INFINEON KP110

KP110
Absolute Pressure Sensor IC
Programmable Temperature Compensation and Calibration
On-Chip Signal Conditioning
Low Cost Bare Die Version
KP110
Data Sheet
357
Features
• Ratiometric analog output
• Programmable transfer function performed
by customer
• High accuracy over a large temperature range
up to ± 1.2 kPa (10 ... 85 °C)
• CMOS compatible surface micromachining
• Bare die
• Specific transfer functions programmable
• Broken wire detection
Type
Ordering Code
Minimum Order Quantity
KP110
Q62705-K432
1 Wafer
Product Description
The KP110 is a miniaturized absolute pressure sensor IC based on the capacitive
principle. It is surface micromachined with a monolithic integrated signal conditioning
circuit realized in the state-of-the-art 0.8 µm BiCMOS technology. As the KP110 is a high
precision IC for cost critical solutions. High accuracy and high sensitivity enable the
dedication in automotive applications as well as consumer products.
In the automotive field the manifold air pressure (MAP) and barometric air pressure
(BAP) are important parameters to compute the air-fuel ratio provided to the engine and
for controlling spark advance to optimize engine efficiency.
Data Book
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KP110
Pad Configuration
(top view of die)
Figure 1
Pad Definitions and Functions
Pad No.
Symbol
Function
1
SERIAL_CLK/
PROG_VOLT
External clock for communication/
Programming voltage
2
DTA_IN
Serial in
3
DTA_OUT
Serial out
4
VCC
Supply voltage
5
(GND)
Alternative ground pad
6
VOUT
Analog pressure signal output
7
GND
0 V circuit ground potential
The pads described in the shaded rows of the table above are used during calibration only.
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KP110
Die Data
•
•
•
•
•
•
•
•
Semiconductor material: Silicon
Surface passivation: Silicon-Nitride
Die thickness: 675 µm
Die dimension: 4.30 mm x 3.34 mm
Pad metallisation: AlSiCu
Size of the bondpads (area free of passivation): 200 x 200 µm
Rear side metallisation of the chips: no used
The rear side of the chip is electrical connected with GND-Pad
Figure 2
Data Book
Functional Block Diagram
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KP110
Functional Description
Digital Programming Interface
The KP110 digital interface is a 3 wire interface consisting of Data_In, Data_Out and
Clock. A write cycle needs 13 Clock cycles. With the first 12 rising edges of the Clock the
signal on Data_In is clocked into a shift register. The first 3 bits are interpreted as a
register address, the last 9 as data bits. The address and the data word are starting with
the LSB, respectively. During the falling edges of the first 11 Clock cycles the Data_In
must be low. The falling edge of the 12th Clock cycle enables the write frame, at this time
Data_In must be high. A 13th Clock cycle is needed for internal purposes, the signal at
Data_In is ignored.
Simultaneously to the write cycle, a read cycle at Data_Out is performed. The signal at
Data_Out is structured the same way as at Data_In, i.e. 3 address bits and 9 data bits.
The selected register for reading depends on the content of the TESTREG register.
The first valid bit at Data_Out appears with the 13th rising edge of the Clock of the
previous write frame.
The following figure shows the timing diagram:
Figure 3
Data Book
Timing Diagram
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KP110
The table below shows the internal registers of the KP110. For the shaded registers
PROM cells exist. The PROM cells are used for permanent programming of the
calibration data.
In addition to the registers in the table below a 12 x 9 bit RAM table exists for the
linearization and definition of the analog pressure signal. This RAM table is also
overlayed by PROM cells.
To write a 9 bit word to the RAM table at first the data content must be written into the
MEMDAT register. In a further write cycle the desired word is addressed by the 4 LSBs
of the MEMCTL register.
Register
Function
MEMDAT
Data bit 0 to 9
MEMCTL
Selection of register of linearization table
GLOBOFF
Global offset compensation
FUSE_NR
Fuse number
TESTREG
Selection of register for read cycle
TGAIN
Temperature gain compensation (linear and square)
TOFFL
Linear temperature offset compensation
TOFFQ
Square temperature offset compensation
MODEREG
Selection of registers for programming of PROM
The shaded registers in the table are overlayed with PROM
Nonvolatile Memory
Each PROM cell consists of a thin polysilicon wire located in a small evacuated cavity.
The cells are called HR-fuses. In order to write a logic "1" to a HR-cell the wire has to be
cut with a current pulse. Since the current can reach up to 100 mA only a single HR-fuse
can be programmed at a time.
The desired bit within a HR-fuse register is addressed by a register called FUSE_NR. In
case of the linearization table the desired PROM register itself is addressed by the
MEMCTL-register. In order to program the GLOBOFF, TGAIN, TOFFL and TOFFQ
register the MODREG-register is used for addressing.
After the correct addressing of PROM register and bit a fuse pulse has to be applied to
pad 1. The requirements for the pulse voltage, length and slew rate are given in the
electrical characteristics.
The exact sequences for RAM/PROM reading/writing are available on request.
Data Book
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KP110
Calibration
The GLOBOFF register is needed to adjust the sensor cell to the internal A/D converter
range. The TGAIN, TOFFL and TOFFQ registers are used for the temperature
compensation. These registers together with the linearization table have to be
programmed to achieve the full sensor performance.
For a proper calibration of the compensation registers and the linearization table it is
proposed to measure the sensor at a minimum of two different temperatures (e.g. 25 °C,
100 °C) and 3 pressures, depending on the desired pressure range. To set up an
appropriate calibration sequence support of the IFX sensor application group is
available.
Maximum Ratings
Parameter
Supply voltage
Supply voltage1)
Supply current
Ambient temperature
Storage temperature
Burst pressure
Voltage at pad DTA_IN
Voltage at pad SERIAL_CLK/
PROG_VOLT during clock mode
Voltage at pad SERIAL_CLK/
PROG_VOLT during fuse mode
Symbol
Limit Values
Unit
min.
max.
VCC
VCC
ICC
TMAX
TS
pBURST
VDTA_IN
VSERIAL_CLK
– 0.3
6.5
V
– 6.52)
16.5
V
10
mA
– 40
140
°C
– 60
150
°C
VPROG
400
– 0.2
3.2
V
– 0.2
3.2
V
– 0.2
12
V
2
mA
"H" output peak current at pad DTA_OUT IOHP
"L" output peak current at pad DTA_OUT IOLP
kPa
–2
mA
1) [email protected] °C
2) Reverse polarity; ICC < 300 mA
Note: Stresse above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
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KP110
ESD Protection
Human Body Model (HBM) tests according to:
Standard EIA/JESD22-A114-B HBM (covers MIL STD 883D)
Parameter
Symbol
ESD-Protection
VESD
Pins VCC, GND, VOUT
Calibration Pins
Limit Values
min.
max.
–
–
±2
±1
Unit
Notes
kV
R = 1.5 kΩ,
C = 100 pF
Operating Range
VCC = 5.0 V, GND = 0 V, TA = -40 °C to +140 °C, unless otherwise specified
Parameter
Supply voltage
Symbol
1)
Output current (pad 6)
2)
Sink
Source2)
Operating temperature
Minimum rated pressure
Maximum rated pressure
Pressure span
Lifetime
Limit Values
Unit
min.
max.
VCC
IOUT
4.5
5.5
TA
pN, MIN
pN, MAX
PSPAN
tLT
– 40
140
°C
10
50
kPa
102
120
kPa
70
105
kPa
V
0.25
0.25
mA
mA
15
year
1) The output of the sensor is ratiometric to the supply voltage VCC within its specified range of 4.50 to 5.50 V.
2) Sink: Current into device. Source: Current driven by device
Electrical Characteristics
VCC = 5.0 V, GND = 0 V, TA = -40 °C to +140 °C, unless otherwise specified
Parameter
Symbol
Limit Values
min.
Output voltage at min. rated pressure1)
typ.
Unit
max.
0.25
0.5
V
4.50
4.85
V
Overall accuracy
VOUT, MIN
VOUT, MAX
ACC
Ratiometricity2)
Rat
-25
Response time3)
tR
Output voltage at max. rated pressure1)
Data Book
7
see
below
kPa
25
mV
5
ms
2003-05
KP110
Electrical Characteristics (cont’d)
VCC = 5.0 V, GND = 0 V, TA = -40 °C to +140 °C, unless otherwise specified
Parameter
Symbol
Limit Values
min.
Output ripple
@ f > 1 kHz
@ f < 1 kHz
Stabilization time4)
typ.
max.
10
5
15
7.5
mVpp
mVpp
20
ms
5
ms
tS
tUP
Power up time
Unit
1) The output of the sensor is ratiometric to the supply voltage VCC within its specified range of 4.50 to 5.50 V.
2) Definition:
V
CC
Rat = V OUT ( @ V CC ) – V OUT ( @5 V ) ---------5V
for VOUT in the range of 0.1 × VDD to 0.9 × VCC
and VCC in the range of 4.50 V to 5.50 V
Ratiometric signal error is not included in the overall accuracy!
3) Response time is defined as the time for the incremental change in the output to go from 10% to 90% of its
final value when subjected to a specified step change in pressure.
4) Stabilization time is defined as the time required for the product to meet the specified output voltage after the
pressure has been stabilized.
Input Pad SERIAL_CLK / PROG_VOLT
Input voltage (fuse mode)
Input capacitance
Input current (clock mode)
Input current (fuse mode) for 10 ms
"H" Input voltage (clock mode)
"L" Input voltage (clock mode)
Input hysteresis
VPROGIN
CSERIAL_CLK
ICKLIN
IVPROG
VHSERIAL_CLK
VLSERIAL_CLK
VCINHYST
–
9
–
V
–
–
160
pF
–5
–
360
µA
10
–
100
mA
2.2
–
–
V
–
–
0.5
V
–
480
–
mV
CDTA_IN
IDTA_IN
VHDTA_IN
VLDTA_IN
VSINHYST
–
2.5
–
pF
–
–
360
µA
2.2
–
3.2
V
–
–
0.5
V
–
480
–
mV
Input Pad DTA_IN
Input capacitance
Input current
"H" Input voltage
"L" Input voltage
Input hysteresis
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KP110
Electrical Characteristics (cont’d)
VCC = 5.0 V, GND = 0 V, TA = -40 °C to +140 °C, unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
VOH
VOL
2.4
–
–
V
–
–
0.3
V
fCLK
tWH
tWL
tISU
tICH
tOD
1
–
250
kHz
2
–
–
µs
2
–
–
µs
500
–
–
ns
500
–
–
ns
0
–
200
ns
tENS
tENH
tVPD
500
–
–
ns
500
–
–
ns
1
–
–
µs
PROG_VOLT hold time
(At Pad SERIAL_CLK)
tVPH
10
–
–
ms
PROG_VOLT slew rate
SR
100
–
–
V/µs
Output Pad DTA_OUT
"H" output voltage (IOH = 1 mA)
"L" output voltage (IOL = -1 mA)
Timing and Tolerances
Clock frequency SERIAL_CLK
CLKS "H" pulse width
CLKS "L" pulse width
DTA_IN setup time (At Pad DTA_IN)
DTA_IN hold time (At Pad DTA_IN)
DTA_OUT output delay time
(At Pad DTA_OUT)
ENABLE setup time (At Pad DTA_IN)
ENABLE hold time (At Pad DTA_IN)
PROG_VOLT setup time
(At Pad SERIAL_CLK)
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KP110
Transfer Function
The sensor can be calibrated with a linear transfer characteristic between the applied
pressure and the output signal:
VOUT = VCC × (a × p + b)
The output is ratiometric. The gain a and the offset b can be calibrated. A feasible
transfer function for the KP110 is for example:
VOUT = 5.000 V × (0.0106 × p – 0.32666)
With the parameters a and b the following calibration is adjusted:
pN, MIN = 40 kPa → VOUT = 0.5 V and
pN, MAX = 115 kPa → VOUT = 4.5 V (@VCC = 5 V)
Figure 4
Possible Transfer Function of the KP110
The output circuit has a low pass filter (min. 1st .Order) with a cut off frequency greater
than 500 Hz. The output circuit is protected against short circuit to VDD and GND.
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KP110
Accuracy
Accuracy is the deviation in actual output from nominal output over the entire pressure
and temperature range according to figure below due to all sources of error including the
following:
• Pressure:
Output deviation from target transfer function over the specified pressure range.
• Temperature:
Output deviation over the temperature range.
• Aging during operating time
The error band is determined by a continuous line through four relevant break points:
Break Point (°C)
Typical Accuracy (kPa)
– 40
± 2.4
10
± 1.2
85
± 1.2
140
± 2.4
Note: The gained output signal accuracy depends largely on the quality of the mounting
and calibration process accomplished by the customer!
Figure 5
Data Book
Overall Accuracy over Temperature
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KP110
Application Circuit
It is recommended, that the circuit of the pressure sensor IC is protected against
overload voltage and electro magnetic influences (like shown in Figure 6).
The output circuitry acts as a low pass decoupling filter between the output of the sensor
IC and the A/D input of the µC.
Note: Circuitries of customer specific applications may deviate from this circuitry.
Figure 6
Typical Application Circuit of the KP110
Component
Range
Typ. value
R1
R2
C1
C2
20 kΩ < R1 < 100 kΩ
59 kΩ
3.9 kΩ < R1 < 100 kΩ
47 kΩ
0 < C1 < 100 nF
0 nF
33 nF < C2 < 100 nF
100 nF
Data Book
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