SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS(on) @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current Ordering Code Q67040-S4133 Q67040-S4127-A2 Value A ID T C = 25 °C 2 T C = 100 °C 1.3 Pulsed drain current IDpulse Unit 8 T C = 25 °C Avalanche energy, single pulse EAS 135 mJ Gate source voltage VGS ±20 V Power dissipation Ptot 55 W °C I D = 2 A, VDD = 50 V, R GS = 25 Ω, T j = 25 °C T C = 25 °C Operating temperature Tj -55 ... +150 Storage temperature T stg -55 ... +150 IEC climatic category; DIN IEC 68-1 Semiconductor Group 55/150/56 1 10 / 1998 SPD02N60 SPU02N60 Preliminary data Electrical Characteristics Symbol Parameter Values min. at Tj = 25 °C, unless otherwise specified typ. Unit max. Thermal Characteristics Thermal resistance, junction - case RthJC - Thermal resistance, junction - ambient RthJA - 100 - SMD version, device on PCB: RthJA @ min. footprint - 50 - @ 6 cm 2 cooling area1) - tbd - V(BR)DSS 600 - - Gate threshold voltage, VGS = VDS I D = 1 mA VGS(th) 2.1 3 4 Zero gate voltage drain current I DSS 2.25 K/W Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = 0.25 mA µA VDS = 600 V, VGS = 0 V, T j = 25 °C - 0.1 1 VDS = 600 V, VGS = 0 V, T j = 150 °C - - 100 I GSS - 10 100 nA RDS(on) - 4.2 5.5 Ω Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, I D = 1.3 A 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 10 / 1998 SPD02N60 SPU02N60 Preliminary data Electrical Characteristics Parameter Symbol Values Unit min. typ. max. gfs 1 1.8 - S Ciss - 350 460 pF Coss - 40 60 Crss - 15 22 td(on) - 10 15 tr - 25 40 td(off) - 35 50 tf - 25 35 at Tj = 25 °C, unless otherwise specified Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 1.3 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 10 V, ID = 1.5 A, RG = 50 Ω Rise time VDD = 30 V, VGS = 10 V, ID = 1.5 A, RG = 50 Ω Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 1.5 A, RG = 50 Ω Fall time VDD = 30 V, VGS = 10 V, ID = 1.5 A, RG = 50 Ω Semiconductor Group 3 10 / 1998 SPD02N60 SPU02N60 Preliminary data Electrical Characteristics Parameter Symbol Values Unit min. typ. max. IS - - 2 ISM - - 8 VSD - 0.85 1.4 V trr - 300 450 ns Qrr - 2.3 3.45 µC at Tj = 25 °C, unless otherwise specified Reverse Diode Inverse diode continuous forward current A TC = 25 °C Inverse diode direct current,pulsed TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 4 A Reverse recovery time VR = 100 V, IF =IS , diF/dt = 100 A/µs Reverse recovery charge VR = 100 V, IF =lS , diF/dt = 100 A/µs Semiconductor Group 4 10 / 1998 SPD02N60 SPU02N60 Preliminary data Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ≥ 10 V SPD02N60 SPD02N60 60 2.4 A 50 2.0 45 1.8 40 1.6 ID Ptot W 35 1.4 30 1.2 25 1.0 20 0.8 15 0.6 10 0.4 5 0.2 0 0 20 40 60 80 100 120 °C 0.0 0 160 TC Safe operating area 20 40 60 ZthJC = f(tp) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 1 100 120 °C 10 1 tp = 30.0µs 160 Tj Transient thermal impedance ID = f ( V DS ) SPD02N60 80 SPD02N60 K/W 100 µs A /I D 10 0 R DS ( on ) ID = V ZthJC 1 ms DS 10 0 10 -1 10 ms D = 0.50 0.20 10 -1 0.10 DC 0.05 10 -2 0.02 0.01 single pulse 10 -2 0 10 10 1 10 2 V 10 10 -3 -7 10 3 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 10 / 1998 SPD02N60 SPU02N60 Preliminary data Typ. output characteristics Drain-source on-resistance ID = f (VDS) RDS(on) = f (Tj ) parameter: tp = 80 µs parameter : ID = 1.3 A, VGS = 10 V SPD02N60 SPD02N60 26 Ptot = 55W A Ω l kj i h g VGS [V] a f 4.0 e ID 3.5 3.0 d 2.5 2.0 1.5 c 22 4.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0 20 RDS(on) 5.0 18 16 14 12 10 98% 8 typ 6 1.0 4 b 0.5 2 a 0.0 0 10 20 30 40 V 0 -60 60 VDS Semiconductor Group -20 20 60 100 °C 180 Tj 6 10 / 1998 SPD02N60 SPU02N60 Preliminary data Typ. transfer characteristics I D= f ( VGS ) Gate threshold voltage parameter: tp = 80 µs VGS(th) = f (Tj) VDS≥ 2 x ID x RDS(on)max parameter : VGS = VDS ,ID = 1 mA 4.0 5.2 V A 4.4 4.0 VGS(th) ID 3.0 2.5 3.6 3.2 max 2.8 2.0 2.4 2.0 1.5 typ 1.6 1.0 1.2 min 0.8 0.5 0.4 0.0 0.0 1.0 2.0 3.0 V 4.0 0.0 -60 6.0 -20 20 60 V 100 VGS 160 Tj Typ. capacitances Forward characteristics of reverse diode C = f(VDS) IF = f (VSD ) Parameter: VGS=0 V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 1 SPD02N60 pF A 10 3 10 0 C IF Ciss 10 2 Coss 10 -1 Tj = 25 °C typ Crss 10 1 Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 15 20 25 30 V 10 -2 0.0 40 VDS Semiconductor Group 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 10 / 1998 SPD02N60 SPU02N60 Preliminary data Avalanche Energy EAS = f (Tj) Drain-source breakdown voltage parameter: ID = 2 A,VDD = 50 V V(BR)DSS = f (Tj) RGS = 25 Ω SPD02N60 140 720 mJ V 120 V(BR)DSS 110 EAS 100 90 80 680 660 640 70 620 60 50 600 40 30 580 20 560 10 0 20 40 60 80 100 120 °C 540 -60 160 Tj Semiconductor Group -20 20 60 100 °C 180 Tj 8 10 / 1998 Preliminary data SPD02N60 SPU02N60 Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. 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Semiconductor Group 9 10 / 1998