INFINEON IPB025N10N3G

IPB025N10N3 G
OptiMOS™3 Power-Transistor
Product Summary
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
V DS
100
V
R DS(on),max
2.5
mΩ
ID
180
A
• Extremely low on-resistance R DS(on)
• High current capability
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
Type
IPB025N10N3 G
Package
PG-TO263-7
Marking
025N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
180
T C=100 °C
167
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
720
Avalanche energy, single pulse
E AS
I D=100 A, R GS=25 Ω
1000
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
300
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
1)
2)
55/175/56
J-STD20 and JESD22
See figure 3
Rev. 2.03
page 1
2009-12-11
IPB025N10N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
0.5
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
100
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
R thJA
junction - ambient
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=275 µA
2
2.7
3.5
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=100 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=100 A
-
2.0
2.5
mΩ
V GS=6 V, I D=50 A
-
2.5
4.4
-
1.9
-
Ω
100
200
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.03
page 2
2009-12-11
IPB025N10N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
11100
14800 pF
-
1940
2580
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
69
-
Turn-on delay time
t d(on)
-
34
-
Rise time
tr
-
58
-
Turn-off delay time
t d(off)
-
84
-
Fall time
tf
-
28
-
Gate to source charge
Q gs
-
48
64
Gate to drain charge
Q gd
-
27
-
-
42
-
V GS=0 V, V DS=50 V,
f =1 MHz
V DD=50 V, V GS=10 V,
I D=100 A, R G=1.6 Ω
ns
Gate Charge Characteristics 4)
V DD=50 V, I D=100 A,
V GS=0 to 10 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
155
206
Gate plateau voltage
V plateau
-
4.3
-
Output charge
Q oss
-
205
273
nC
-
-
180
A
-
-
720
-
1
1.2
V
-
86
-
ns
-
232
-
nC
V DD=50 V, V GS=0 V
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
4)
T C=25 °C
V GS=0 V, I F=100 A,
T j=25 °C
V R=50 V, I F=100A ,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev. 2.03
page 3
2009-12-11
IPB025N10N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
200
350
180
300
160
140
120
200
I D [A]
P tot [W]
250
100
150
80
60
100
40
50
20
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
100
limited by on-state
resistance
1 µs
10 µs
100 µs
102
0.5
Z thJC [K/W]
I D [A]
1 ms
10 ms
101
DC
0.2
10-1
0.1
0.05
100
0.02
0.01
single pulse
10-1
10-1
10-2
100
101
102
103
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 2.03
10-5
page 4
2009-12-11
IPB025N10N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
300
6
10 V
6V
250
5
7.5 V
5.5 V
5V
4.5 V
5V
4
R DS(on) [mΩ]
I D [A]
200
150
3
6V
7.5 V
4.5 V
100
2
50
1
0
10 V
0
0
1
2
0
40
80
V DS [V]
120
160
200
240
280
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
300
240
250
200
200
160
g fs [S]
I D [A]
parameter: T j
150
100
120
80
25 °C
50
40
175 °C
0
0
0
2
4
6
Rev. 2.03
0
40
80
120
160
I D [A]
V GS [V]
page 5
2009-12-11
IPB025N10N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=100 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
6
4
3.5
5
3
2750 µA
2.5
V GS(th) [V]
R DS(on) [mΩ]
4
98 %
3
typ
275 µA
2
1.5
2
1
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
105
103
175 °C, 98%
Ciss
104
25 °C
102
I F [A]
C [pF]
Coss
103
175 °C
101
Crss
102
25 °C, 98%
101
100
0
20
40
60
80
V DS [V]
Rev. 2.03
0
0.5
1
1.5
2
V SD [V]
page 6
2009-12-11
IPB025N10N3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=100 A pulsed
parameter: T j(start)
parameter: V DD
1000
10
8
80 V
100
50 V
6
V GS [V]
I AS [A]
25 °C
100 °C
150 °C
20 V
4
10
2
1
0
1
10
100
1000
0
40
80
120
160
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
110
V GS
Qg
V BR(DSS) [V]
105
100
V g s(th)
95
Q g(th)
Q sw
Q gs
90
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 2.03
page 7
2009-12-11
IPB025N10N3 G
PG-TO263-3: Outline
Rev. 2.03
page 8
2009-12-11
IPB025N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.03
page 9
2009-12-11