Power Transistors 2SD1751 Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 For power amplification Complementary to 2SB1170 3.5±0.2 0.8±0.2 7.2±0.3 3.0±0.2 ■ Features ■ Absolute Maximum Ratings Parameter +0.3 1.0±0.2 0.4±0.1 2.3±0.2 4.6±0.4 1 2 1:Base 2:Collector 3:Emitter I Type Package 3 (TC=25˚C) Symbol Ratings Unit 7.0±0.3 3.5±0.2 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 4 A Collector current IC 2 A 0 to 0.15 Ta=25°C dissipation Junction temperature Storage temperature –55 to +150 ■ Electrical Characteristics 1.0 1.0 max. 7.2±0.3 0 to 0.15 2 3 ˚C ˚C 0.9±0.1 2.3±0.2 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25˚C) Parameter Symbol Collector cutoff current 1 150 Tstg 0.5 max. 1.1±0.1 W 1.3 Tj 2.5 0.75±0.1 15 PC 10.2±0.3 3.0±0.2 Collector power TC=25°C Unit: mm 1.0 2.0±0.2 2.5±0.2 ● 0.85±0.1 0.75±0.1 2.5±0.2 ● 1.1±0.1 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0 –0. ● max Unit ICES VCE = 60V, VBE = 0 Conditions min typ 200 µA ICEO VCE = 30V, IB = 0 300 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 1 mA Collector to emitter voltage VCEO IC = 30mA, IB = 0 60 hFE1 VCE = 4V, IC = 0.1A 35 hFE2* VCE = 4V, IC = 1A 70 Base to emitter voltage VBE VCE = 4V, IC = 1A Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.2A Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio *h FE2 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A V 250 1.2 2 V V 20 MHz 0.2 µs 3.5 µs 0.7 µs Rank classification Rank Q P hFE2 70 to 150 120 to 250 1 Power Transistors 2SD1751 PC — Ta IC — VCE IC — VBE 5 VCE=4V 10 5 25˚C 5 4 Collector current IC (A) (1) 15 6 TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 20 IB=100mA 80mA 3 50mA 40mA 30mA 2 20mA 10mA 1 3 2 1 5mA (2) –25˚C TC=100˚C 4 1mA 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 8 10 3000 Transition frequency fT (MHz) 25˚C 1 0.3 –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 300 100 TC=100˚C 25˚C –25˚C 30 10 3 1 0.01 0.03 10 0.1 0.3 1 3 3 IC 1ms 1 300ms 0.3 0.1 0.03 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE 30 10 3 1 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) t=10ms ICP 100 0.1 0.01 0.03 10 103 10 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 3.0 VCE=10V f=1MHz TC=25˚C 300 Collector current IC (A) Non repetitive pulse TC=25˚C 2.5 0.3 Area of safe operation (ASO) 30 2.0 fT — IC 1000 TC=100˚C 1.5 VCE=4V Forward current transfer ratio hFE 10 1.0 1000 IC/IB=10 30 3 0.5 Base to emitter voltage VBE (V) hFE — IC 100 Collector current IC (A) 0 10000 100 Collector current IC (A) 2 12 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 6 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10