INFINEON IPA030N10N3G

IPA030N10N3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
V DS
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
100
V
R DS(on),max
3
mΩ
ID
79
A
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPA030N10N3 G
Package
PG-TO220-FP
Marking
030N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
79
T C=100 °C
56
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
316
Avalanche energy, single pulse
E AS
I D=79 A, R GS=25 Ω
1000
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
41
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
1)
2)
Rev. 2.1
55/175/56
J-STD20 and JESD22
See figure 3
page 1
2009-07-09
IPA030N10N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
3.7
100
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=270 µA
2
2.7
3.5
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=100 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=79 A
-
2.6
3
mΩ
V GS=6 V, I D=40 A
-
3
4.8
-
1.9
-
Ω
86
171
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=79 A
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1
page 2
2009-07-09
IPA030N10N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
11100
14800 pF
-
1940
2580
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
69
-
Turn-on delay time
t d(on)
-
42
-
Rise time
tr
-
38
-
Turn-off delay time
t d(off)
-
112
-
Fall time
tf
-
37
-
Gate to source charge
Q gs
-
47
-
Gate to drain charge
Q gd
-
27
-
-
41
-
V GS=0 V, V DS=50 V,
f =1 MHz
V DD=50 V, V GS=10 V,
I D=79 A, R G=1.6 Ω
ns
Gate Charge Characteristics 4)
V DD=50 V, I D=79 A,
V GS=0 to 10 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
155
206
Gate plateau voltage
V plateau
-
4.2
-
Output charge
Q oss
-
205
273
nC
-
-
70
A
-
-
316
-
0.9
1.2
V
-
80
-
ns
-
190
-
nC
V DD=50 V, V GS=0 V
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
4)
Rev. 2.1
T C=25 °C
V GS=0 V, I F=79 A,
T j=25 °C
V R=50 V, I F=25 A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
page 3
2009-07-09
IPA030N10N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
50
80
70
40
60
50
I D [A]
P tot [W]
30
20
40
30
20
10
10
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
100 µs
10 µs
0.5
102
100
101
Z thJC [K/W]
I D [A]
1 ms
10 ms
DC
10
0.2
0.1
0.05
10-1
0.02
0
0.01
single pulse
10
-1
10-1
10
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
101
t p [s]
V DS [V]
Rev. 2.1
-2
page 4
2009-07-09
IPA030N10N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
250
6
7.5 V
10 V
5V
5.5 V
5
200
4.5 V
4
I D [A]
R DS(on) [mΩ]
150
4.5 V
100
5V
6V
3
7.5 V
10 V
2
50
1
0
0
0
1
2
3
0
20
40
V DS [V]
60
80
100
80
100
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
200
200
160
150
120
I D [A]
g fs [S]
250
100
80
25 °C
175 °C
50
40
0
0
0
2
4
6
8
Rev. 2.1
0
20
40
60
I D [A]
V GS [V]
page 5
2009-07-09
IPA030N10N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=79 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
7
4
6
3.5
3
2700 µA
2.5
4
V GS(th) [V]
R DS(on) [mΩ]
5
98 %
3
typ
270 µA
2
1.5
2
1
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
105
103
Ciss
104
102
10
25 °C
I F [A]
C [pF]
Coss
3
25 °C, 98%
101
Crss
102
101
100
0
20
40
60
80
V DS [V]
Rev. 2.1
175 °C, 98%
175 °C
0
0.5
1
1.5
2
V SD [V]
page 6
2009-07-09
IPA030N10N3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=79 A pulsed
parameter: T j(start)
parameter: V DD
100
10
25 °C
8
100 °C
80 V
150 °C
50 V
V GS [V]
I AS [A]
6
10
20 V
4
2
1
0
1
10
100
1000
0
40
80
120
160
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
110
V GS
Qg
V BR(DSS) [V]
105
100
V g s(th)
95
Q g(th)
Q sw
Q gs
90
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 2.1
page 7
2009-07-09
IPA030N10N3 G
PG-TO220-FP
Rev. 2.1
page 8
2009-07-09
IPA030N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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on the types in question, please contact the nearest Infineon Technologies Office.
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Rev. 2.1
page 9
2009-07-09