CLY 2 GaAs FET ________________________________________________________________________________________________________ Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % 5 6 3 2 ESD: Type CLY 2 1 Electrostatic discharge sensitive device, observe handling precautions! Marking Y2 Ordering code (taped) Q62702-L96 . G Maximum ratings 1 2 Pin Configuration 3 4 5 S D D S Symbol Package 1) 6 G MW 6 Unit Drain-source voltage VDS 9 V Drain-gate voltage VDG 12 V Gate-source voltage VGS -6 V ID 600 mA Channel temperature TCh 150 °C Storage temperature Tstg -55...+150 °C Total power dissipation (TS < 50°C) 2) Ptot 900 mW RthChS ≤110 K/W Drain current Thermal Resistance Channel-soldering point 2) 1) Dimensions see chapter Package Outlines 2) TS is measured on the source lead at the soldering point to the pcb. Siemens Aktiengesellschaft pg. 1/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET ________________________________________________________________________________________________________ Electrical characteristics (TA = 25°C , unless otherwise specified) Characteristics Drain-source saturation current VDS = 3 V typ max Unit IDSS 300 450 650 mA ID(p) - 5 50 µA IG(p) - 5 20 µA VGS(p) -3.8 -2.8 -1.8 V G - 15.5 - dB G - 14.5 - dB Po 22.5 23.5 P1dB - 23.5 - dBm P1dB - 27.0 - dBm PAE - 55 - % VGS = -3.8 V Gate pinch-off current VDS = 3 V min VGS = 0 V Drain-source pinch-off current VDS = 3 V Symbol VGS = -3.8 V Pinch-off Voltage VDS = 3 V ID = 50 µA * Small Signal Gain ) VDS = 3 V ID = 180 mA Pin = -5 dBm f = 1.8 GHz Small Signal Gain **) VDS = 3 V ID = 180 mA Pin = -5 dBm f = 1.8 GHz Output Power VDS = 3V dBm ID = 180 mA f = 1.8 GHz Pin = 10 dBm 1dB-Compression Point VDS = 3 V ID = 180 mA f = 1.8 GHz 1dB-Compression Point VDS = 5 V ID = 180 mA f = 1.8 GHz Power Added Efficiency VDS = 3V ID = 180mA f = 1.8 GHz Pin = 10 dBm * ) Matching conditions for maximum small signal gain ( not identical with power matching conditions ! ) ** ) Power matching conditions: f = 1.8 GHz Source Match: Γms: MAG = 0.74, ANG 132°; Load Match: Γml: ;MAG 0.61, ANG -153° Siemens Aktiengesellschaft pg. 2/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET ________________________________________________________________________________________________________ Draincurrent [A] Output Characteristics 0,5 0,45 0,4 0,35 0,3 0,25 0,2 0,15 0,1 0,05 0 PtotDC VGS=0V VGS=-0.5V VGS=-1V VGS=-1.5V VGS=-2V VGS=-2.5V 0 1 2 3 4 5 6 7 Drain-Source Voltage [V] Compression Power vs. Drain-Source Voltage f = 1.8GHz; ID = 0.5IDSS P1dB ηD 40 [dBm] 35 80 [%] 70 30 60 25 50 20 40 15 30 10 20 5 10 0 0 0 1 2 3 4 5 [V] 6 Dra in-Source Voltage Siemens Aktiengesellschaft pg. 3/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET ________________________________________________________________________________________________________ typ. Common Source S-Parameters VDS = 3 V ID = 180 mA Zo = 50 Ω f GHZ S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG 0.100 0.150 0.200 0.250 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.200 1.400 1.500 1.600 1.800 2.000 2.200 2.400 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 0.99 0.99 0.98 0.97 0.96 0.94 0.92 0.89 0.86 0.84 0.82 0.80 0.77 0.74 0.73 0.72 0.72 0.71 0.71 0.71 0.71 0.72 0.74 0.76 0.78 0.79 0.80 0.83 9.17 9.11 9.01 8.89 8.75 8.40 8.03 7.61 7.22 6.82 6.45 6.10 5.45 4.92 4.71 4.48 4.10 3.77 3.47 3.19 3.06 2.52 2.12 1.85 1.61 1.43 1.23 1.06 0.007 0.011 0.014 0.017 0.021 0.026 0.031 0.036 0.039 0.043 0.045 0.048 0.052 0.055 0.056 0.057 0.059 0.060 0.062 0.063 0.063 0.065 0.066 0.073 0.078 0.085 0.085 0.087 0.15 0.16 0.16 0.16 0.16 0.17 0.18 0.18 0.19 0.20 0.20 0.21 0.22 0.23 0.23 0.24 0.25 0.26 0.27 0.29 0.29 0.32 0.36 0.39 0.42 0.45 0.49 0.52 -12.0 -17.9 -23.7 -29.5 -35.1 -46.0 -56.4 -66.2 -75.4 -84.1 -92.1 -99.7 -113.6 -125.9 -131.5 -137.1 -147.4 -157.2 -165.3 -173.3 -177.4 165.7 151.7 139.9 127.4 116.7 106.3 97.1 171.6 167.4 163.4 159.3 155.4 147.8 140.7 134.1 128.0 122.3 117.2 112.3 103.6 95.8 92.1 88.5 81.7 75.0 68.8 63.0 60.1 47.2 36.4 26.5 15.3 4.6 -5.9 -14.8 83.3 80.8 77.6 74.7 72.4 67.0 62.5 58.0 54.4 51.2 48.3 46.1 41.8 38.6 37.2 36.2 34.0 31.9 31.2 29.7 28.9 28.4 29.7 30.6 28.2 24.0 20.9 17.7 -16.6 -24.2 -31.2 -39.0 -45.9 -58.2 -69.2 -79.0 -87.0 -94.2 -100.4 -105.3 -115.1 -122.9 -125.7 -129.4 -135.0 -139.7 -143.0 -147.2 -150.0 -159.7 -167.5 -173.1 179.2 174.3 167.8 160.9 Additional S-Parameter available on CD Siemens Aktiengesellschaft pg. 4/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET ________________________________________________________________________________________________________ typ. Common Source S-Parameters VDS = 5 V ID = 180 mA Zo = 50 Ω f GHZ 0.100 0.150 0.200 0.250 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.200 1.400 1.500 1.600 1.800 2.000 2.200 2.400 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 S11 MAG ANG S21 MAG ANG S12 MAG ANG 0.99 0.99 0.98 0.97 0.96 0.94 0.91 0.89 0.86 0.84 0.81 0.80 0.76 0.74 0.73 0.72 0.72 0.71 0.71 0.71 0.71 0.73 0.75 0.77 0.78 0.79 0.81 0.84 9.30 9.23 9.13 9.00 8.85 8.48 8.08 7.64 7.23 6.81 6.43 6.07 5.40 4.87 4.65 4.42 4.04 3.71 3.41 3.13 3.00 2.47 2.07 1.80 1.56 1.37 1.18 1.00 0.007 0.010 0.014 0.017 0.020 0.026 0.030 0.034 0.038 0.041 0.043 0.045 0.048 0.051 0.052 0.052 0.054 0.054 0.055 0.056 0.056 0.057 0.059 0.067 0.074 0.082 0.083 0.086 -12.3 -18.4 -24.3 -30.3 -36.1 -47.2 -57.8 -67.8 -77.1 -85.9 -93.9 -101.5 -115.4 -127.6 -133.2 -138.8 -149.0 -158.6 -166.6 -174.5 -178.5 164.9 151.1 139.4 126.9 116.1 105.6 96.3 171.3 166.9 162.8 158.5 154.6 146.7 139.4 132.6 126.3 120.6 115.3 110.4 101.4 93.6 89.8 86.1 79.2 72.3 66.1 60.1 57.1 43.9 32.5 22.1 10.5 -0.6 -11.6 -20.8 83.1 80.0 77.2 73.6 71.1 65.8 61.0 56.3 52.8 49.5 46.4 44.2 40.1 36.9 35.6 34.6 32.7 30.9 30.9 29.9 29.4 30.8 34.3 36.7 34.7 30.2 26.7 22.9 S22 MAG 0.27 0.27 0.26 0.26 0.26 0.26 0.25 0.25 0.25 0.24 0.24 0.24 0.24 0.24 0.24 0.24 0.25 0.26 0.27 0.28 0.29 0.32 0.35 0.40 0.43 0.47 0.51 0.54 ANG -10.8 -15.8 -20.4 -25.7 -30.5 -39.2 -47.7 -55.4 -62.2 -68.6 -74.1 -79.2 -88.8 -96.8 -100.2 -103.9 -110.4 -116.2 -120.4 -125.6 -129.1 -140.6 -150.6 -158.2 -167.6 -174 178 169.6 Additional S-Parameter available on CD Siemens Aktiengesellschaft pg. 5/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET ________________________________________________________________________________________________________ Total Power Dissipation Ptot = f(Ts) 1.0 [W] 0.8 0.6 0.4 0.2 0 0 50 100 O C 150 Ts Permissible Pulse Load Ptotmax/PtotDC = f(tp) Siemens Aktiengesellschaft pg. 6/77 17.12.96 HL EH PD 21 CLY 2 GaAs FET ________________________________________________________________________________________________________ CLY2 Power GaAs-FET Matching Conditions Definition: Γ Γ Measured Data: Typ f [GHz] VDS [V] ID [mA] P-1dB [dBm] Gain [dB] Γms MAG Γms ANG Γml MAG Γml ANG CLY2 0.9 3 5 6 5 6 2 3 4 5 6 3 5 175 175 175 175 175 175 175 175 175 175 175 175 22.8 25.8 26.9 25.8 26.9 19.0 22.8 24.5 25.8 26.8 21.5 26.1 15.7 16.5 16.9 16.1 16.9 15.0 15.4 15.6 15.7 16.0 13.0 13.0 0.49 0.52 0.50 0.68 0.76 0.75 0.70 0.75 0.72 0.72 0.70 0.67 75 75 76 106 113 130 125 131 131 135 158 152 0.42 0.22 0.21 0.42 0.34 0.52 0.45 0.41 0.38 0.35 0.46 0.36 -165 -172 -156 143 139 -171 -172 166 163 155 -179 -178 1.5 1.8 2.4 Note: Gain is small signal gain @ Γms and Γml Siemens Aktiengesellschaft pg. 7/77 17.12.96 HL EH PD 21