document Number: 94739
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-8EWH06FNHM3
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
-
18
22
TJ = 25 °C
-
25
-
-
34
-
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
Reverse recovery time
trr
TJ = 125 °C
Peak recovery current
Reverse recovery charge
IRRM
TJ = 25 °C
TJ = 125 °C
IF = 8 A
dIF/dt = 200 A/μs
VR = 390 V
MAX.
UNITS
21
-
3.3
-
-
4.8
-
ns
A
TJ = 25 °C
-
39
-
TJ = 125 °C
-
90
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
RthJC
-
1.8
2.2
°C/W
Qrr
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
SYMBOL
TEST CONDITIONS
Approximate weight
Marking device
Case style TO-252AA (D-PAK)
0.3
g
0.01
oz.
8EWH06FNH
Revision: 10-Jul-15
Document Number: 94739
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWH06FNHM3
Vishay Semiconductors
100
1000
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
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TJ = 175 °C
10
1
TJ = 125 °C
TJ = 25 °C
100
TJ = 175 °C
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
TJ = 25 °C
0.01
0.001
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
100
200
300
400
500
600
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
C - Junction Capacitance (pF)
100
10
1
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
D = 0.01
0.01
1E-05
Single Pulse
(Thermal Resistance)
1E-04
1E-03
1E-02
1E-01
1E+00
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 10-Jul-15
Document Number: 94739
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWH06FNHM3
Vishay Semiconductors
180
50
170
45
150
DC
140
Square wave (D = 0.50)
rated VR applied
130
35
30
8 A, TJ = 25 °C
25
20
120
15
see note (1)
10
110
0
2
4
6
8
10
12
14
100
1000
IF(AV) - Average Forward Current (A)
dIFdt (A/μs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
350
20
18
RMS Limit
300
16
250
14
12
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
10
8
6
4
Qrr (nC)
IF - Average Power Loss (W)
8 A, TJ = 125 °C
40
160
trr (nC)
Allowable Case Temperature (°C)
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DC
4
8 A, TJ = 25 °C
50
0
2
8 A, TJ = 125 °C
150
100
2
0
200
6
8
10
12
0
100
1000
IF(AV) - Average Forward Current (A)
dIFdt (A/μs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
(1)
Revision: 10-Jul-15
Document Number: 94739
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWH06FNHM3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 10-Jul-15
Document Number: 94739
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWH06FNHM3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
8
E
W
H
06
FN
TRL
H
M3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Current rating (8 = 8 A)
3
-
Circuit configuration:
4
-
Package identifier:
E = single diode
W = D-PAK
5
-
H = hyperfast recovery
6
-
Voltage rating (06 = 600 V)
7
-
FN = TO-252AA
8
-
None = tube
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
H = AEC-Q101 qualified
10
-
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-8EWH06FNHM3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
75
3000
Antistatic plastic tube
VS-8EWH06FNTRHM3
2000
2000
13" diameter reel
VS-8EWH06FNTRRHM3
3000
3000
13" diameter reel
VS-8EWH06FNTRLHM3
3000
3000
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95519
Part marking information
www.vishay.com/doc?95518
Packaging information
www.vishay.com/doc?95033
Revision: 10-Jul-15
Document Number: 94739
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000