INFINEON IKP03N120H2

IKP03N120H2
IKW03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
•
•
•
•
•
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
G
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
PG-TO-247-3
PG-TO-220-3-1
Qualified according to JEDEC2 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
E
VCE
IC
Eoff
Tj
Marking
Package
IKW03N120H2
1200V
3A
0.15mJ
150°C
K03H1202
PG-TO-247-3
IKP03N120H2
1200V
3A
0.15mJ
150°C
K03H1202
PG-TO-220-3-1
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
Triangular collector current
IC
Maximum Ratings
A
TC = 25°C, f = 140kHz
9.6
TC = 100°C, f = 140kHz
3.9
Pulsed collector current, tp limited by Tjmax
ICpuls
9.9
Turn off safe operating area
-
9.9
VCE ≤ 1200V, Tj ≤ 150°C
Diode forward current
IF
TC = 25°C
9.6
TC = 100°C
3.9
Gate-emitter voltage
VGE
±20
V
Power dissipation
Ptot
62.5
W
-40...+150
°C
TC = 25°C
Operating junction and storage temperature
Tj , Tstg
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
2
260
J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.5 Sept. 08
IKP03N120H2
IKW03N120H2
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
2.0
K/W
RthJCD
3.2
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction - case
Thermal resistance,
RthJA
junction – ambient
P-TO-220-3-1
P-TO-247-3-21
62
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
1200
-
-
T j = 25°C
-
2.2
2.8
T j = 150 °C
-
2.5
-
V G E = 10 V, I C = 3 A ,
T j = 25°C
-
2.4
-
T j = 25°C
-
2.0
2.5
T j = 150 °C
-
1.75
-
2.1
3
3.9
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0 V , I C =300 µA
Collector-emitter saturation voltage
VCE(sat)
Diode forward voltage
VF
V
V G E = 15 V, I C = 3 A
VGE = 0, IF=2A
Gate-emitter threshold voltage
VGE(th)
I C = 9 0 µA,V C E = V G E
Zero gate voltage collector current
ICES
V C E = 12 00 V, V G E = 0 V
µA
T j = 25°C
-
-
20
T j = 150 °C
-
-
80
Gate-emitter leakage current
IGES
V C E = 0 V , V G E =20V
-
-
100
nA
Transconductance
gfs
V C E =20V, I C = 3 A
-
2
-
S
Input capacitance
Ciss
V C E =25V,
-
205
-
pF
Output capacitance
Coss
VGE=0V,
-
24
-
Reverse transfer capacitance
Crss
f=1MHz
-
7
-
Gate charge
QGate
V C C = 96 0 V, I C = 3 A
-
22
-
nC
PG- TO- 220- 3-1
-
7
-
nH
PG-TO-247-3-21
-
13
-
Dynamic Characteristic
V G E =15V
Internal emitter inductance
measured 5mm (0.197 in.) from case
Power Semiconductors
LE
2
Rev. 2.5 Sept. 08
IKP03N120H2
IKW03N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
9.2
-
-
5.2
-
-
281
-
-
29
-
-
0.14
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
ns
-
0.15
-
Ets
T j = 25°C ,
V C C = 80 0 V, I C = 3 A ,
V G E =15V/0V,
R G = 8 2Ω ,
L σ 2 ) =1 80nH,
C σ 2 ) =40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
-
0.29
-
Diode reverse recovery time
trr
T j = 25°C ,
-
42
-
ns
Diode reverse recovery charge
Qrr
V R = 80 0 V , I F = 3 A ,
-
0.23
-
µC
Diode peak reverse recovery current
Irrm
R G = 8 2Ω
-
10.3
-
A
Diode current slope
d i F /d t
-
993
-
A/µs
Diode peak rate of fall of reverse
recovery current during t b
dirr/dt
-
1180
-
mJ
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
9.4
-
-
6.7
-
-
340
-
-
63
-
-
0.22
-
-
0.26
-
-
0.48
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j = 150 °C
V C C = 80 0 V,
IC=3A,
V G E =15V/0V,
R G = 8 2Ω ,
L σ 2 ) =1 80nH,
C σ 2 ) =40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
T j = 150 °C
-
125
-
ns
Diode reverse recovery charge
Qrr
V R = 80 0 V , I F = 3 A ,
-
0.51
-
µC
Diode peak reverse recovery current
Irrm
R G = 8 2Ω
-
12
-
A
Diode current slope
d i F /d t
-
829
-
A/µs
Diode peak rate of fall of reverse
recovery current during t b
dirr/dt
-
540
-
2)
3)
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E
Commutation diode from device IKP03N120H2
Power Semiconductors
3
Rev. 2.5 Sept. 08
IKP03N120H2
IKW03N120H2
Switching Energy ZVT, Inductive Load
Parameter
Symbol
Conditions
Value
min.
typ.
max.
Unit
IGBT Characteristic
Turn-off energy
Eoff
mJ
V C C = 80 0 V,
IC=3A,
V G E =15V/0V,
R G = 8 2Ω ,
C r 2 ) = 4n F
Power Semiconductors
T j = 25°C
-
0.05
-
T j = 150 °C
-
0.09
-
4
Rev. 2.5 Sept. 08
IKP03N120H2
IKW03N120H2
Ic
12A
t p =1 µs
10A
5 µs
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A
8A
TC=80°C
6A
TC=110°C
4A
2A
0A
10Hz
Ic
100Hz
10 µs
1A
50 µs
100 µs
0,1A
500 µs
DC
1kHz
10kHz
0,01A
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 82Ω)
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
12A
60W
10A
IC, COLLECTOR CURRENT
Ptot,
POWER DISSIPATION
50W
40W
30W
20W
10W
0W
25°C
50°C
75°C
100°C
6A
4A
2A
0A
25°C
125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
Power Semiconductors
8A
50°C
75°C
100°C
125°C
150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
5
Rev. 2.5 Sept. 08
IKP03N120H2
IKW03N120H2
10A
10A
9A
8A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
8A
VGE=15V
6A
12V
10V
8V
6V
4A
2A
7A
6A
5A
VGE=15V
12V
10V
8V
6V
4A
3A
2A
1A
0A
0V
1V
2V
3V
4V
0A
0V
5V
12A
IC, COLLECTOR CURRENT
10A
8A
6A
Tj=+150°C
Tj=+25°C
4A
2A
0A
3V
5V
7V
9V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
Power Semiconductors
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
1V
3V
IC=6A
IC=3A
2V
IC=1.5A
1V
0V
-50°C
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
6
Rev. 2.5 Sept. 08
IKP03N120H2
IKW03N120H2
1000ns
1000ns
td(off)
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
td(off)
tf
td(on)
10ns
100ns
tf
td(on)
10ns
tr
tr
1ns
0A
2A
1ns
4A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82Ω,
dynamic test circuit in Fig.E)
100ns
tf
td(on)
tr
50°C
75°C
100°C
125°C
150°C
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
t, SWITCHING TIMES
100Ω
150Ω
5V
td(off)
1ns
25°C
50Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E)
1000ns
10ns
0Ω
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82Ω,
dynamic test circuit in Fig.E)
Power Semiconductors
4V
max.
3V
typ.
2V
min.
1V
0V
-50°C
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.09mA)
7
Rev. 2.5 Sept. 08
IKP03N120H2
IKW03N120H2
1.0mJ
1
1
Ets
0.7mJ
1
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
) Eon and Ets include losses
due to diode recovery.
Eoff
0.5mJ
1
Eon
0A
2A
0.4mJ
0.3mJ
0.5mJ
1
E, SWITCHING ENERGY LOSSES
) Eon and Ets include losses
due to diode recovery.
Ets
1
0.4mJ
0.3mJ
Eoff
1
Eon
0.2mJ
0.1mJ
25°C
80°C
125°C
150°C
1
Eon
50Ω
100Ω
150Ω
200Ω
250Ω
IC=3A, TJ=150°C
0.16mJ
0.12mJ
IC=3A, TJ=25°C
0.08mJ
IC=1A, TJ=150°C
0.04mJ
IC=1A, TJ=25°C
0.00mJ
0V/us
1000V/us
2000V/us
3000V/us
dv/dt, VOLTAGE SLOPE
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82Ω,
dynamic test circuit in Fig.E )
Power Semiconductors
Eoff
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E )
Eoff, TURN OFF SWITCHING ENERGY LOSS
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82Ω,
dynamic test circuit in Fig.E )
1
0.5mJ
0Ω
4A
Ets
0.6mJ
0.2mJ
0.0mJ
) Eon and Ets include losses
due to diode recovery.
Figure 16. Typical turn off switching energy
loss for soft switching
(dynamic test circuit in Fig. E)
8
Rev. 2.5 Sept. 08
IKP03N120H2
IKW03N120H2
20V
D=0.5
0
VGE, GATE-EMITTER VOLTAGE
VGE, GATE-EMITTER VOLTAGE
10 K/W
0.2
0.1
0.05
-1
10 K/W
R,(K/W)
1.082517
0.328671
0.588811
0.02
0.01
τ, (s)
0.000795
0.000179
0.004631
R1
R2
-2
10 K/W
single pulse
1µs
10µs
C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
100µs
1ms
10ms
15V
UCE=240V
10V
UCE=960V
5V
0V
0nC
100ms
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 3A)
10nC
20nC
30nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 3A)
1000V
1nF
100pF
Coss
10pF
Crss
800V
2A
600V
400V
1A
200V
0A
0V
0V
10V
20V
0.0
30V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
Power Semiconductors
ICE COLLECTOR CURRENT
C, CAPACITANCE
Ciss
VCE, COLLECTOR-EMITTER VOLTAGE
3A
0.2
0.4
0.6
0.8
1.0
1.2
tp, PULSE WIDTH
Figure 20. Typical turn off behavior, hard
switching
(VGE=15/0V, RG=82Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
9
Rev. 2.5 Sept. 08
IKP03N120H2
IKW03N120H2
400V
1A
200V
0A
0V
0.0
0.4
0.8
1.2
1.6
2.0
2.4
ZthJC, TRANSIENT THERMAL RESISTANCE
VGE, GATE-EMITTER VOLTAGE
2A
600V
ICE COLLECTOR CURRENT
3A
800V
2.8
tp, PULSE WIDTH
0.2
0.1
0.05
0.02
-1
10 K/W
0.01
R,(K/W)
1.9222
0.5852
0.7168
τ, (s)
7.04E-04
2.02E-04
4.39E-03
single pulse R 1
R2
C 1 = τ 1 /R 1
C2=τ 2/R 2
1ms
10ms
-2
10 K/W
10µs
100µs
0.6uC
180ns
Qrr, REVERSE RECOVERY CHARGE
160ns
trr, REVERSE RECOVERY TIME
0
10 K/W
tP, PULSE WIDTH
Figure 22. Diode transient thermal
impedance as a function of pulse width
(D=tP/T)
Figure 21. Typical turn off behavior, soft
switching
(VGE=15/0V, RG=82Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
TJ=150°C
140ns
120ns
100ns
80ns
60ns
TJ=25°C
40ns
0Ohm
D=0.5
100Ohm
200Ohm
0.5uC
0.4uC
0.3uC
TJ=25°C
0.2uC
0Ohm
300Ohm
RG, GATE RESISTANCE
Figure 23. Typical reverse recovery time
as a function of diode current slope
VR=800V, IF=3A,
Dynamic test circuit in Figure E)
Power Semiconductors
TJ=150°C
100Ohm
200Ohm
300Ohm
RG, GATE RESISTANCE
Figure 24. Typical reverse recovery
charge as a function of diode current
slope
(VR=800V, IF=3A,
Dynamic test circuit in Figure E)
10
Rev. 2.5 Sept. 08
IKP03N120H2
IKW03N120H2
16A
dirr/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
14A
12A
T J =150°C
10A
T J =25°C
Irr,
REVERSE RECOVERY CURRENT
-600A/us
8A
0O hm
100O hm
200O hm
TJ=150°C
-800A/us
-1000A/us
-1200A/us
TJ=25°C
-1400A/us
-1600A/us
-1800A/us
0Ohm
300O hm
RG, GATE RESISTANCE
Figure 25. Typical reverse recovery
current as a function of diode current
slope
(VR=800V, IF=3A,
Dynamic test circuit in Figure E)
100Ohm
200Ohm
300Ohm
RG, GATE RESISTANCE
Figure 26. Typical diode peak rate of fall
of reverse recovery current as a
function of diode current slope
(VR=800V, IF=3A,
Dynamic test circuit in Figure E)
3.0V
IF=4A
T J =150°C
2.5V
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
4A
2A
T J =25°C
0A
0V
IF=2A
IF=1A
2.0V
1.5V
1.0V
1V
2V
-50°C
3V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current
as a function of forward voltage
Power Semiconductors
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward
voltage as a function of junction
temperature
11
Rev. 2.5 Sept. 08
IKP03N120H2
IKW03N120H2
PG-TO220-3-1
Power Semiconductors
12
Rev. 2.5 Sept. 08
IKP03N120H2
IKW03N120H2
PG-TO247-3
M
M
MAX
5.16
2.53
2.11
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.35
16.03
14.15
5.10
2.60
MIN
4.90
2.27
1.85
1.07
1.90
1.90
2.87
2.87
0.55
20.82
16.25
1.05
15.70
13.10
3.68
1.68
MIN
0.193
0.089
0.073
0.042
0.075
0.075
0.113
0.113
0.022
0.820
0.640
0.041
0.618
0.516
0.145
0.066
5.44
3
19.80
4.17
3.50
5.49
6.04
Power Semiconductors
MAX
0.203
0.099
0.083
0.052
0.095
0.085
0.133
0.123
0.027
0.831
0.695
0.053
0.631
0.557
0.201
0.102
Z8B00003327
0
0
5 5
7.5mm
0.214
3
20.31
4.47
3.70
6.00
6.30
0.780
0.164
0.138
0.216
0.238
13
0.799
0.176
0.146
0.236
0.248
17-12-2007
03
Rev. 2.5 Sept. 08
IKP03N120H2
IKW03N120H2
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
IF
tS
QS
Ir r m
tr r
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
τn
r2
rn
Tj (t)
p(t)
r2
r1
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
½ Lσ
öö
DUT
(Diode)
L
Cσ
Cr
VDC
RG
DUT
(IGBT)
½ Lσ
Figure E. Dynamic test circuit
Leakage inductance Lσ = 180nH,
Stray capacitor Cσ = 40pF,
Relief capacitor Cr = 4nF (only for
ZVT switching)
Figure B. Definition of switching losses
Power Semiconductors
14
Rev. 2.5 Sept. 08
IKP03N120H2
IKW03N120H2
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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persons may be endangered.
Power Semiconductors
15
Rev. 2.5 Sept. 08