Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington Unit: mm For power amplification ● 1.4 1.4±0.1 0.8±0.1 ■ Absolute Maximum Ratings 2.54±0.3 Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 12 V Peak collector current ICP 14 A Collector current IC 7 A dissipation 50 PC Ta=25°C 2.5±0.2 +0.3 0.1–0 2.54±0.3 (TC=25˚C) Parameter Collector power TC=25°C 1.4±0.1 0.5±0.1 ● 4.6±0.2 1.5 ● 10.5±0.3 Extremely satisfactory linearity of the forward current transfer ratio hFE High collector to base voltage VCBO Wide area of safe operation (ASO) TO-220(c) type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 3.0±0.5 10.1±0.3 ● 1.5±0.3 ■ Features 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Package(c) Internal Connection W 1.4 C B Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C E ■ Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 500V, IE = 0 100 µA ICEO VCE = 400V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 12V, IC = 0 100 mA Collector to emitter voltage VCEO(sus)* IC = 100mA, RBE = ∞ 400 hFE1 VCE = 2V, IC = 2A 500 hFE2 VCE = 2V, IC = 6A 200 Collector to emitter saturation voltage VCE(sat) IC = 7A, IB = 70mA 2.0 V Base to emitter saturation voltage VBE(sat) IC = 7A, IB = 70mA 2.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Collector output capacitance Cob Collector cutoff current Forward current transfer ratio *V CEO(sus) Test circuit IC = 7A, IB1 = 70mA, IB2 = –70mA, VCC = 300V VCB = 10V, IE = 0, f = 1MHz 50/60Hz mercury relay V 20 MHz 1.5 µs 5.0 µs 6.5 µs 70 pF X L 10mH Y 120Ω 5V 1Ω 15V G 1 Power Transistors 2SD2606 PC — Ta Area of safe operation (ASO) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=1.4W) (1) 50 40 30 20 (2) 10 (3) (4) 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 t=0.1ms IC 1ms 3 1s 1 0.3 0.1 Non repetitive pulse 0.03 T =25˚C C 0 0 10 ICP Collector current IC (A) Collector power dissipation PC (W) 60 10 30 100 300 1000 Collector to emitter voltage VCE (V)