MS67C10 N & P Channel 60-V Dual MOSFETs Description SO-8 Package information These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • Fast switching • Green Device Available • Suit for 4.5V Gate Drive Applications Applications • DC Fan • Motor Drive Applications • Networking • Half / Full Bridge Topology Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS67C10] © Bruckewell Technology Corporation Rev. A -2014 MS67C10 N & P Channel 60-V Dual MOSFETs MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Parameter Rating Unit VDS Drain-Source Voltage 60 -60 V VGS Gate-Source Voltage ±20 ±20 V Drain Current - Continuous (TC =25°C) 4.5 -3.5 A Drain Current - Continuous (TC =70°C) 2.85 -2.21 A 18 -14 A ID IDM PD Drain Current - Pulsed 1 Power Dissipation (TC =25°C) 3.57 W Power Dissipation - Derate above 25°C 0.028 W/°C TJ Storage Temperature Range -55 to 150 °C TSTG Operating Junction Temperature Range -55 to 150 °C Thermal Resistance Ratings Symbol Parameter Typ. Max. RθJA Thermal Resistance Junction to ambient -- 75 RθJC Thermal Resistance Junction to Case -- 35 Units °C/W N-CH Electrical Characteristics (TJ=25 °C, unless otherwise) Off Characteristics Symbol Parameter Test Conditions Min Drain-Source Breakdown Voltage VGS = VGS, ID = 250uA BVDSS Temperature Coefficient Reference to 25°C , ID = 1mA IGSS Gate-Source Leakage Current VDS = 0 V , VGS = ±20 V IDSS Drain-Source Leakage Current BVDSS △BVDSS /△TJ On Characteristics Symbol Parameter RDS(on) VGS(th) Typ. Max. 60 V 0.05 V/°C ±100 VDS = 60 V , VGS = 0 V , TJ=25°C 1 VDS = 48 V , VGS = 0 V , TJ=125°C 10 Test Conditions Min Typ. Max. Static Drain-Source VGS = 10 V, ID = 6 A 45 54 On-Resistance VGS = 4.5 V, ID = 3 A 52 63 1.8 2.5 1.2 Gate Threshold Voltage △VGS(th) Temperature Coefficient gfs Forward Transconductance Publication Order Number: [MS67C10] VGS = VDS , ID = 250uA VDS = 10 V, ID = 4 A Units nA uA Units mΩ V -4.2 mV/°C 4.2 S © Bruckewell Technology Corporation Rev. A -2014 MS67C10 N & P Channel 60-V Dual MOSFETs Dynamic and switching Characteristics Symbol Parameter Qg Test Conditions Min Typ. Max. Units -- 14 21 nC -- 2.9 5 nC -- 2.3 4 nC -- 3.9 7 ns ID = 1 A , RG = 3.3 Ω, -- 12.6 24 ns VGS = 10 V , VDD = 30 V -- 23.1 44 ns -- 6.7 13 ns -- 800 1160 pF -- 380 550 pF -- 115 170 pF -- 1.7 3.4 Ω Min Typ. Max. Units -- -- 4.5 A -- -- 9 A -- -- 1 V 2,3 Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time 2,3 2,3 Rise Time td(off) Turn-Off Delay Time tf Fall Time CISS Input Capacitance VGS = 10 V 2,3 2,3 tr VDS = 30 V , ID = 4 A, 2,3 2,3 COSS Output Capacitance CRSS Reverse Transfer Capacitance Rg Total Gate Charge VDS = 15 V f = 1 MHz , VGS = 0 V VDS = 0 V , f = 1 MHz , VGS = 0 V Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage VG = VD = 0 V , Force Current VGS = 0 V , IS = 1 A , TJ = 25°C Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Publication Order Number: [MS67C10] © Bruckewell Technology Corporation Rev. A -2014 MS67C10 N & P Channel 60-V Dual MOSFETs ■Typical Electrical Characteristics - N-channel FIG.1-CONTINUOUS DRAIN CURRENT VS. TC FIG.2-NORMALIZED RDSON VS. TJ FIG.3-NORMALIZED VTH VS. TJ FIG.4-GATE CHARGE WAVEFORM FIG.5-NORMALIZED TRANSIENT IMPEDANCE FIG.6-MAXIMUM SAFE OPERATION AREA Publication Order Number: [MS67C10] © Bruckewell Technology Corporation Rev. A -2014 MS67C10 N & P Channel 60-V Dual MOSFETs P-CH Electrical Characteristics (TJ=25 °C, unless otherwise) Off Characteristics Symbol Parameter Test Conditions Min Drain-Source Breakdown Voltage VGS = VGS, ID = 250uA -60 BVDSS Temperature Coefficient Reference to 25°C , ID = 1mA IGSS Gate-Source Leakage Current VDS = 0 V , VGS = ±20 V IDSS Drain-Source Leakage Current BVDSS △BVDSS /△TJ On Characteristics Symbol Parameter Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) Temperature Coefficient gfs Forward Transconductance Dynamic and switching Characteristics Symbol Parameter Qg -1 VDS = -48 V , VGS = 0 V , TJ=125°C 10 Typ. Max. VGS = -10 V, ID = -6 A 87 105 VGS = -4.5 V, ID = -3 A 120 145 -1.6 -2.5 -1.0 VGS = VDS , ID = 250uA VDS = -10 V, ID = -6 A Test Conditions 2,3 Qgd Gate-Drain Charge 2,3 td(on) Turn-On Delay Time tr Rise Time 2,3 td(off) Turn-Off Delay Time tf Fall Time CISS Input Capacitance Output Capacitance CRSS Reverse Transfer Capacitance Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage mΩ V 3 mV/°C 5.5 S Units -- 10 15 nC -- 1.6 3.2 nC -- 3 6 nC -- 8 16 ns ID = 1 A , RG = 6 Ω, -- 15.4 30 ns VGS = -30 V , VDD = -30 V -- 42.5 80 ns -- 8.4 16 ns -- 785 1300 pF -- 175 300 pF -- 112 220 pF Min Typ. Max. Units -- -- -3.5 A -- -- -7 A -- -- -1 V VDS = -30 V , ID = -4 A, VGS = -10 V VDS = -30 V f = 1 MHz , VGS = 0 V Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions IS Units Max. 2,3 COSS uA Typ. 2,3 2,3 nA Min Total Gate Charge Gate-Source Charge V/°C ±100 Min Units V VDS = -60 V , VGS = 0 V , TJ=25°C 2,3 Qgs Max. -0.05 Test Conditions RDS(on) Typ. VG = VD = 0 V , Force Current VGS = 0 V , IS = -1 A , TJ = 25°C Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Publication Order Number: [MS67C10] © Bruckewell Technology Corporation Rev. A -2014 MS67C10 N & P Channel 60-V Dual MOSFETs ■Typical Electrical Characteristics - P-channel FIG.7-CONTINUOUS DRAIN CURRENT VS. TC FIG.8-NORMALIZED RDSON VS. TJ FIG.9-NORMALIZED VTH VS. TJ FIG.10-GATE CHARGE WAVEFORM FIG.11-NORMALIZED TRANSIENT IMPEDANCE FIG.12-MAXIMUM SAFE OPERATION AREA Publication Order Number: [MS67C10] © Bruckewell Technology Corporation Rev. A -2014 MS67C10 N & P Channel 60-V Dual MOSFETs Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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