HGT1S14N37G3VLS, HGTP14N37G3VL Data Sheet December 2001 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit. Formerly Developmental Type TA49169. Features • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC • Internal Series and Shunt Gate Resistors • Low Conduction Loss • Ignition Energy Capable Packaging Ordering Information PART NUMBER JEDEC TO-263AB PACKAGE BRAND HGT1S14N37G3VLS TO-263AB 14N37GVL HGTP14N37G3VL TO-220AB 14N37GVL COLLECTOR (FLANGE) G E NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e. HGT1S14N37G3VLS9A Symbol COLLECTOR JEDEC TO-220AB E R1 C G GATE R2 COLLECTOR (FLANGE) EMITTER Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B HGT1S14N37G3VLS, HGTP14N37G3VL Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGT1S14N37G3VLS, HGTP14N37G3VL UNITS Collector to Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER 380 V Emitter to Collector Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS 24 V Collector Current Continuous at VGE = 5V, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 25 A at VGE = 5V, TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . IC110 18 A Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±10 V Inductive Switching Current at L = 3mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS 15 A o C = 150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy at L = 3 mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.5 A 340 mJ at L = 3mH, T 136 W 0.91 W/oC Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG -55 to 175 oC Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ -55 to 175 oC Electrostatic Voltage HBM at 250pF, 1500Ω All Pin Configurations. . . . . . . . . . . . . . . . . . ESD 5 kV Electrostatic Voltage MM at 200pF, 0Ω All Pin Configurations. . . . . . . . . . . . . . . . . . . . . . ESD 2 kV Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. May be exceeded if IGEM is limited to 10mA. Electrical Specifications TJ = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Gate to Emitter Plateau Voltage Gate Charge Collector to Emitter Clamp Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current SYMBOL BVCER VGEP QG(ON) BVCE(CL) BVECS ICES TEST CONDITIONS MIN TYP MAX UNITS 320 350 380 V IC = 6.5A, VCE = 12V - 2.76 - V IC = 6.5A, VCE = 12V, VGE = 5V (Figure 16) - 27 - nC 320 350 380 V 24 28 - V - - 40 µA - - 250 µA - - 10 µA - - 75 µA - - 10 mA - - 50 mA - 1.3 1.45 V - 1.25 1.6 V - 1.45 1.75 V - 1.5 1.9 V - 1.6 2 V - 1.7 2.3 V IC = 10mA, RG = 1kΩ, VGE = 0V, TJ = -55oC to 175oC (Figure 16) IC = 15A, R G = 1kΩ IC = 10mA VCE = 300V, VGE = 0V (Figure 13) VCE = 250V, VGE = 0V (Figure 13) Emitter to Collector Leakage Current Collector to Emitter On-State Voltage IECS VCE(ON) VEC = -24V, VGE = 0V (Figure 13) IC = 6A, VGE = 4.0V (Figures 3 through 9) IC = 10A, VGE = 4.5V (Figures 3 through 9) IC = 14A, VGE = 5V (Figures 3 through 9) Gate to Emitter Threshold Voltage VGE(TH) TJ = 25oC TJ = 175oC TJ = 25oC TJ = 175oC TJ = 25oC TJ = 175oC TJ = -55oC TJ = 25oC TJ = 25oC TJ = 175oC TJ = 25oC TJ = 175oC 1.3 1.8 2.2 V Gate Series Resistance R1 - 70 150 Ω Gate to Emitter Resistance R2 10 18 26 kΩ ±310 ±500 ±1000 µA Gate to Emitter Leakage Current ©2001 Fairchild Semiconductor Corporation IGES IC = 1mA, V CE = VGE (Figure 12) VGE = ±10V HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B HGT1S14N37G3VLS, HGTP14N37G3VL Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ±12 ±14 - V Gate to Emitter Breakdown Voltage BVGES IGES = ±2mA Current Turn-On Delay Time Resistive Load td(ON)I IC = 6.5A, RG = 1kΩ, VGE = 5V, RL = 2.1Ω, VDD = 14V, TJ = 150oC (Figure 14) - 1 4 µs Current Turn-On Rise Time Resistive Load trI IC = 6.5A, RG = 1kΩ VGE = 5V, RL = 2.1Ω VDD = 14V, TJ = 150oC (Figure 14) - 3 7 µs - 10 30 µs TC = 150oC 11.5 - - A TC = 25oC 15 - - A - - 1.1 oC/W Current Turn-Off Time Inductive Load td(OFF)I + tfI IC = 6.5A, RG = 1kΩ VGE = 5V, L = 300µH VDD = 300V, TJ = 150oC (Figure 14) Inductive Use Test ISCIS Thermal Resistance RθJC (Figure 18) Unless Otherwise Specified 60 RG = 1kΩ, VGE = 5V 52 44 ISCIS CAN BE LIMITED BY gfs at VGE = 5V 36 28 TJ = 25oC 20 12 4 40 TJ = 150oC 80 120 160 200 ISCIS, INDUCTIVE SWITCHING CURRENT (A) Typical Performance Curves ISCIS , INDUCTIVE SWITCHING CURRENT (A) L = 3mH, VG = 5V, RG = 1kΩ (Figures 1 and 2) 56 RG = 1kΩ, VGE = 5V 48 ISCIS CAN BE LIMITED BY gfs at VGE = 5V 40 32 24 TJ = 25oC 16 TJ = 150oC 8 0 0 tAV, TIME IN AVALANCHE (ms) 1.24 1.20 VGE = 4.0V 1.12 VGE = 4.5V VGE = 5.0V 1.00 -50 25 100 175 TJ, JUNCTION TEMPERATURE (oC) FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs JUNCTION TEMPERARURE ©2001 Fairchild Semiconductor Corporation VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) ICE = 6A 1.04 6 8 10 FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs INDUCTANCE 1.28 1.08 4 L, INDUCTANCE (mH) FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs TIME IN AVALANCHE 1.16 2 1.50 ICE = 10A 1.46 VGE = 4.0V 1.42 1.38 VGE = 4.5V 1.34 VGE = 5.0V 1.30 -50 25 100 175 TJ, JUNCTION TEMPERATURE (oC) FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs JUNCTION TEMPERATURE HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B HGT1S14N37G3VLS, HGTP14N37G3VL 45 DUTY CYCLE < 0.5%, TJ = 175oC PULSE DURATION = 250µs Unless Otherwise Specified (Continued) VGE = 5.0V VGE = 4.5V 30 VGE = 4.0V 15 0 0 1 2 3 4 5 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 45 DUTY CYCLE < 0.5%, TJ = 150oC PULSE DURATION = 250µs VGE = 4.5V 30 VGE = 4.0V 15 0 0 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VGE = 5.0V 50 VGE = 4.5V 40 VGE = 4.0V 30 20 10 0 1 0 2 3 4 5 70 4.5V 4.0V 3.5V 30 3.0V 2.5V 20 10 0 0 1 2 3 4 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 9. COLLECTOR TO EMITTER ON-STATE VOLTAGE ©2001 Fairchild Semiconductor Corporation 5 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC 5.0V 40 5 VGE = 5.0V VGE = 4.5V 50 40 VGE = 4.0V 30 20 10 0 0 1 2 3 4 5 FIGURE 8. COLLECTOR TO EMITTER ON-STATE VOLTAGE 8.0V 50 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 7. COLLECTOR TO EMITTER ON-STATE VOLTAGE VGE 3 DUTY CYCLE < 0.5%, TJ = -40oC PULSE DURATION = 250µs 60 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 60 2 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250µs 1 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 60 VGE = 5.0V 40 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250µs 32 TJ = 150oC 24 16 TJ = 25oC 8 TJ = -40oC 0 1 2 3 4 5 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 10. TRANSFER CHARACTERISTIC HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B HGT1S14N37G3VLS, HGTP14N37G3VL Typical Performance Curves Unless Otherwise Specified (Continued) 2.0 VGE = 5V VGE(TH) , THRESHOLD VOLTAGE (V) ICE , DC COLLECTOR CURRENT (A) 28 24 20 16 12 8 4 0 25 50 75 100 125 150 ICE = 1mA VCE = VGE 1.8 1.6 1.4 1.2 1.0 0.8 -50 175 25 TC , CASE TEMPERATURE (oC) 100 175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 11. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 10000 16 1000 RESISTIVE tOFF SWITCHING TIME (µs) LEAKAGE CURRENTS (µA) ICE = 6.5A, VGE = 5V, RG = 1kΩ 14 VECS = 24V 100 VCES = 300V 10 VCES = 250V 1 12 INDUCTIVE tOFF 10 8 6 RESISTIVE tON 4 0.1 25 50 75 125 100 150 2 175 25 50 TJ, JUNCTION TEMPERATURE (oC) FIGURE 13. LEAKAGE CURRENT vs JUNCTION TEMPERATURE VGE , GATE TO EMITTER VOLTAGE (V) 8 FREQUENCY = 1MHz C, CAPACITANCE (pF) 2000 1600 CIES 1200 CRES 400 0 COES 0 5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ©2001 Fairchild Semiconductor Corporation 100 125 150 175 FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE 2400 800 75 TJ , JUNCTION TEMPERATURE (oC) 25 IG(REF) = 1mA, RL = 1.865Ω, TJ = 25oC 6 VCE = 12V 4 2 VCE = 6V 0 0 8 16 24 32 40 48 56 QG, GATE CHARGE (nC) FIGURE 16. GATE CHARGE WAVEFORMS HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B HGT1S14N37G3VLS, HGTP14N37G3VL Typical Performance Curves Unless Otherwise Specified (Continued) BVCER , BREAKDOWN VOLTAGE (V) 360 TJ (oC) ICER = 10mA -55 350 25 150 175 340 330 320 0 2 4 6 8 10 RG , GATE SERIES RESISTANCE (kΩ) ZθJC , NORMALIZED THERMAL RESPONSE FIGURE 17. BREAKDOWN VOLTAGE vs SERIES GATE RESISTANCE 100 0.5 0.2 0.1 10-1 0.05 0.02 0.01 10-2 t1 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-5 10-4 10-3 10-2 PD t2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 18. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuits R or L 3mH VDD C C PULSE GEN LOAD RG = 1kΩ RG G DUT DUT G FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation - 5V E + VDD E FIGURE 20. tON AND tOFF SWITCHING TEST CIRCUIT HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B