V10PN50-M3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5 A FEATURES TMBS® eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Trench MOS Schottky technology • Low forward voltage drop, low power losses 1 • High efficiency operation 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C TO-277A (SMPC) K Anode 1 Cathode Anode 2 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 50 V IFSM 180 A VF at IF = 10 A 0.40 V TJ max. 150 °C Package TO-277A (SMPC) Diode variation Single die MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage V10PN50 UNIT 10N5 VRRM 50 V (1) 10 IF (2) 5.3 Maximum DC reverse voltage VDC 35 V Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 180 A TJ, TSTG -40 to +150 °C Maximum average forward rectified current (fig. 1) Operating junction and storage temperature range IF A Notes (1) Mounted on 30 mm x 30 mm 2 oz. pad PCB (2) Free air, mounted on recommended copper pad area Revision: 04-Dec-13 Document Number: 89965 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V10PN50-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A TA = 25 °C IF = 10 A Instantaneous forward voltage VF (1) IF = 5 A TA = 125 °C IF = 10 A TA = 25 °C VR = 50 V Reverse current SYMBOL TA = 125 °C IR (2) TYP. MAX. 0.40 - 0.47 0.55 0.30 - UNIT V 0.40 0.49 50 1500 μA 32 85 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL V10PN50 RJA (1) (2) 70 RJM (3) 4 UNIT °C/W Notes (1) Free air, mounted on recommended copper pad area; thermal resistance R JA - junction-to-ambient (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (3) Mounted on 30 mm x 30 mm 2 oz. pad PCB; thermal resistance R JM - junction-to-mount measured at cathode side ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V10PN50-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel V10PN50-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel 11 TM = 130 °C, RthJM = 4 °C/W 10 9 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 8 7 6 TA = 25 °C, RthJA = 70 °C/W 5 4 3 2 1 TM measured at cathode side 0 0 25 50 75 100 125 150 5.6 5.2 4.8 4.4 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 D = 0.8 D = 0.3 D = 0.5 D = 0.2 D = 0.1 D = 1.0 T D = tp/T 0 1 2 3 4 5 6 7 8 tp 9 10 11 12 Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve (D = Duty Cycle = 0.5) Fig. 2 - Forward Power Loss Characteristics Revision: 04-Dec-13 Document Number: 89965 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V10PN50-M3 www.vishay.com Vishay General Semiconductor 10 000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C TJ = 25 °C f = 60 MHz Vsig = 50 mVp-p 1000 100 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 1 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 20 40 60 80 50 Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 1000 100 10 Reverse Voltage (V) 100 100 10 Junction to Ambient 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 04-Dec-13 Document Number: 89965 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V10PN50-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC TO-277A Revision: 04-Dec-13 Document Number: 89965 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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