IRF IRG4PSC71U

PD - 91681A
IRG4PSC71U
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• UltraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
• Creepage distance increased to 5.35mm
VCES = 600V
VCE(on) typ. = 1.67V
G
@VGE = 15V, IC = 60A
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• Cost and space saving in designs that require
multiple, paralleled IGBTs
SUPER - 247
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current ➀
Clamped Inductive Load Current ➁
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ➂
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
600
85 †
60
200
200
± 20
180
350
140
-55 to + 150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm from case )
Thermal Resistance\ Mechanical
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Min.
Typ.
Max.
–––
–––
–––
20.0(2.0)
–––
–––
0.24
–––
–––
6 (0.21)
0.36
–––
38
–––
–––
Units
°C/W
N (kgf)
g (oz)
1
5/12/99
IRG4PSC71U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600 –––
Emitter-to-Collector Breakdown Voltage ➃ 18 –––
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.45
––– 1.67
VCE(ON)
Collector-to-Emitter Saturation Voltage
––– 1.95
––– 1.71
VGE(th)
Gate Threshold Voltage
3.0 –––
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10
gfe
Forward Transconductance ➄
47
70
–––
–––
ICES
Zero Gate Voltage Collector Current
––– –––
––– –––
IGES
Gate-to-Emitter Leakage Current
––– –––
V(BR)CES
V(BR)ECS
Max. Units
Conditions
–––
V
VGE = 0V, IC = 250µA
–––
V
VGE = 0V, IC = 1.0A
––– V/°C VGE = 0V, IC = 5.0mA
2.0
IC = 60A
VGE = 15V
–––
IC = 100A
See Fig.2, 5
V
–––
IC = 60A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
––– mV/°C VCE = VGE, IC = 1.0mA
–––
S
VCE = 50V, IC = 60A
500
VGE = 0V, VCE = 600V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
5.0
mA VGE = 0V, VCE = 600V, TJ = 150°C
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
340
44
160
34
50
56
86
0.42
1.99
2.41
30
49
129
175
4.5
13
7500
720
93
Max. Units
Conditions
520
IC = 60A
66
nC VCC = 400V
See Fig. 8
240
VGE = 15V
–––
–––
TJ = 25°C
ns
84
IC = 60A, VCC = 480V
130
VGE = 15V, RG = 5.0Ω
–––
Energy losses include "tail"
–––
mJ See Fig. 10, 11, 13, 14
3.2
–––
TJ = 150°C,
–––
IC = 60A, VCC = 480V
ns
–––
VGE = 15V, RG = 5.0Ω
–––
Energy losses include "tail"
–––
mJ See Fig. 13, 14
–––
nH Measured 5mm from package
–––
VGE = 0V
–––
pF
VCC = 30V
See Fig. 7
–––
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See fig. 13a)
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
† Current limited by the package, (Die current = 100A)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PSC71U
150
For both:
120
L oad C urrent (A )
Triangular wave:
Duty cycle: 50%
T J = 125°C
T sink= 90°C
Gate drive as specified
Power Dissipation = 58W
90
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
60
30
Ideal diodes
A
0
0.1
1
10
100
f, F re q ue n cy (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
I C , Collector Current
(A) (A)
Ic , Collector-to-Emitter
Current
TJ = 25 °C
TJ = 150 °C
100
100
TJ = 150 °C
10
1
1.0
I C , Collector-to-Emitter Current (A)
1000
1000
V GE = 15V
80µs PULSE WIDTH
1.5
2.0
2.5
3.0
3.5
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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TJ = 25 °C
10
V CC = 50V
5µs PULSE WIDTH
1
5
6
7
8
9
10
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4PSC71U
100
3.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current (A)
L IM IT E D B Y P A C K A G E
80
60
40
20
V G E = 1 5V
A
0
25
50
75
100
125
VGE = 15V
80 us PULSE WIDTH
IC = 120A
2.0
IC = 60A
IC = 30A
1.0
-60 -40 -20
150
TC , C a s e Te m p e ra tu re (°C )
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (° C)
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Thermal Response (ZthJC)
1
D = 0 .50
0.1
0 .20
PDM
0 .1 0
0.05
0.0 2
0.01
0.01
0.0001
t1
t2
SIN G L E PU L SE
(THE R M A L R ES PO N SE )
Notes:
1. Duty factor D = t / t
1 2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
1
10
A
100
t 1 , R e ctang ular Pulse D uratio n (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PSC71U
14000
VGE , Gate-to-Emitter Voltage (V)
12000
C, Capacitance (pF)
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
10000
Cies
8000
6000
Coes
4000
Cres
2000
0
1
10
16
12
8
4
0
100
0
VCE , Collector-to-Emitter Voltage (V)
100
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V
V GE = 15V
TJ = 25 ° C
7.0
I C = 60A
6.0
5.0
4.0
3.0
2.0
20
30
40
RG , Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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200
300
400
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
8.0
10
100
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
VCC = 400V
I C = 60A
50
RG = 5.0Ohm
Ω
VGE = 15V
VCC = 480V
IC = 120 A
10
IC = 60 A
IC = 30 A
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4PSC71U
RG
TJ
12 VCC
VGE
1000
Ω
= 5.0Ohm
= 150 °C
= 480V
= 15V
I C , Collector Current (A)
Total Switching Losses (mJ)
14
10
8
6
4
VGE = 20V
T J = 125 oC
100
10
2
SAFE OPERATING AREA
1
0
20
40
60
80
100
I C , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
120
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4PSC71U
L
D .U .T.
VC *
50V
RL =
0 - 480V
1 00 0V
480V
4 X [email protected]°C
480µF
960V

‚
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V

‚
ƒ

‚
9 0%
1 0%
ƒ
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
10 %
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
E on
E o ff
E ts = ( Eo n +E o ff )
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7
IRG4PSC71U
Case Outline and Dimensions — Super-247
Dimensions are shown in millimeters
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
5/99
8
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