Power Transistors 2SB1645 Silicon PNP triple diffusion planar type Darlington Unit: mm 15.5±0.5 Rating Unit VCBO −160 V Collector to emitter voltage VCEO −160 V Emitter to base voltage VEBO −5 V Peak collector current ICP −15 A Collector current IC −8 A PC 100 W TC = 25°C Ta = 25°C (23.4) (4.5) (1.2) 5° 0.7±0.1 5.45±0.3 10.9±0.5 5° 1 2 5.5±0.3 Symbol 5° 1.1±0.1 3 1: Base 2: Collector 3: Emitter TOP-3E Package (2.0) Parameter Collector to base voltage 3.3±0.3 ■ Absolute Maximum Ratings TC = 25°C 3.0±0.3 5° 5° (4.0) 2.0±0.2 18.6±0.5 (2.0) Solder Dip • Satisfactory forward current transfer ratio hFE characteristics • Wide area of safe operation (ASO) • Optimum for the output stage of a HiFi audio amplifier 26.5±0.5 (10.0) 5° (2.0) ■ Features Collector power dissipation φ 3.2±0.1 22.0±0.5 For power amplification Internal Connection 3 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C C B E ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current Max Unit ICBO VCB = −160 V, IE = 0 Conditions Min Typ −100 µA ICEO VCB = −160 V, IE = 0 −100 µA Emitter cutoff current IEBO VEB = −5 V, IC = 0 −100 µA Collector to emitter voltage VCEO IC = −10 mA, IB = 0 −160 Forward current transfer ratio hFE1 VCE = −5 V, IC = −1 A 500 * VCE = −5 V, IC = −7 A 3 500 Collector to emitter saturation voltage VCE(sat) IC = −7 A, IB = −7 mA Base to emitter saturation voltage VBE(sat) IC = −7 A, IB = −7 mA hFE2 V 15 000 −3 −3 V V fT VCE = −10 V, IC = − 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = 7 A, IB1 = −7 mA, IB2 = 7 mA 1.0 µs Storage time tstg VCC = −50 V 1.5 µs Fall time tf 1.2 µs Transition frequency Note) *: Rank classification Rank hFE2 P Q 5 000 to 15 000 3 500 to 10 000 1 2SB1645 Power Transistors PC Ta (1) 100 (1) TC = Ta (2) With a 100 × 100 × 2 mm3 Al heat sink (3) Without heat sink 80 60 Area of safe operation (ASO) −100 Non repetitive pulse TC = 25°C ICP Collector current IC (A) t = 1 ms −10 IC t = 10 ms t=1s −1 − 0.1 40 VCEO max. Collector power dissipation PC (W) 120 − 0.01 20 (2) (3) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 2 − 0.001 −1 −10 −100 −1 000 Collector to emitter voltage VCE (V)