SKB15N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • PG-TO263-3-2 High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKB15N60HS VCE IC Eoff Tj Marking Package 600V 15A 200µJ 150°C K15N60HS PG-TO263-3-2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current IC Value Unit 600 V A TC = 25°C 27 TC = 100°C 15 Pulsed collector current, tp limited by Tjmax ICpul s 60 Turn off safe operating area - 60 VCE ≤ 600V, Tj ≤ 150°C IF Diode forward current TC = 25°C 40 TC = 100°C 20 Diode pulsed current, tp limited by Tjmax IFpul s 80 Gate-emitter voltage static transient (tp<1µs, D<0.05) VGE ±20 ±30 V tSC 10 µs Ptot 138 W Operating junction and storage temperature Tj , Tstg -55...+150 °C Time limited operating junction temperature for t < 150h Tj(tl) 175 Soldering temperature (reflow soldering, MSL1) - 245 2) Short circuit withstand time VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev 2.3 Oct. 07 SKB15N60HS Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.9 K/W RthJCD 1.7 RthJA 62 RthJA 40 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient 1) SMD version, device on PCB Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 °C 2.8 3.15 T j =1 5 0° C 3.5 4.00 1.5 2.0 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µA Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15 V , I C = 15 A V G E = 0V , I F = 1 5 A T j =2 5 °C T j =1 5 0° C - 1.5 2.0 3 4 5 Gate-emitter threshold voltage VGE(th) I C = 40 0 µA , V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V, V G E = 0 V µA T j =2 5 °C - - 40 T j =1 5 0° C - - 2000 100 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - Transconductance gfs V C E = 20 V , I C = 15 A - 10 1) nA S 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. Power Semiconductors 2 Rev 2.3 Oct. 07 SKB15N60HS Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 810 Output capacitance Coss V G E = 0V , - 123 Reverse transfer capacitance Crss f= 1 MH z - 51 Gate charge QGate V C C = 48 0 V, I C =1 5 A - 80 nC - 7 nH - 135 pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) IC(SC) V G E = 15 V ,t S C ≤ 10 µs V C C ≤ 4 0 0 V, T j ≤ 1 5 0° C A Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. - 13 - 14 - 209 - 15 - 0.32 - 0.21 - 0.53 max. Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 °C , V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , R G = 23 Ω 2) L σ = 60 n H, 2) C σ = 40 pF Energy losses include “tail” and diode reverse recovery. trr T j =2 5 °C , - 111 tS V R = 4 00 V , I F = 1 5 A, - 27 tF d i F / d t =9 8 0 A/ µs - 83 ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time ns Diode reverse recovery charge Qrr - 580 nC Diode peak reverse recovery current Irrm - 14 A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 520 A/µs 1) 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L σ a nd Stray capacity C σ due to test circuit in Figure E. Power Semiconductors 3 Rev 2.3 Oct. 07 SKB15N60HS Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. - 11 max. Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =1 5 0° C V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , R G = 2 3Ω 1) L σ = 60 n H, 1) C σ = 40 pF Energy losses include “tail” and diode reverse recovery. trr T j =1 5 0° C V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , R G = 3 .6 Ω 1) L σ = 60 n H, 1) C σ = 40 pF Energy losses include “tail” and diode reverse recovery. - 6 - 72 - 26 - 0.38 - 0.20 - 0.58 - 12 - 15 - 235 - 17 - 0.48 - 0.30 - 0.78 ns mJ ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time T j =1 5 0° C - 184 tS V R = 4 00 V , I F = 1 5 A, - 30 tF d i F / d t =1 0 70 A / µs - 155 ns Diode reverse recovery charge Qrr - 1320 Diode peak reverse recovery current Irrm - 18 A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 360 A/µs 1) nC Leakage inductance L σ a nd Stray capacity C σ due to test circuit in Figure E. Power Semiconductors 4 Rev 2.3 Oct. 07 SKB15N60HS tP=5µs 8µs TC=80°C 50A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 60A 40A TC=110°C 30A 20A Ic 10A Ic 0A 10Hz 100Hz 1kHz 15µs 10A 50µs 200µs 1A 1ms DC 10kHz 0,1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 23Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤150°C;VGE=15V) 140W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 120W 100W 80W 60W 40W 20A 10A 20W 0W 25°C 50°C 75°C 100°C 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 5 Rev 2.3 Oct. 07 SKB15N60HS 40A 40A VGE=20V VGE=20V 15V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 15V 13V 30A 11V 9V 7V 20A 5V 10A 0A 0V 2V 4V IC, COLLECTOR CURRENT 150°C 20A 2V 4V 6V 8V 5V 10A 2V 4V 6V 5,5V 5,0V IC=30A 4,5V 4,0V 3,5V IC=15A 3,0V 2,5V IC=7.5A 2,0V 1,5V 1,0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V) Power Semiconductors 7V 20A VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE 25°C 0V 9V 0V T J=-55°C 0A 11V 0A 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) 40A 13V 30A 6 Rev 2.3 Oct. 07 SKB15N60HS td(off) tf t, SWITCHING TIMES t, SWITCHING TIMES 100ns td(on) 10ns tr 100 ns td(off) tf td(on) 10 ns tr 1ns 0A 10A 1 ns 20A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, RG=23Ω, Dynamic test circuit in Figure E) 0Ω 10Ω 20Ω 30Ω 40Ω 50Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E) 100ns tf 10ns tr td(on) 0°C 50°C 100°C VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES td(off) 4.5V max. 4.0V 3.5V typ. 3.0V 2.5V min. 2.0V 1.5V -50°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=15A, RG=23Ω, Dynamic test circuit in Figure E) Power Semiconductors 5.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.5mA) 7 Rev 2.3 Oct. 07 SKB15N60HS *) Eon include losses due to diode recovery 2,0mJ Ets* Eon* 1,0mJ Eoff 0,0mJ 0A 10A 20A E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon include losses due to diode recovery Eon* 0,5 mJ Eoff 0,0 mJ 0.75mJ Ets* Eon* 0.25mJ Eoff 0Ω 10Ω 20Ω 30Ω 40Ω 50Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE E, SWITCHING ENERGY LOSSES *) Eon include losses due to diode recovery 0.00mJ 0°C 1,0 mJ 30A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, RG=23Ω, Dynamic test circuit in Figure E) 0.50mJ Ets* 0 10 K/W D=0.5 0.2 -1 10 K/W 0.1 0.05 R,(1/W) 0.5321 0.2047 0.1304 0.0027 0.02 -2 10 K/W 0.01 τ, (s) 0.04968 2.58*10-3 2.54*10-4 3.06*10-4 R1 R2 -3 10 K/W single pulse C 1 = τ 1 / R 1 C 2 = τ 2 /R 2 -4 50°C 100°C 10 K/W 1µs 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=20A, RG=23Ω, Dynamic test circuit in Figure E) Power Semiconductors 10µs 100µs 1m s 10m s 100m s 1s tP, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = tp / T) 8 Rev 2.3 Oct. 07 480V 120V 10V Coss 100pF Crss 5V 0V 0nC 20nC 40nC 60nC 80nC 10pF 100nC 15µs 10µs 5µs 0µs 10V 11V 12V 13V 10V 20V 250A 200A 150A 100A 50A 0A 14V VGE, GATE-EMITETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C) Power Semiconductors 0V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) IC(sc), short circuit COLLECTOR CURRENT QGE, GATE CHARGE Figure 17. Typical gate charge (IC=15 A) tSC, SHORT CIRCUIT WITHSTAND TIME Ciss 1nF 15V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE SKB15N60HS 10V 12V 14V 16V 18V VGE, GATE-EMITETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 400V, Tj ≤ 150°C) 9 Rev 2.3 Oct. 07 SKB15N60HS 300ns IF=30A 200ns IF=15A Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 400ns IF=30A 1,5µC IF=15A 1,0µC IF=7.5A 0,5µC IF=7.5A 100ns 200A/µs 0,0µC 400A/µs 600A/µs 200A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR=400V, TJ=150°C, Dynamic test circuit in Figure E) IF=7.5A 10A 5A 200A/µs 400A/µs 600A/µs 800A/µs -300A/µs -200A/µs -100A/µs -0A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR=400V, TJ=150°C, Dynamic test circuit in Figure E) Power Semiconductors 800A/µs IF=15A 15A 0A 600A/µs diF/dt, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR=400V, TJ=150°C, Dynamic test circuit in Figure E) dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT IF=30A 400A/µs 200A/µs 400A/µs 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, TJ=150°C, Dynamic test circuit in Figure E) 10 Rev 2.3 Oct. 07 SKB15N60HS 2.0V VF, FORWARD VOLTAGE IF, FORWARD CURRENT TJ=-55°C 25°C 150°C 20A 10A 1.8V IF=30A 1.6V 1.4V IF=15A 1.2V IF=7.5A 0A 0,0V 0,5V 1,0V 1.0V -50°C 1,5V ZthJC, TRANSIENT THERMAL RESISTANCE VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage 0 K/W 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature D=0.5 0.2 R,(1/W) 0.311 0.271 0.221 0.584 0.314 0.1 0.05 1 K/W 0.02 τ, (s) 7.83*10-2 1.21*10-2 1.36*10-3 1.53*10-4 2.50*10-5 R1 R2 0.01 single pulse 2 K/W 1µs 10µs 100µs C 1= τ1/R 1 1m s C 2 = τ 2 /R 2 10m s 100m s tP, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D=tP/T) Power Semiconductors 1s 11 Rev 2.3 Oct. 07 SKB15N60HS PG-TO263-3-2 Power Semiconductors 12 Rev 2.3 Oct. 07 SKB15N60HS i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF 10% Ir r m QF dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =60nH an d Stray capacity C σ =40pF. Figure B. Definition of switching losses Published by Power Semiconductors 13 Rev 2.3 Oct. 07 SKB15N60HS Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 11/6/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 14 Rev 2.3 Oct. 07