IRF IRG4PH40UPBF

PD - 95187
IRG4PH40UPbF
Ultra Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• Optimized for power conversion; SMPS, UPS
and welding
• Industry standard TO-247AC package
• Lead-Free
VCES = 1200V
VCE(on) typ. = 2.43V
G
@VGE = 15V, IC = 21A
E
n-channel
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• Much lower conduction losses than MOSFETs
• More efficient than short circuit rated IGBTs
TO-247AC
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
1200
41
21
82
82
± 20
270
160
65
-55 to + 150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.24
–––
6 (0.21)
0.77
–––
40
–––
Units
°C/W
g (oz)
1
04/26/04
IRG4PH40UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
1200 —
—
V
VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18
—
—
V
VGE = 0V, IC = 1.0A
Temperature Coeff. of Breakdown Voltage — 0.43 —
V/°C VGE = 0V, IC = 1.0mA
— 2.43 3.1
IC = 21A
VGE = 15V
Collector-to-Emitter Saturation Voltage
— 2.97 —
IC = 41A
See Fig.2, 5
V
— 2.47 —
IC = 21A , TJ = 150°C
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage
—
-11
— mV/°C VCE = VGE, IC = 250µA
Forward Transconductance U
16
24
—
S
VCE = 100V, IC = 21A
—
—
250
VGE = 0V, VCE = 1200V
Zero Gate Voltage Collector Current
—
—
2.0
µA
VGE = 0V, VCE = 10V, TJ = 25°C
—
— 5000
VGE = 0V, VCE = 1200V, TJ = 150°C
Gate-to-Emitter Leakage Current
—
— ±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
86
13
29
24
24
220
180
1.04
3.40
4.44
24
25
310
380
7.39
13
1800
120
18
Max. Units
Conditions
130
IC = 21A
20
nC
VCC = 400V
See Fig. 8
44
VGE = 15V
—
—
TJ = 25°C
ns
330
IC = 21A, VCC = 960V
270
VGE = 15V, RG = 10Ω
—
Energy losses include "tail"
—
mJ See Fig. 9, 10, 14
5.2
—
TJ = 150°C,
—
IC = 21A, VCC = 960V
ns
—
VGE = 15V, RG = 10Ω
—
Energy losses include "tail"
—
mJ See Fig. 11, 14
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PH40UPbF
50
F o r b o th :
T ria n g u la r w a ve :
D uty c yc le: 50%
T J = 125°C
T s ink = 90°C
G ate driv e as spec ified
40
I
Load Current ( A )
P o w e r D is s ip a tio n = 3 5 W
30
C la m p vo l ta g e :
8 0 % o f ra te d
S q u a re wave :
6 0 % o f ra te d
vo l ta g e
20
I
10
Id e a l d io de s
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I C, Collector-to-Emitter Current (A)
TJ = 150 o C
10
TJ = 25 o C
V
= 15V
20µs PULSE WIDTH
GE
1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
100
100
TJ = 150 o C
10
TJ = 25 oC
V
= 50V
5µs PULSE WIDTH
CC
1
5
6
7
8
9
10
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4PH40UPbF
4.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
50
40
30
20
10
0
25
50
75
100
125
150
V
= 15V
80 us PULSE WIDTH
GE
I C = 42 A
3.0
I C = 21 A
I C =10.5 A
2.0
1.0
-60 -40 -20
TC , Case Temperature ( ° C)
0
20
40
60
80 100 120 140 160
, Junction
Temperature
TTJ J, Junction
Temperature
( °C( °)C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
P DM
0.05
t1
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PH40UPbF
C, Capacitance (pF)
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
3000
Cies
2000
Coes
1000
Cres
0
1
10
20
VGE , Gate-to-Emitter Voltage (V)
4000
12
8
4
VCE , Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
Total Switching Losses (mJ)
100
4.6
4.4
4.2
0
10
20
30
40
RGRG
, Gate
, GateResistance
Resistance(Ohm)
(Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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20
40
60
80
100
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
V CC = 960V
V GE = 15V
TJ = 25 ° C
4.8 I C = 21A
4.0
0
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
5.0
VCC = 400V
I C = 21A
16
0
100
50
Ω
RG = 10
Ohm
VGE = 15V
VCC = 960V
IC = 42 A
10
IC = 21 A
IC = 10.5 A
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4PH40UPbF
Total Switching Losses (mJ)
1000
RG
TJ
VCC
20.0 VGE
= 10
Ohm
Ω
= 150 ° C
= 960V
= 15V
I C , Collector-to-Emitter Current (A)
25.0
VGE = 20V
T J = 125 oC
100
15.0
10.0
5.0
0.0
SAFE OPERATING AREA
0
10
20
30
40
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
10
50
1
1
10
100
1000
10000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4PH40UPbF
L
D .U .T.
VC *
50V
RL =
0 - 960V
1 00 0V
Q
960V
4 X I [email protected]°C
480µF
960V
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 960V
R
S
Q
R
90 %
10 %
S
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
1 0%
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
Eon
E o ff
E ts = (E o n +E o ff )
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7
IRG4PH40UPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30
WITH AS SEMBLY
LOT CODE 5657
AS SEMBLED ON WW 35, 2000
IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
INTERNAT IONAL
RECTIFIER
LOGO
AS SEMBLY
LOT CODE
PART NUMBER
IRFPE30
56
035H
57
DAT E CODE
YEAR 0 = 2000
WEEK 35
LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/