Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 For power amplification with high forward current transfer ratio ■ Absolute Maximum Ratings +0.3 1.0±0.2 10.0 –0. High forward current transfer ratio hFE which has satisfactory linearity High emitter to base voltage VEBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 0.85±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 1:Base 2:Collector 3:Emitter I Type Package 3 (TC=25˚C) 7.0±0.3 VCBO 100 V VCEO 60 V Emitter to base voltage VEBO 15 V Peak collector current ICP 12 A Collector current IC 6 A Base current IB 3 A Ta=25°C dissipation 2.5 0.75±0.1 Tj Storage temperature Tstg 0.5 max. 1.1±0.1 15 PC Junction temperature 0 to 0.15 3.0±0.2 1 Collector power TC=25°C ■ Electrical Characteristics 3 2.3±0.2 150 ˚C –55 to +150 ˚C 0.9±0.1 0 to 0.15 2 W 1.3 Unit: mm 1.0 Collector to base voltage Collector to emitter voltage 3.5±0.2 2.0±0.2 1.0 Unit 1.0 max. Ratings 7.2±0.3 Symbol 10.2±0.3 Parameter 2.5±0.2 ● 1.1±0.1 0.75±0.1 2.5±0.2 ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 100V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 15V, IC = 0 100 µA Collector to emitter voltage VCEO IC = 25mA, IB = 0 60 Forward current transfer ratio hFE* VCE = 4V, IC = 1A 300 Collector to emitter saturation voltage VCE(sat) IC = 5A, IB = 0.1A Transition frequency fT VCE = 12V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE IC = 5A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V V 2000 0.5 50 V MHz µs 0.3 1.5 µs 0.6 µs Rank classification Rank hFE Q P 300 to 1200 800 to 2000 1 Power Transistors 2SD1755 PC — Ta IC — VCE 5 15 (1) 10 5 IB=10mA 9mA 8mA 4 7mA 6mA 3 5mA 4mA 2 3mA 2mA 1 1mA (2) 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 10 12 IC/IB=50 3 25˚C 0.1 0.03 0.01 0.1 0.3 1 3 3000 TC=100˚C 1000 25˚C –25˚C 300 100 30 10 0.01 0.03 10 0.1 0.3 1 3 0.01 0.1 0.3 1 Switching time ton,tstg,tf (µs) 300 100 30 10 3 VCE=12V f=10MHz TC=25˚C 300 100 30 10 3 1 10 3 tstg 1 tf 0.3 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 Area of safe operation (ASO) Non repetitive pulse TC=25˚C 30 ton 0.1 ICP 10 I C t=1ms 10ms 3 300ms 1 0.3 0.1 0.03 0.01 0.01 100 10 100 0.03 30 3 Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=50(IB1=–IB2) VCC=50V TC=25˚C 30 1000 10 0.03 0.1 0.01 0.03 10 ton, tstg, tf — IC IE=0 f=1MHz TC=25˚C 3 –25˚C 0.1 Collector current IC (A) 100 1 25˚C 0.3 Cob — VCB 0.3 0.3 VCE=4V 10000 1 0.1 TC=100˚C fT — IC 30000 Collector current IC (A) 3000 1 Collector current IC (A) Collector current IC (A) 100˚C 0.3 3 1000 10000 TC=–25˚C 1 IC/IB=50 hFE — IC 100000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 8 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 10 6 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V) TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) 0 2 VCE(sat) — IC 6 Collector current IC (A) Collector power dissipation PC (W) 20 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD1755 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3