MSF8N80 800V N-Channel MOSFET Description The MSF8N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • RDS(on) (typ 1.3 Ω )@VGS=10V • Gate Charge (Typical 39nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (150°C) • RoHS compliant package Application • Adapter • Switching Mode Power Supply Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage ±30 V Drain Current -Continuous (TC=25°C) 8 A Drain Current -Continuous (TC=100°C) 5.0 A IDM Drain Current Pulsed 32 A EAS Single Pulsed Avalanche Energy 850 mJ EAR Repetitive Avalanche Energy 17.8 mJ ID Publication Order Number: [MSF8N80] © Bruckewell Technology Corporation Rev. A -2014 MSF8N80 800V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter dv/dt Peak Diode Recovery dv/dt TJ,TSTG Operating Junction Temperature TL PD TL Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Power Dissipation (TC = 25 °C) Derating Factor above 25 °C Value Unit 4.5 V/ns -55~+150 °C 300 °C 59 W 0.48 W/°C • Drain current limited by maximum junction temperature Thermal characteristics Symbol Parameter Max. RθJc Junction-to-Case 2.1 RθJA Junction-to-Ambient 62.5 °C/W On Characteristics Symbol Test Conditions VGS VDS = VGS, ID = 250μA *RDS(ON) VGS = 10 V , ID = 4 A Off Characteristics Symbol Test Conditions BVDSS VGS = 0 V , ID = 250μA △BVDSS /△TJ ID = 250μA, Referenced to 25°C IDSS Units VDS = 800 V , VGS = 0 V VDS = 640 V , VC= 125°C Min Typ. Max. Units 3.0 -- 5.0 V -- 1.3 1.6 Ω Min Typ. Max. Units 800 -- -- V -- 0.6 -- V/°C -- -- 10 μA 100 IGSSF VGS = 30 V , VDS = 0 V -- -- 100 nA IGSSR VGS = -30 V , VDS = 0 V -- -- -100 nA Min Typ. Max. Units -- 37 -- nC -- 11 -- nC Qgd -- 15 -- nC td(on) -- 50 -- ns Dynamic Characteristics Symbol Test Conditions Qg Qgs VDG = 640 V,ID = 8 A, VGS = 10 V tr VDS = 400 V, ID = 8 A, -- 100 -- ns td(off) RG = 10 Ω -- 70 -- ns -- 70 -- ns tf Publication Order Number: [MSF8N80] © Bruckewell Technology Corporation Rev. A -2014 MSF8N80 800V N-Channel MOSFET Dynamic Characteristics Symbol Test Conditions Min Typ. Max. Units -- 1700 -- pF -- 140 -- pF -- 15 -- pF Min Typ. Max. Units IS -- -- 8 ISM -- -- 32 -- -- 1.4 V -- 0.7 -- us -- 8.0 -- μC CISS COSS VDS = 25 V, VGS = 0 V, f = 1.0MHz CRSS Source-Drain Diode Characteristics Symbol Test Conditions VSD trr Qrr A IS = 8 A , VGS = 0 V IF = 8 A ,VGS = 0 V , dIF/dt=100A/μs Notes: 1. Repeativity rating : pulse width limited by junction temperature 2. L = 25.0mH, IAS =8.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 8.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Publication Order Number: [MSF8N80] © Bruckewell Technology Corporation Rev. A -2014 MSF8N80 800V N-Channel MOSFET ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MSF8N80] © Bruckewell Technology Corporation Rev. A -2014 MSF8N80 800V N-Channel MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MSF8N80] © Bruckewell Technology Corporation Rev. A -2014 MSF8N80 800V N-Channel MOSFET ■Characteristics Test Circuit & Waveform Fig 12. Resistive Switching Test Circuit & Waveforms Fig 13. Gate Charge Test Circuit & Waveform Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Publication Order Number: [MSF8N80] © Bruckewell Technology Corporation Rev. A -2014 MSF8N80 800V N-Channel MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Publication Order Number: [MSF8N80] © Bruckewell Technology Corporation Rev. A -2014 MSF8N80 800V N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. 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Publication Order Number: [MSF8N80] © Bruckewell Technology Corporation Rev. A -2014