Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.821A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7130 IRHN8130 HEXFET® TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100 Volt, 0.18Ω International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical preand post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1. No compensation in gate drive circuitry is required. In addition, these devices are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the MEGA RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHN7130 IRHN8130 ■ ID 14 14 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Pre-Radiation Parameter VGS EAS I AR EAR dv/dt TJ TSTG RDS(on) 0.18Ω 0.18Ω Features: Absolute Maximum Ratings I D @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C BV DSS 100V 100V IRHN7130, IRHN8130 Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range 14 9.0 56 75 0.60 ±20 160 (see fig. 29) 14 7.5 5.5 (see fig. 30) -55 to 150 Package Mounting Surface Temperature Weight 300 (for 5 sec.) 2.6 (typical) To Order Units A W W/K ➄ V mJ A mJ V/ns oC g Previous Datasheet Index Next Data Sheet IRHN7130, IRHN8130 Devices Pre-Radiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min. Typ. Max. Units 100 — — 0.12 — — — — 2.0 3.3 — — — — — — — — 0.18 0.20 4.0 — 25 250 V V/°C IGSS IGSS Qg Qgs Qgd t d(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — — — — — — — — — — — — — — — — — — 2.0 100 -100 45 11 17 30 120 49 64 — LS Internal Source Inductance — 4.1 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1100 310 55 — — — Ω V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nC ns nH pF Test Conditions VGS = 0V, ID = 1.0 mA Reference to 25°C, ID = 1.0 mA VGS = 12V, ID = 9A ➃ VGS = 12V, ID = 14A VDS = VGS, ID = 1.0 mA VDS > 15V, IDS = 9A ➃ VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 14A VDS = Max. Rating x 0.5 (see figure 23 and 31) VDD = 50V, ID = 14A, RG = 7.5Ω (see figure 28) Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. VGS = 0V, VDS = 25V f = 1.0 MHz (see figure 22) Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ VSD t rr Q RR t on Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time — — — — 14 56 A Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = 14A, VGS = 0V ➃ Tj = 25°C, IF = 14A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD. — — — — — — 1.8 370 3.5 V ns µC Thermal Resistance Parameter Min. Typ. Max. Units RthJC Junction-to-Case — — 1.67 RthJ-PCB Junction-to-PC board — TBD — Test Conditions K/W➄ To Order soldered to a copper-clad PC board Previous Datasheet Index Next Data Sheet IRHN7130, IRHN8130 Devices Radiation Characteristics Radiation Performance of Mega Rad Hard HEXFETs International Rectifier Radiation Hardened HEX-FETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are specified in DC parameters. At a radiation level of 1 x106 Rads (Si), leakage remains low and the device is usable with no change in drive circuitry required. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and figure 8a and a VDSS bias condition equal to 80% of the device rated voltage per note 7 and figure 8b. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHN7130. Device performance limits at a post radiation level of 1 x 106 Rads (Si) are presented in Table 1, column 2, IRHN8130. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Typical delta curves showing radiation response appear in figures 1 through 5. Typical postradiation curves appear in figures 10 through 17. Table 1. Low Dose Rate ➅ ➆ VSD International Rectifier radiation hardened HEXFETs have been characterized in neutron and heavy ion Single Event Effects (SEE) environments. The effects on bulk silicon of the type used by International Rectifier on RAD HARD HEXFETs are shown in figure 6. Single Event Effects characterization is shown in Table 3. IRHN7130 Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. Photocurrent and transient voltage waveforms are shown in figure 7, and the recommended test circuit to be used is shown in figure 9. IRHN8130 100K Rads (Si) 1000K Rads (Si) Units Drain-to-Source Breakdown Voltage Gate Threshold Voltage ➃ Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance One Diode Forward Voltage ➃ Test Conditions ➉ min. max. min. max. 100 2.0 — — — — — 4.0 100 -100 25 0.18 100 1.25 — — — — — 4.5 100 -100 25 0.24 nA µA Ω VGS = 0V, I D = 1.0 mA VGS = VDS, I D = 1.0 mA VGS = +20V VGS = -20V VDS = 0.8 x Max Rating, VGS = 0 VGS = 12V, ID = 9A — 1.8 — 1.8 V TC = 25°C, IS = 14A,VGS = 0V V Table 2. High Dose Rate ➇ 1011 Rads (Si)/sec 1012 Rads (Si)/sec Parameter VDSS Min. Typ Max. Min. Typ. Max. Units Test Conditions — — 80 — — 80 V Applied drain-to-source voltage during gamma-dot — 100 — — 100 — A Peak radiation induced photo-current — — 1000 — — 200 A/µsec Rate of rise of photo-current 0.1 — — 0.5 — — µH Circuit inductance required to limit di/dt Drain-to-Source Voltage IPP di/dt L1 Table 3. Single Event Effects ➈ Parameter Typ. Units Ion LET (Si) (MeV/mg/cm2) Fluence (ions/cm2) Range (µm) VDS Bias (V) VGS Bias (V) BV DSS 100 V Ni 28 1 x 105 ~41 100 -5 To Order Previous Datasheet Index Next Data Sheet Post-Radiation IRHN7130, IRHN8130 Devices V GS = 12V ID = 9.0A Figure 1. – Typical Response of Gate Threshold Voltage Vs. Total Dose Exposure. Figure 2. – Typical Response of On-State Resistance Vs. Total Dose Exposure. VDS ≥ 15V ID = 9.0A Figure 3. – Typical Response of Transconductance Vs. Total Dose Exposure. Figure 4. – Typical Response of Drain-to-Source Breakdown Vs. Total Dose Exposure. To Order Previous Datasheet Index Next Data Sheet Post-Radiation IRHN7130, IRHN8130 Devices Figure 5. – Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure. Figure 6. – Typical On-State Resistance Vs. Neutron Fluence Level Figure 8a – Gate Stress of VGSS Equals 12 Volts During Radiation. Figure 7. – Typical Transient Response of Rad Hard HEXFET During 1 x 1012 Rad (Si)/Sec Exposure. Figure 8b – VDSS Stress Equals 80% of BVDSS During Radiation. To Order Figure 9. – High Dose Rate (Gamma Dot) Test Circuit Previous Datasheet Index IRHN7130, IRHN8130 Devices Next Data Sheet Radiation Characteristics Note: Bias Conditions during radiation; VGS = 12 V dc, VDS = 0 Vdc Figure 10. – Typical Output Characteristics Pre-Radiation. Figure 11. – Typical Output Characteristics, Post Radiation 100K Rads (Si). Figure 12. – Typical Output Characteristics Post-Radiation 300K Rads (Si). To Order Figure 13. – Typical Output Characteristics Post-Radiation 1 Mega Rads (Si) Previous Datasheet Index IRHN7130, IRHN8130 Devices Next Data Sheet Radiation Characteristics Note: Bias Conditions during radiation; VGS = 12 V dc, VDS = 0 Vdc Figure 14. – Typical Output Characteristics Pre-Radiation. Figure 15. – Typical Output Characteristics, Post-Radiation 100K Rads (Si). Figure 16. – Typical Output Characteristics, Post-Radiation 300K Rads (Si). Figure 17. – Typical Output Characteristics, Post-Radiation 1 Mega Rads (Si). To Order Previous Datasheet Index Next Data Sheet IRHN7130, IRHN8130 Devices Pre-Radiation Figure 18. – Typical Output Characteristics, TC = 25°C Figure 19. – Typical Output Characteristics, TC = 150°C ID = 14A Figure 20. – Typical Transfer Characteristics Figure 21. – Normalized On-Resistance Vs. Temperature To Order Previous Datasheet Index Next Data Sheet IRHN7130, IRHN8130 Devices Pre-Radiation ID = 14A Figure 22. – Typical Capacitance Vs. Drain-to-Source Voltage. Figure 23. – Typical Gate Charge Vs. Gate-to-Source Voltage. 1000 I D, Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10us 100us 10 1ms 1 TC = 25 o C TJ = 150 o C Single Pulse 1 10ms 10 100 V DS, Drain-to-Source Voltage (V) Figure 24. – Typical Source-Drain Diode Forward Voltage To Order Figure 25. – Maximum Safe Operating Area 1000 Previous Datasheet Index Next Data Sheet Pre-Radiation IRHN7130, IRHN8130 Devices Thermal Response (Z thJC) 10 1 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Figure 26. – Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 14 I D , Drain Current (A) 12 10 8 6 4 2 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) Figure 27. – Maximum Drain Current Vs. Case Temperature. To Order Previous Datasheet Index IRHN7130, IRHN8130 Devices Next Data Sheet Pre-Radiation Figure 28a – Switching Time Test Circuit Figure 29a – Unclamped Inductive Test Circuit Figure 28b – Switching Time Waveforms Figure 29b – Unclamped Inductive Waveforms To Order Previous Datasheet Index Next Data Sheet Pre-Radiation IRHN7130, IRHN8130 Devices PEAK IL = 14A VDD = 25V Figure 29c – Maximum Avalanche Energy Vs. Starting Junction Temperature. Figure 30 – Peak Diode Recovery dv/dt Test Circuit To Order Previous Datasheet Index Next Data Sheet IRHN7130, IRHN8130 Devices Pre-Radiation Figure 31b – Gate Charge Test Circuit Figure 31a – Basic Gate Waveform Figure 32. – Typical Time to Accumulated 1% Failure To Order Previous Datasheet Index Next Data Sheet IRHN7130, IRHN8130 Devices Radiation Characteristics ➅ Total Dose Irradiation with VGS Bias. ➀ Repetitive Rating; Pulse width limited by ➁ ➂ ➃ ➄ maximum junction temperature. (figure 26) Refer to current HEXFET reliability report. @ VDD = 25V, Starting T J = 25°C, Peak IL = 14A, EAS = [0.5 * L * (IL2) * [BV DSS/(BV DSS-VDD)] VGS = 12V, 25 ≤ RG ≤ 200Ω ISD ≤ 14A, di/dt ≤ 140 A/µs, VDD ≤ BV DSS, TJ ≤ 150°C Suggested RG = 7.5Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% K/W = °C/W W/K = W/°C ➆ ➇ ➈ ➉ 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. (figure 8a) Total Dose Irradiation with VDS Bias. VDS = 0.8 x rated BV DSS (pre-radiation) applied and V GS = 0 during irradiation per MlL-STD-750, method 1019. (figure 8b) This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. (figure 9) Study sponsored by NASA. Evaluation performed at Brookhaven National Labs. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications. Case Outline and Dimensions – SMD-1 Notes: 1. Dimensioning and Tolerancing per ANSI Y14.5M-1982 2. Controlling Dimension: Inch 3. Dimensions are shown in millimeters (Inches) 4 Dimension includes metallization flash 5 Dimension does not include metallization flash WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 9/96 To Order