NPN Silicon RF Transistor BFQ 29P ● For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. ● CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BFQ 29P KC Q62702-F659 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 15 V Collector-base voltage VCB0 20 Emitter-base voltage VEB0 3 Collector current IC 30 Base current IB 4 Total power dissipation, TS ≤ 65 ˚C 3) Ptot 280 mW Junction temperature Tj 150 ˚C Ambient temperature range TA – 65 … + 150 Storage temperature range Tstg – 65 … + 150 Junction - ambient 2) Rth JA ≤ 385 Junction - soldering point 3) Rth JS ≤ 305 mA Thermal Resistance For detailed dimensions see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. 1) 2) K/W BFQ 29P Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 15 – – – – – – 0.05 10 – – 100 50 50 – 140 250 – – 0.1 0.4 DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CE0 Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 20 V, IE = 0 ICB0 Emitter-base cutoff current VEB = 3 V, IC = 0 IEB0 DC current gain IC = 3 mA, VCE = 6 V IC = 10 mA, VCE = 6 V hFE Collector-emitter saturation voltage IC = 20 mA, IB = 1 mA VCEsat V µA µA – V BFQ 29P Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – 3.6 2.7 5 – – AC Characteristics Transition frequency IC = 3 mA, VCE = 6 V, f = 200 MHz IC = 20 mA, VCE = 6 V, f = 200 MHz fT GHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Ccb – 0.5 0.65 Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Cce – 0.28 – Input capacitance VEB = 0.5 V, IC = ic = 0, f = 1 MHz Cibo – 1.35 – Output capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Cobs – 0.8 – Noise figure IC = 3 mA, VCE = 6 V, f = 10 MHz, ZS = 75 Ω IC = 4 mA, VCE = 6 V, f = 800 MHz, ZS = 50 Ω F – – 0.9 1.5 1.2 – Power gain IC = 20 mA, VCE = 6 V, f = 800 MHz, Z0 = 50 Ω, ZL = ZLopt Gpe – 14 – Transducer gain IC = 20 mA, VCE = 6 V, f = 1 GHz, Z0 = 50 Ω I S21e I 2 – 11 – Linear output voltage two-tone intermodulation test IC = 20 mA, VCE = 6 V, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω Vo1 = Vo2 – 180 – mV Third order intercept point IC = 20 mA, VCE = 6 V, f = 800 MHz IP3 28 – dBm pF dB – BFQ 29P Total power dissipation Ptot = f (TA*; TS) *Package mounted on alumina Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1 MHz Transition frequency fT = f (IC) VCE = 6 V, f = 200 MHz BFQ 29P Common Emitter Noise Parameters f Fmin Gp(Fmin) GHz dB dB Γopt RN N F50 Ω G p(F50Ω) ANG Ω – dB dB (ZS = 130 Ω) – – 1.2 – – 11.1 – 0.20 1.1 1.45 – 14 MAG IC = 3 mA, VCE = 6 V, Z0 = 50 Ω 0.01 0.85 – IC = 5 mA, VCE = 6 V, Z0 = 50 Ω 0.01 0.8 0.85 1.25 – 13 Noise figure F = f (ZS) VCE = 6 V, f = 10 MHz (ZS = 100 Ω) 0.25 93.5 BFQ 29P Circles of constant noise figure F = f (ZS) in ZS-plane, IC = 5 mA, VCE = 6 V, f = 800 MHz Noise figure F = f (IC) VCE = 6 V, f = 800 MHz, ZLopt (G) BFQ 29P Common Emitter S Parameters f S11 GHz MAG S21 ANG S12 S22 MAG ANG MAG ANG MAG ANG 6.76 6.42 5.16 4.19 2.99 2.48 2.11 1.78 1.51 1.42 158 144 133 113 92 82 74 63 54 48 0.03 0.06 0.08 0.11 0.11 0.12 0.13 0.14 0.16 0.17 76 65 57 47 41 41 42 47 52 56 0.97 0.89 0.85 0.73 0.62 0.59 0.57 0.55 0.54 0.52 – 7 – 17 – 23 – 29 – 33 – 35 – 37 – 40 – 46 – 48 IC = 2 mA, VCE = 6 V, Z0 = 50 Ω 0.1 0.2 0.3 0.5 0.8 1.0 1.2 1.5 1.8 2.0 0.93 0.86 0.79 0.66 0.50 0.47 0.45 0.43 0.45 0.46 – 20 – 45 – 62 – 93 – 129 – 147 – 161 179 159 149 S11, S22 = f (f) IC = 2 mA, VCE = 6 V, Z0 = 50 Ω S12, S21 = f (f) IC = 2 mA, VCE = 6 V, Z0 = 50 Ω BFQ 29P Common Emitter S Parameters (continued) f S11 GHz MAG S21 ANG S12 S22 MAG ANG MAG ANG MAG ANG 13.96 11.55 8.56 6.06 4.00 3.25 2.74 2.28 1.94 1.80 147 129 119 102 85 77 71 61 54 49 0.03 0.05 0.06 0.08 0.10 0.12 0.13 0.16 0.19 0.20 72 60 55 53 55 57 58 59 60 60 0.89 0.76 0.68 0.54 0.46 0.45 0.43 0.42 0.41 0.39 – 13 – 28 – 31 – 34 – 33 – 35 – 36 – 39 – 44 – 44 IC = 5 mA, VCE = 6 V, Z0 = 50 Ω 0.1 0.2 0.3 0.5 0.8 1.0 1.2 1.5 1.8 2.0 0.80 0.69 0.57 0.46 0.35 0.34 0.34 0.34 0.36 0.37 – 31 – 66 – 84 – 118 – 152 – 167 – 180 164 148 139 S11, S22 = f (f) IC = 5 mA, VCE = 6 V, Z0 = 50 Ω S12, S21 = f (f) IC = 5 mA, VCE = 6 V, Z0 = 50 Ω BFQ 29P Common Emitter S Parameters (continued) f S11 GHz MAG S21 ANG MAG S12 S22 ANG MAG ANG MAG ANG 135 117 108 94 80 74 69 60 53 49 0.03 0.04 0.05 0.07 0.10 0.12 0.14 0.17 0.20 0.22 69 58 59 61 63 65 64 63 62 62 0.79 0.61 0.54 0.43 0.39 0.38 0.36 0.36 0.35 0.33 – 18 – 32 – 33 – 33 – 30 – 32 – 34 – 36 – 41 – 42 IC = 10 mA, VCE = 6 V, Z0 = 50 Ω 0.1 0.2 0.3 0.5 0.8 1.0 1.2 1.5 1.8 2.0 0.65 0.53 0.42 0.35 0.29 0.30 0.30 0.30 0.33 0.35 – 46 – 87 – 104 – 137 – 169 179 169 155 141 133 20.65 14.88 10.41 6.92 4.47 3.59 3.04 2.50 2.11 1.97 S11, S22 = f (f) IC = 10 mA, VCE = 6 V, Z0 = 50 Ω S12, S21 = f (f) IC = 10 mA, VCE = 6 V, Z0 = 50 Ω BFQ 29P Common Emitter S Parameters (continued) f S11 GHz MAG S21 ANG MAG S12 S22 ANG MAG ANG MAG ANG 126 109 102 89 77 72 67 59 52 48 0.02 0.03 0.04 0.06 0.09 0.12 0.14 0.17 0.21 0.22 67 62 65 68 68 69 68 66 64 63 0.69 0.50 0.46 0.39 0.36 0.36 0.35 0.34 0.34 0.32 – 21 – 32 – 30 – 28 – 26 – 28 – 30 – 33 – 39 – 39 IC = 20 mA, VCE = 6 V, Z0 = 50 Ω 0.1 0.2 0.3 0.5 0.8 1.0 1.2 1.5 1.8 2.0 0.47 0.40 0.33 0.31 0.28 0.29 0.30 0.30 0.33 0.35 – 64 – 108 – 125 – 154 178 169 161 148 135 128 25.26 16.60 11.22 7.16 4.57 3.65 3.09 2.54 2.15 2.00 S11, S22 = f (f) IC = 20 mA, VCE = 6 V, Z0 = 50 Ω S12, S21 = f (f) IC = 20 mA, VCE = 6 V, Z0 = 50 Ω