MSD2N60 N-Channel MOSFET Description The MSD2N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge : 9.5nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V • 100% Avalanche Tested • RoHS compliant package Packing & Order Information Part No./ R：2,500/Reel Part No./ T：80/Tube , 4,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V Continuous Drain Current @ TC=25°C 2 A Continuous Drain Current @ TC=100°C 1.3 A ID Publication Order Number: [MSD2N60] © Bruckewell Technology Corporation Rev. A -2016 MSD2N60 N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit IDM Pulsed Drain Current 8.0 A dv/dt Peak Diode Recovery dv/dt 4.5 V/ns EAS Single Pulsed Avalanche Energy 120 mJ EAR Repetitive Avalanche Energy 5.4 mJ Power Dissipation (TC=25°C) 23 W 0.18 W -55 to +150 °C PD TJ/TSTG TL - Derate above 25°C Operating Junction and Storage Temperature Maximum lead temperature for soldering purposes, 1/8'' from 300 case for 5 seconds • Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter RθJc Junction-to-Case RθJA Junction-to-Ambient On Characteristics Symbol Test Conditions Maximum Units 2.87 °C/W 50 Min Typ. Max. Units VGS VDS = VGS, ID = 250μA 2.0 -- 4.0 V RDS(ON) VGS = 10 V , ID = 3.5 A -- 4.0 4.7 Ω Min Typ. Max. Units 600 -- -- V -- 0.6 -- V/°C -- -- 10 μA Off Characteristics Symbol Test Conditions BVDSS VGS = 0 V , ID = 250 μA △BVDSS /△TJ ID = 250μA, Referenced to 25°C IDSS VDS = 600 V , VGS = 0 V VDS = 480 V , TC = 125°C 100 IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA Min Typ. Max. Units -- 320 420 pF -- 35 46 pF -- 4.5 6.0 pF Dynamic Characteristics Symbol Test Conditions CISS COSS VDS = 15 V, VGS = 0 V, F = 1.0MHz CRSS Publication Order Number: [MSD2N60] © Bruckewell Technology Corporation Rev. A -2016 MSD2N60 N-Channel MOSFET Switching Characteristics Symbol Test Conditions td(on) Min Typ. Max. Units -- 8 30 ns tr VDS = 300 V, ID = 2 A, -- 23 60 ns td(off) RG = 25 Ω -- 25 60 ns -- 28 70 ns -- 9.5 13 nC -- 1.6 -- nC -- 4.0 -- nC Min Typ. Max. Units IS -- -- 2.0 ISM -- -- 6.0 -- -- 1.4 V -- 230 -- ns -- 1.0 -- nC tf Qg Qgs VDS = -480 V , ID = 2 A, VGS = 10 V Qgd Source-Drain Diode Maximum Ratings and Characteristics Symbol Test Conditions VSD trr Qrr A IS = 2 A , VGS = 0 V IS = 2 A , VGS = 0 V , dIF/dt=100A/μs Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤2.0A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ■Characteristics Curve Publication Order Number: [MSD2N60] © Bruckewell Technology Corporation Rev. A -2016 MSD2N60 N-Channel MOSFET FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MSD2N60] © Bruckewell Technology Corporation Rev. A -2016 MSD2N60 N-Channel MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MSD2N60] © Bruckewell Technology Corporation Rev. A -2016 MSD2N60 N-Channel MOSFET ■Characteristics Test Circuit & Waveform FIG.12-RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORMS FIG.13-GATE CHARGE TEST CIRCUIT & WAVEFORM FIG.14-UNCLAMPED LINDUCTIVE SWITCHING TEST CIRCUIT & WAVEFORMS Publication Order Number: [MSD2N60] © Bruckewell Technology Corporation Rev. A -2016 MSD2N60 N-Channel MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Publication Order Number: [MSD2N60] © Bruckewell Technology Corporation Rev. A -2016 MSD2N60 N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSD2N60] © Bruckewell Technology Corporation Rev. A -2016