IRF IRGSL14C40LPBF

PD - 95193A
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
Features
• Most Rugged in Industry
• Logic-Level Gate Drive
• > 6KV ESD Gate Protection
• Low Saturation Voltage
• High Self-clamped Inductive Switching Energy
• Lead-Free
TERMINAL DIAGRAM
Collector
•BVCES = 370V min, 430V max
•IC @ TC = 110°C = 14A
•VCE(on) typ= 1.2V @7A @25°C
• IL(min)=11.5A @25°C,L=4.7mH
R1
Gate
R2
Emitter
Description
The advanced IGBT process family includes a
MOS gated, N-channel logic level device which
is intended for coil-on-plug automotive ignition
applications and small-engine ignition circuits.
Unique features include on-chip active voltage
clamps between the Gate-Emitter and
Gate-Collector which provide over voltage
protection capability in ignition circuits.
JEDEC TO-263AB
JEDEC TO-262AA
JEDEC TO-220AB
IRGS14C40L
IRGSL14C40L
IRGB14C40L
NOTE: IRGS14C40L is available in tape and reel. Add a suffix of
TRR or TRL to the part number to determine the orientation of the
device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.
Absolute Maximum Ratings
Parameter
Max
Unit
Condition
VCES
Collector-to-Emitter Voltage
Clamped
V
RG = 1K ohm
IC @ TC = 25°C
Continuous Collector Current
20
A
VGE = 5V
IC @ TC = 110°C
Continuous Collector Current
14
A
VGE = 5V
IG
Continuous Gate Current
1
mA
IGp
Peak Gate Current
10
mA tPK = 1ms, f = 100Hz
VGE
Gate-to-Emitter Voltage
PD @ TC = 25°C
Clamped
V
Maximum Power Dissipation
125
W
PD @ T = 110°C Maximum Power Dissipation
54
W
TJ
Operating Junction and
- 40 to 175
°C
TSTG
Storage Temperature Range
- 40 to 175
°C
VESD
Electrostatic Voltage
IL
Self-clamped Inductive Switching Current
6
KV C = 100pF, R = 1.5K ohm
11.5
A
Min
Typ
L = 4.7mH, T = 25°C
Thermal Resistance
Parameter
Max
RθJC
Thermal Resistance, Junction-to-Case
1.2
RθJA
Thermal Resistance, Junction-to-Ambient
40
Unit
°C/W
(PCB Mounted, Steady State)
ZθJC
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Transient Thermal Impedance, Juction-to-Case (Fig.11)
Page 1
11/19/04
Ignition IGBT
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Off-State Electrical Charasteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max
BVCES Collector-to-Emitter Breakdown Voltage
370 400
BVGES Gate-to-Emitter Breakdown Voltage
10
I CES
R1
Gate Series Resistance
R2
Gate-to-Emitter Resistance
24
Fig
V
I G=2m A
15
µA
R G=1K ohm, VCE = 250V
100
µA
R G=1K ohm, VCE = 250V, TJ =150°C
V
I C = -10m A
28
20
Conditions
R G = 1K ohm, I C=7A, VGE = 0V
ohm
75
10
Unit
V
12
Collector-to-Emitter Leakage Current
BVCER Emitter-to-Collector Breakdown Voltage
430
30
K ohm
On-State Electrical Charasteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max
1.2
VCE(on) Collector-to-Emitter Saturation
1.35 1.55
Voltage
VGE(th) Gate Threshold Voltage
1.3
Transconductance
10
IC
Collector Current
20
Conditions
Fig
I C = 7A, VGE = 4.5V
V
I C = 10A, VGE = 4.5V
1
o
2
o
4
1.35 1.55
I C = 10A, VGE = 4.5V, TC= -40 C
1.5
1.7
I C = 14A, VGE = 5.0V, TC= -40 C
1.55 1.75
I C = 14A, VGE = 5.0V
o
I C = 14A, VGE = 5.0V, TC=150 C
1.6
1.8
1.8
2.2
0.75
gfs
Unit
1.40
VCE = VGE, I C = 1 m A, TC=25 C
o
VCE = VGE, I C = 1 m A, TC=150 C
S
VCE = 25V, I C = 10A, TC=25 C
A
VCE = 10V, VGE = 4.5V
1.8
15
19
o
V
3, 5
8
o
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max
Qg
Total Gate charge
27
Q ge
Q gc
Gate - Emitter Charge
2.5
Gate - Collector Charge
10
Unit
nC
t d(on) Turn - on delay time
0.6
0.9
1.35
Rise time
tr
t d(off) Turn - off delay time
1.6
3.7
2.8
6
4
8.3
µs
Conditions
Fig
I C = 10A, VCE=12V, VGE=5V
7
I C = 10A, VCE=12V, VGE=5V
I C = 10A, VCE=12V, VGE=5V
15
VGE=5V, RG=1K ohm, L=1mH, VCE=14V
12
VGE=5V, RG=1K ohm, L=1mH, VCE=14V
VGE=5V, RG=1K ohm, L=1mH, VCE=300V
14
C ies
Input Capacitance
550
825
C oes
C res
Output Capacitance
100
150
VGE=0V, VCE=25V, f=1M H z
Reverse Transfer Capacitance
12
18
IL
Self-Clamped
15.5
L=2.2m H, TC=25°C
9
Inductive Switching Current
11.5
L=4.7m H, TC=25°C
10
16.5
L=1.5m H, TC=150°C
13
7.5
L=4.7m H, TC=150°C
L=8.7m H, TC=150°C
14
pF
25
VGE=0V, VCE=25V, f=1M H z
VGE=0V, VCE=25V, f=1M H z
6
L=0.7m H, TC=25°C
A
6
o
TJ =150 C,
t SC
Short Circuit Withstand Time
120
µs
VCC = 16V, L = 10µH
14
R G = 1K ohm, VGE = 5V
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Page 2
11/19/04
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
Fig.1 - Typ. Output Characteristics
TJ=25°C
Fig.2 - Typ. Output Characteristics
TJ=125°C
60
60
VGE = 10 V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
50
50
40
IC (A)
40
30
I
C
(A)
VGE = 10 V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
20
10
10
0
0
0
1
2
3
4
5
6
0
1
VCE (V)
3
4
5
6
VCE (V)
Fig.3 - Transfer Characteristics
VCE=20V; tp=20µs
Fig.4 - Typical VCE vs TJ
VGE=4.5V
100
1.6
TJ = 25°C
TJ = 125°C
90
1.5
80
I C = 10A
70
1.4
60
V CE (V )
I CE (A )
2
50
40
1.3
1.2
30
20
1.1
I C = 7A
10
1.0
0
0
2
4
6
8
-50
10
50
100
150
200
TJ (°C)
VGE (V)
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0
Page 3
11/19/04
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
Fig.6 - Typ. Capacitance vs VCE
VGE=0V; VCE=25V; f=1MHz
Fig.5 - Typical VGE(th) vs TJ
IC=1mA
1000
2.2
C ies
Capacitance (pF)
2.0
V GE(t h) ( V )
1.8
1.6
1.4
100
C oes
10
C res
1.2
1.0
1
-50
0
50
100
150
200
1
10
TJ (°C)
VCE (V)
Fig.7 - Typ. Gate Charge vs V GE
I C=10A; VCE=12V; VGE =5V
Fig.8 - Typical VCE vs VGE
20
5.5
5.0
18
4.5
16
4.0
14
V CE (V )
3.5
V GE (V )
100
3.0
2.5
12
10
I C= 7A; 125°C
I C = 7A; 25°C
IC=10A; 125°C
I C=10A; 25°C
8
2.0
6
1.5
1.0
4
0.5
2
0.0
0
0
5
10
15
20
25
30
2.5
3.5
4
VGE (V)
QG, Total Gate Charge (nC)
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3
Page 4
11/19/04
4.5
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
Fig.10 - Self-clamp Avalance Current
vs Inductance @ 150°C
Fig.9 - Self-clamp Avalance Current vs
Inductance @ 25°C
20
Open -seco ndary Cu rren t (A)
Open-secondary Current (A)
40
35
30
Typical
25
20
15
Minimum
10
18
16
14
12
Typical
10
8
Minimum
6
4
0
1
2
3
4
5
0
Inductance (mH)
2
4
6
8
Inductance (mH)
10
Fig.11 - Transient Thermal Impedance, Junction-to-Case
Thermal Response(Z thJC)
10
1
D = 0.50
0.20
PDM
0.10
0.1
0.02
0.01
0.01
0.00001
t1
0.05
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
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Page 5
11/19/04
Ignition IGBT
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Fig.12 - Switching Waveform for Time Measurement
VGE= 5V; RG= 1KΩ; L= 1mH; VCE= 14V; used circuit in Fig.14
450
8
VClamp
400
7
V
6
300
5
Vcl (measured)
250
4
200
3
VGE
150
2
100
VGE (V)
clamp
(V)
350
1
t d (o f f )
50
0
0
-1
tr
-50
-14
-10
-6
-2
-2
2
6
10
14
t (µs)
Fig.13 - Self-clamped Inductive Switching Waveform
L=4.7mH; TC=25°C; used circuit in Fig.14
12
V clamp
CE
400
8
300
6
200
4
100
2
0
0
-2.E-05
-1.E-05
0.E+00
1.E-05
2.E-05
3.E-05
4.E-05
5.E-05
V clamp (V )
I
I
CE
(A)
10
500
-100
6.E-05
time
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Page 6
11/19/04
Ignition IGBT
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Fig.14 - Test Circuit
0.47 Ω
L
1KΩ
D.U.T.
Ice
Fig.15 - Gate Charge Circuit
L
VC C
DUT
0
1K
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Page 7
11/19/04
Ignition IGBT
D2Pak Package Outline
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530S WIT H
L OT CODE 8024
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB L Y L INE "L "
INT E R NAT IONAL
R E CT IF IE R
L OGO
Note: "P " in as s embly line
pos ition indicates "L ead-F ree"
P AR T NU MB E R
F 530S
AS S E MB L Y
L OT CODE
DAT E CODE
YE AR 0 = 2000
WE E K 02
L INE L
OR
INT E R N AT ION AL
R E CT IF IE R
L OGO
P AR T NU MB E R
F 530S
DAT E CODE
P = DE S IGNAT E S L E AD -F R E E
P R ODU CT (OP T ION AL )
YE AR 0 = 2000
WE E K 02
A = AS S E MB L Y S IT E COD E
AS S E MB L Y
L OT CODE
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Page 8
11/19/04
Ignition IGBT
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
E XAMPL E : T H IS IS AN IR L 3103L
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
INT E R NAT IONAL
R E CT IF IE R
L OGO
Note: "P" in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
L OT CODE
P AR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
OR
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
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Page 9
P AR T NU MB E R
DAT E CODE
P = DE S IGNAT E S L E AD-F R E E
P R ODU CT (OPT IONAL )
YE AR 7 = 1997
WE E K 19
A = AS S E MB L Y S IT E CODE
11/19/04
Ignition IGBT
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
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Page 10
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
11/19/04
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/04
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Page 11
11/19/04