DDD_RH1086MK_W10913024_1_W17.pdf

DDD RH1086MK W10913024.1 W17
Neutron Irradiation Test Results of the RH1086MK
1.5A Low Dropout Positive Adjustable Regulator
19 January 2015
Duc Nguyen, Sana Rezgui
Acknowledgements
The authors would like to thank the S-Power Product Engineering Groups from Linear
Technology for the data collection pre- and post-irradiations. Special thanks are also for
Thomas Regan from University of Massachusetts, Lowell (UMASS) for the help with the
neutrons irradiation tests.
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DDD RH1086MK W10913024.1 W17
Neutron Radiation Testing of the RH1086MK 1.5A Low
Dropout Positive Adjustable Regulator
Part Type Tested: RH1086MK 1.5A Low Dropout Positive Adjustable Regulator
Traceability Information: Fab Lot# W10913024.1; Wafer # 17; Assembly Lot # 540912.1; Date
Code 0941A. See photograph of unit under test in Appendix A.
Quantity of Units: 7 units received, 2 units for control, and 5 units for unbiased irradiation. Leads
of devices, serial numbers 54-56, 64, and 66 were shorted together using anti-static foam during
irradiation. Serial numbers 69 and 70 were used as control. See Appendix B for the radiation bias
connection tables.
Radiation Dose: Total fluence of 1E12 neutron/cm2.
Radiation Test Standard: MIL-STD-883 TM1017 and Linear Technology RH1086MK SPEC No.
05-08-5021.
Test Hardware and Software: LTX test program EFCR1086.05
Facility and Radiation Source: University of Massachusetts, Lowell and Reactor Facility-FNI.
Irradiation and Test Temperature: Room temperature controlled to 24°C±6°C per MIL-STD-883
and MIL-STD-750.
SUMMARY
ALL FIVE PARTS PASSED THE ELECTRICAL TEST LIMITS AS
SPECIFIED IN THE DATASHEET AFTER IRRADIATION TO 1E12 N/cm2.
ADDITIONAL INFORMATION CAN BE PROVIDED PER REQUEST.
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1.0
Overview and Background
Neutron particles incident on semiconductor materials lose energy along their paths. The energy
loss produces electron-hole pairs (ionization) and displaces atoms in the material lattice
(displacement damage defects or DDD). DDD induces a mixture of isolated and clustered defects
or broken bonds. Such defects elevate the energy level of the material and consequently change
material and electrical properties. The altering energy level creates the combination of any of the
following processes, thermal generation of electron-hole pairs, recombination, trapping,
compensation, tunneling, affecting hence the devices’ basic features. We run the electrical tests
after we had made sure that the parts are not radioactive anymore to be shipped to LTC.
Bipolar technology is susceptible to neutron displacement damage around a fluence level of 1E12
neutron/cm2. The neutron radiation test for the RH1086MK determines the change in device
performance as a function of neutrons’ fluence.
2.0
Radiation Facility:
Five samples were irradiated unbiased at the University of Massachusetts, Lowell, using the
Reactor Facility-FNI. The neutron flux was determined by system S/P-32, method ASTM E-265,
to be 4.05E9 N/cm2-s (1MeV equivalent) for each irradiation step. Refer to Appendix C for the
certificate of dosimetry.
3.0
Test Conditions
Five samples and two control units were electrically tested at 25°C prior to irradiation. The testing
was performed on the two control units to confirm the operation of the test system prior to the
electrical testing of the 7 units (5 irradiated and 2 control). During irradiation, devices leads were
shorted together using anti-static foam and devices then were placed into an anti-static bag.
Devices were then vertically aligned with the radiation source.
The criteria to pass the neutron displacement damage test is that five irradiated samples must
pass the datasheet limits. If any of the tested parameters of these five units do not meet the
required limits then a failure-analysis of the part should be conducted in accordance with method
5004, MIL-STD-883, and if valid the lot will be scrapped.
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4.0
Tested Parameters
The following parameters were measured pre- and post-irradiations:
-
Reference Voltage (V) @ IOUT = 10mA, (VIN – VOUT) = 3V
Reference Voltage (V) @ 10mA ≤ IOUT ≤ 1.5A, 1.5V ≤ (VIN – VOUT) ≤ 15V
Line Regulation (%) @ IOUT = 10mA, 1.5V ≤ (VIN – VOUT) ≤ 15V
Load Regulation (%) @ (VIN – VOUT) = 3V, 10mA ≤ IOUT ≤ 1.5A
Dropout Voltage (V) @ ∆VREF = 1%, IOUT = 1.5A
Current Limit (A) @ (VIN – VOUT) = 5V
Current Limit (A) @ (VIN – VOUT) = 25V
Minimum Load Current (mA) @ (VIN – VOUT) = 25V
Adjust Pin Current (uA)
Adjust Pin Current Change (uA) @10mA ≤ IOUT ≤ 1.5A, 1.5V ≤ (VIN – VOUT) ≤ 15V
Appendix D details the test conditions, minimum and maximum values at different accumulated
doses.
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5.0
Test Results
All five samples passed the post-irradiation electrical tests. All measurements of the ten listed
parameters in section 4.0 are within the specification limits.
The used statistics in this report are based on the tolerance limits, which are bounds to gage the
quality of the manufactured products. It assumes that if the quality of the items is normally
distributed with known mean and known standard deviation, the two-sided tolerance limits can be
calculated as follows:
+KTL = mean + (KTL) (standard deviation)
-KTL = mean - (KTL) (standard deviation)
Where +KTL is the upper tolerance limit and -KTL is the lower tolerance limit.
These tolerance limits are defined in a table of inverse normal probability distribution.
However, in most cases, mean and standard deviations are unknown and therefore it is practical
to estimate both of them from a sample. Hence the tolerance limit depends greatly on the sample
size. The Ps90%/90% KTL factor for a lot quality P of 0.9, confidence C of 0.9 with a sample size
of 5, can be found from the tabulated table (MIL-HDBK-814, page 94, table IX-B). The KTL factor
in this report is 2.742.
In the plots, the dashed lines with X-markers are the measured data points of five post-irradiated
samples. The solid lines with square symbols are the computed KTL values of five post-irradiated
samples with the application of the KTL statistics. The orange solid lines with circle markers are
the datasheet specification limits.
The post-irradiation test limits are using Linear Technology datasheets 100 Krads(Si) specification
limits.
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1.2650
Specification MAX
VREF (V) @ VIN - VOUT = 3V, IL = 10mA
1.2600
1.2550
Ps90%/90% (+KTL) Un-biased
1.2500
1.2450
Average Un-biased
1.2400
1.2350
Ps90%/90% (-KTL) Un-biased
1.2300
1.2250
1.2200
1.2150
0.E+00
Specification MIN
5.E+11
Total Fluence
1.E+12
2.E+12
(neutrons/cm2)
Figure 5.1 Plot Reference Voltage @ IOUT = 10mA, (VIN – VOUT) = 3V versus Total Fluence
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Table 5.1: Raw data table for Reference Voltage @ IOUT = 10mA, (VIN – VOUT) = 3V of pre- and
post-irradiation (1E12 N/cm2)
Parameter
Units
54
55
56
64
66
69
70
VREF @ VIN -VOUT =3V; IL=10mA
Total Fluence (neutrons/cm 2)
(V)
0
1.E+12
Un-biased Irradiation
1.25186
1.22590
Un-biased Irradiation
1.25504
1.22670
Un-biased Irradiation
1.25605
1.22924
Un-biased Irradiation
1.24980
1.22300
Un-biased Irradiation
1.24991
1.22341
Control Unit
1.24868
1.24845
Control Unit
1.25692
1.25681
Un-biased Irradiation Statistics
Average Un-biased
1.25253
1.22565
Std-Dev Un-biased
0.00289
0.00255
Ps90%/90% (+KTL) Un-biased
1.26046
1.23265
Ps90%/90% (-KTL) Un-biased
1.24460
1.21865
Specification MIN
1.238
1.220
Status (Measurements)
PASS
PASS
Specification MAX
1.262
1.262
Status (Measurements)
PASS
PASS
Status (-KTL) Un-biased
Status (+KTL) Un-biased
PASS
PASS
FAIL
PASS
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VREF (V) @ 1.5V ≤ VIN - VOUT ≤ 15V,10mA ≤IL ≤1.5A
1.2800
Specification MAX
1.2700
1.2600
Ps90%/90% (+KTL) Un-biased
1.2500
Average Un-biased
1.2400
1.2300
Ps90%/90% (-KTL) Un-biased
1.2200
1.2100
1.2000
0.E+00
Specification MIN
5.E+11
1.E+12
Total Fluence
(neutrons/cm2)
2.E+12
Figure 5.2: Plot of versus Reference Voltage @ 10mA ≤ IOUT ≤ 1.5A, 1.5V ≤ (VIN – VOUT) ≤ 15V
versus Total Fluence
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Table 5.2: Raw data table for Reference Voltage @ 10mA ≤ IOUT ≤ 1.5A, 1.5V ≤ (VIN – VOUT) ≤
15V of pre- and post-irradiation (1E12 N/cm2)
Parameter VREF. @ 1.5V to 15V;10mA IL 1.5A
Total Fluence (neutrons/cm 2)
Units
(V)
0
1.E+12
54
Un-biased Irradiation
1.25121
1.22473
55
Un-biased Irradiation
1.25414
1.22526
56
Un-biased Irradiation
1.25513
1.22778
64
Un-biased Irradiation
1.24906
1.22188
66
Un-biased Irradiation
1.24922
1.22221
69
Control Unit
1.24785
1.24768
70
Control Unit
1.25590
1.25593
Un-biased Irradiation Statistics
Average Un-biased
1.25175
1.22437
Std-Dev Un-biased
0.00279
0.00242
Ps90%/90% (+KTL) Un-biased
1.25939
1.23100
Ps90%/90% (-KTL) Un-biased
1.24411
1.21774
Specification MIN
1.225
1.210
Status (Measurements)
PASS
PASS
Specification MAX
1.270
1.275
Status (Measurements)
PASS
PASS
Status (-KTL) Un-biased
Status (+KTL) Un-biased
PASS
PASS
PASS
PASS
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Line Reg (%) @ 1.5V≤ VIN-VOUT ≤ 15V,IL= 15mA
0.3000
0.2500
Specification MAX
0.2000
Ps90%/90% (+KTL) Un-biased
0.1500
0.1000
Average Un-biased
0.0500
Ps90%/90% (-KTL) Un-biased
0.0000
-0.0500
0.E+00
5.E+11
1.E+12
2.E+12
Total Fluence (neutrons/cm2)
Figure 5.3: Plot of Line Regulation @ IOUT = 10mA, 1.5V ≤ (VIN – VOUT) ≤ 15V versus Total Fluence
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Table 5.3: Raw data table for Line Regulation @ IOUT = 10mA, 1.5V ≤ (VIN – VOUT) ≤ 15V of preand post-irradiation (1E12 N/cm2)
Parameter Line Reg @ 1.5V TO 15V; IL =10mA
Units
(%)
54
Un-biased Irradiation
55
Un-biased Irradiation
56
Un-biased Irradiation
64
Un-biased Irradiation
66
Un-biased Irradiation
69
Control Unit
70
Control Unit
Un-biased Irradiation Statistics
Average Un-biased
Std-Dev Un-biased
Ps90%/90% (+KTL) Un-biased
Ps90%/90% (-KTL) Un-biased
Specification MIN
Status (Measurements)
Specification MAX
Status (Measurements)
Status (-KTL) Un-biased
Status (+KTL) Un-biased
Total Fluence (neutrons/cm 2)
0
1.E+12
0.00000
0.03120
0.01147
0.02333
0.00076
0.03096
0.00771
0.03432
0.00771
0.02495
0.01344
-0.00153
0.00038
0.00000
0.00553
0.00495
0.01911
-0.00805
0.02895
0.00462
0.04163
0.01627
0.2
PASS
PASS
0.25
PASS
PASS
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Load Reg (%) @ 3V, 10mA≤ IL ≤ 1.5A
0.3500
0.3000
Specification MAX
0.2500
Ps90%/90% (+KTL) Un-biased
0.2000
0.1500
Average Un-biased
0.1000
0.0500
Ps90%/90% (-KTL) Un-biased
0.0000
0.E+00
5.E+11
Total Fluence
1.E+12
2.E+12
(neutrons/cm2)
Figure 5.4: Plot of Load Regulation @ (VIN – VOUT) = 3V, 10mA ≤ IOUT ≤ 1.5A versus Total
Fluence
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Table 5.4: Raw data table for Load Regulation @ (VIN – VOUT) = 3V, 10mA ≤ IOUT ≤ 1.5A of preand post-irradiation (1E12 N/cm2)
Parameter Load Reg @ 3V;IL from 10mA to 1.5A
Units
(%)
54
Un-biased Irradiation
55
Un-biased Irradiation
56
Un-biased Irradiation
64
Un-biased Irradiation
66
Un-biased Irradiation
69
Control Unit
70
Control Unit
Un-biased Irradiation Statistics
Average Un-biased
Std-Dev Un-biased
Ps90%/90% (+KTL) Un-biased
Ps90%/90% (-KTL) Un-biased
Specification MIN
Status (Measurements)
Specification MAX
Status (Measurements)
Status (-KTL) Un-biased
Status (+KTL) Un-biased
Total Fluence (neutrons/cm 2)
0
1.E+12
0.04380
0.06067
0.06011
0.07907
0.04715
0.07712
0.04800
0.06261
0.05119
0.06625
0.04720
0.04988
0.06647
0.06450
0.05005
0.00621
0.06707
0.03303
0.06915
0.00844
0.09228
0.04601
0.3
PASS
PASS
0.3
PASS
PASS
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1.6000
Dropout Voltage (V) @ IL = 1.5A
Specification MAX
1.5000
Ps90%/90% (+KTL) Un-biased
1.4000
1.3000
Average Un-biased
1.2000
Ps90%/90% (-KTL) Un-biased
1.1000
1.0000
0.E+00
5.E+11
1.E+12
2.E+12
Total Fluence (neutrons/cm2)
Figure 5.5: Plot of Dropout Voltage @ ∆VREF = 1%, IOUT = 1.5A versus Total Fluence
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Table 5.5: Raw data table for Dropout Voltage @ ∆VREF = 1%, IOUT = 1.5A of pre- and postirradiation (1E12 N/cm2)
Parameter
Dropout Voltage at 1.5A
Total Fluence (neutrons/cm 2)
Units
(V)
0
1.E+12
54
Un-biased Irradiation
1.09636
1.11244
55
Un-biased Irradiation
1.10142
1.11887
56
Un-biased Irradiation
1.10550
1.12360
64
Un-biased Irradiation
1.09505
1.11323
66
Un-biased Irradiation
1.08863
1.10577
69
Control Unit
1.09680
1.10008
70
Control Unit
1.10742
1.10998
Un-biased Irradiation Statistics
Average Un-biased
1.09739
1.11478
Std-Dev Un-biased
0.00643
0.00677
Ps90%/90% (+KTL) Un-biased
1.11502
1.13335
Ps90%/90% (-KTL) Un-biased
1.07977
1.09621
Specification MIN
Status (Measurements)
Specification MAX
1.50
1.55
Status (Measurements)
PASS
PASS
Status (-KTL) Un-biased
Status (+KTL) Un-biased
PASS
PASS
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2.6000
Current Limit (A) @ VIN - VOUT = 5V
Ps90%/90% (+KTL) Un-biased
2.4000
2.2000
Average Un-biased
2.0000
Ps90%/90% (-KTL) Un-biased
1.8000
1.6000
Specification MIN
1.4000
1.2000
1.0000
0.E+00
5.E+11
1.E+12
2.E+12
Total Fluence (neutrons/cm2)
Figure 5.6: Plot of Current Limit @ (VIN – VOUT) = 5V versus Total Fluence
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Table 5.6: Raw data table for Current Limit @ (VIN – VOUT) = 5V of pre- and post-irradiation (1E12
N/cm2)
Parameter
Units
54
55
56
64
66
69
70
Current Limit @ VIN - VOUT = 5V
Total Fluence (neutrons/cm 2)
(A)
0
1.E+12
Un-biased Irradiation
2.27413
2.28915
Un-biased Irradiation
2.07586
2.09228
Un-biased Irradiation
2.04867
2.06558
Un-biased Irradiation
2.27556
2.29695
Un-biased Irradiation
2.23527
2.25298
Control Unit
2.24102
2.23374
Control Unit
2.04885
2.04079
Un-biased Irradiation Statistics
Average Un-biased
2.18190
2.19939
Std-Dev Un-biased
0.11082
0.11161
Ps90%/90% (+KTL) Un-biased
2.48576
2.50542
Ps90%/90% (-KTL) Un-biased
1.87804
1.89336
Specification MIN
1.5
1.5
Status (Measurements)
PASS
PASS
Specification MAX
Status (Measurements)
Status (-KTL) Un-biased
Status (+KTL) Un-biased
PASS
PASS
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Current Limit (A) @ VIN - VOUT = 25V
0.1600
Ps90%/90% (+KTL) Un-biased
0.1400
0.1200
Average Un-biased
0.1000
Ps90%/90% (-KTL) Un-biased
0.0800
0.0600
Specification MIN
0.0400
0.E+00
5.E+11
1.E+12
2.E+12
Total Fluence (neutrons/cm2)
Figure 5.7: Plot of Current Limit @ (VIN – VOUT) = 25V versus Total Fluence
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Table 5.7: Raw data table for Current Limit @ (VIN – VOUT) = 25V of pre- and post-irradiation (1E12
N/cm2)
Parameter
Units
54
55
56
64
66
69
70
Current Limit VIN - VOUT = 25V
Total Fluence (neutrons/cm 2)
(A)
0
1.E+12
Un-biased Irradiation
0.14140
0.14133
Un-biased Irradiation
0.14200
0.14241
Un-biased Irradiation
0.14098
0.14184
Un-biased Irradiation
0.14075
0.14295
Un-biased Irradiation
0.14040
0.14245
Control Unit
0.14118
0.14348
Control Unit
0.14051
0.14229
Un-biased Irradiation Statistics
Average Un-biased
0.14111
0.14220
Std-Dev Un-biased
0.00062
0.00062
Ps90%/90% (+KTL) Un-biased
0.14280
0.14391
Ps90%/90% (-KTL) Un-biased
0.13941
0.14049
Specification MIN
0.05
0.047
Status (Measurements)
PASS
PASS
Specification MAX
Status (Measurements)
Status (-KTL) Un-biased
Status (+KTL) Un-biased
PASS
PASS
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Min. Load Current (mA) @ VIN - VOUT = 25V
12.00
Specification MAX
10.00
8.00
Ps90%/90% (+KTL) Un-biased
6.00
Average Un-biased
4.00
Ps90%/90% (-KTL) Un-biased
2.00
0.00
0.E+00
5.E+11
Total Fluence
1.E+12
2.E+12
(neutrons/cm2)
Figure 5.8: Plot of Minimum Load Current @ (VIN – VOUT) = 25V versus Total Fluence
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Table 5.8: Raw data table for Minimum Load Current @ (VIN – VOUT) = 25V of pre- and postirradiation (1E12 N/cm2)
Parameter Min. Load Current @ VIN-VOUT = 25V
Units
(mA)
54
Un-biased Irradiation
55
Un-biased Irradiation
56
Un-biased Irradiation
64
Un-biased Irradiation
66
Un-biased Irradiation
69
Control Unit
70
Control Unit
Un-biased Irradiation Statistics
Average Un-biased
Std-Dev Un-biased
Ps90%/90% (+KTL) Un-biased
Ps90%/90% (-KTL) Un-biased
Specification MIN
Status (Measurements)
Specification MAX
Status (Measurements)
Status (-KTL) Un-biased
Status (+KTL) Un-biased
Total Fluence (neutrons/cm 2)
0
1.E+12
2.86230
2.87291
2.78085
2.79063
2.77740
2.78933
2.82502
2.82364
2.87360
2.86131
2.75930
2.76370
2.77200
2.77476
2.82383
0.04461
2.94616
2.70150
2.82756
0.03885
2.93408
2.72105
10
PASS
PASS
10
PASS
PASS
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130.00
120.00
Specification MAX
Adjust Pin Current (uA)
110.00
100.00
Ps90%/90% (+KTL) Un-biased
90.00
80.00
70.00
Average Un-biased
60.00
50.00
Ps90%/90% (-KTL) Un-biased
40.00
0.E+00
5.E+11
1.E+12
2.E+12
Total Fluence (neutrons/cm2)
Figure 5.9: Plot of versus Adjust Pin Current versus Total Fluence
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Table 5.9: Raw data table for Adjust Pin Current of pre- and post-irradiation (1E12 N/cm2)
Parameter
Adjust Pin Current
Total Fluence (neutrons/cm 2)
Units
(uA)
0
1.E+12
54
Un-biased Irradiation
53.16989
51.46558
55
Un-biased Irradiation
50.52086
48.76309
56
Un-biased Irradiation
50.45754
48.43474
64
Un-biased Irradiation
52.34979
49.97215
66
Un-biased Irradiation
53.11135
51.0384
69
Control Unit
50.82547
50.76115
70
Control Unit
50.17204
50.43983
Un-biased Irradiation Statistics
Average Un-biased
51.92189
49.93479
Std-Dev Un-biased
1.34746
1.34031
Ps90%/90% (+KTL) Un-biased
55.61663
53.60992
Ps90%/90% (-KTL) Un-biased
48.22714
46.25967
Specification MIN
Status (Measurements)
Specification MAX
120
120
Status (Measurements)
PASS
PASS
Status (-KTL) Un-biased
Status (+KTL) Un-biased
PASS
PASS
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Adjust Pin Current Change (uA) @ 1.5V≤ VIN-VOUT≤
15V
6.000
Specification MAX
5.000
4.000
Ps90%/90% (+KTL) Un-biased
3.000
2.000
Average Un-biased
1.000
0.000
Ps90%/90% (-KTL) Un-biased
-1.000
0.E+00
5.E+11
Total Fluence
1.E+12
2.E+12
(neutrons/cm2)
Figure 5.10: Plot of Adjust Pin Current Change @10mA ≤ IOUT ≤ 1.5A, 1.5V ≤ (VIN – VOUT) ≤ 15V
versus Total Fluence
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Table 5.10: Raw data table for Adjust Pin Current Change @10mA ≤ IOUT ≤ 1.5A, 1.5V ≤ (VIN –
VOUT) ≤ 15V of pre- and post-irradiation (1E12 N/cm2)
Parameter Delta Adjust Pin I @ IL=10mA to 1.5A
Units
(uA)
54
Un-biased Irradiation
55
Un-biased Irradiation
56
Un-biased Irradiation
64
Un-biased Irradiation
66
Un-biased Irradiation
69
Control Unit
70
Control Unit
Un-biased Irradiation Statistics
Average Un-biased
Std-Dev Un-biased
Ps90%/90% (+KTL) Un-biased
Ps90%/90% (-KTL) Un-biased
Specification MIN
Status (Measurements)
Specification MAX
Status (Measurements)
Status (-KTL) Un-biased
Status (+KTL) Un-biased
Total Fluence (neutrons/cm 2)
0
1.E+12
-0.28730
-0.16185
-0.41332
-0.25463
-0.17502
-0.13445
-0.13319
-0.10111
-0.30582
-0.16052
-0.18696
-0.17245
-0.32134
-0.07861
-0.26293
0.11137
0.04244
-0.56830
-0.16251
0.05711
-0.00590
-0.31912
5
PASS
PASS
5
PASS
PASS
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Appendix A
Pictures of one among five samples used in the test.
Figure A1: Top View showing date code
Figure A2: Bottom View showing serial number
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Appendix B
Radiation Bias Connection Table
Table B1: Unbias condition
Pin
Function
Connection
1
2
3
Adjust
VIN
VOUT
Float
Float
Float
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Figure B1: Pin-Out
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Appendix C
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Appendix D
Table D1: Electrical Characteristics of Device-Under-Test Pre-Irradiation
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Table D2: Electrical Characteristics of Device-Under-Test Post-Irradiation
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