INFINEON IDH16S60C

IDH16S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Product Summary
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
V DC
600
V
Qc
38
nC
IF
16
A
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
Package
Marking
Pin 1
Pin 2
IDH16S60C
PG-TO220-2
D16S60C
C
A
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Continuous forward current
IF
T C<140 °C
16
RMS forward current
I F,RMS
f =50 Hz
23
T C=25 °C, t p=10 ms
118
Surge non-repetitive forward current,
I F,SM
sine halfwave
Unit
A
Repetitive peak forward current
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
64
Non-repetitive peak forward current
I F,max
T C=25 °C, t p=10 µs
528
i ²t value
∫i 2dt
T C=25 °C, t p=10 ms
69
A2s
Repetitive peak reverse voltage
V RRM
600
V
Diode dv/dt ruggedness
dv/ dt
V R = 0….480V
50
V/ns
Power dissipation
P tot
T C=25 °C
136
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
Mounting torque
Soldering temperature,
wavesoldering only allowed at leads
Rev. 2.0
T sold
M3 and M3.5 screws
60
Mcm
1.6mm (0.063 in.) from
case for 10s
260
°C
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2010-04-27
IDH16S60C
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.1
-
-
62
600
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
junction - ambient
R thJA
leaded
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V DC
I R=0.2 mA
Diode forward voltage
VF
I F=16 A, T j=25 °C
-
1.5
1.7
I F=16 A, T j=150 °C
-
1.7
2.1
V R=600 V, T j=25 °C
-
2
200
V R=600 V, T j=150 °C
-
10
2000
-
38
-
nC
-
-
<10
ns
pF
Reverse current
IR
V
µA
AC characteristics
Total capacitive charge
Qc
Switching time3)
tc
V R=400 V,I F≤I F,max,
di F/dt =200 A/µs,
T j=150 °C
C
V R=1 V, f = MHz
-
650
-
V R=300 V, f =1 MHz
-
100
-
V R=600 V, f =1 MHz
-
100
-
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
3)
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
4)
Rev. 2.0
Only capacitive charge occuring, guaranteed by design.
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2010-04-27
IDH16S60C
2 Diode forward current
P tot=f(T C)
I F=f(T C); T j≤175 °C
parameter: RthJC(max)
parameter: R thJC(max); V F(max)
140
35
120
30
100
25
80
20
I F [A]
P tot [W]
1 Power dissipation
60
15
40
10
20
5
0
0
25
50
75
100
125
150
175
200
25
50
75
T C [°C]
100
125
150
175
200
T C [°C]
3 Typ. forward characteristic
4 Typ. forward characteristic in surge current
I F=f(V F); t p=400 µs
mode
parameter: T j
I F=f(V F); t p=400 µs; parameter: Tj
160
25
25 °C
100 °C
175 °C
-55 °C
-55 °C
150 °C
20
175 °C
120
I F [A]
I F [A]
15
80
25 °C
10
100 °C
40
5
150 °C
0
0
0
0.5
1
1.5
2
2.5
3
VF [V]
Rev. 2.0
0
100 °C 150 °C
page 3
2
4
6
8
V F [V]
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IDH16S60C
5 Typ. forward power dissipation vs.
6 Typ. reverse current vs. reverse voltage
average forward current
I R=f(V R)
P F,AV=f(I F), T C=100 °C, parameter: D =t p/T
parameter: T j
60
101
0.1
0.5
1
0.2
50
100
I R [µA]
P F(AV) [W]
40
30
175 °C
10-1
150 °C
100 °C
20
10-2
25 °C
10
-55 °C
10-3
100
0
0
5
10
15
20
25
200
I F(AV) [A]
300
400
500
600
V R [V]
7 Transient thermal impedance
8 Typ. capacitance vs. reverse voltage
Z thJC=f(t p)
C =f(V R); T C=25 °C, f =1 MHz
parameter: D =t p/T
101
800
700
100
600
0.5
500
0.1
10-1
C [pF]
Z thJC [K/W]
0.2
0.05
0.02
10-2
400
300
single pulse
200
100
10-3
10-5
0
10-4
10-3
10-2
10-1
100
101
102
103
V R [V]
t [s]
Rev. 2.0
10-1
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IDH16S60C
9 Typ. C stored energy
10 Typ. capacitance charge vs. current slope
E C=f(V R)
Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max
40
20
16
30
E c [µJ]
Q c [nC]
12
20
8
10
4
0
0
0
100
200
300
400
500
600
V R [V]
Rev. 2.0
100
400
700
1000
di F/dt [A/µs]
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IDH16S60C
PG-TO220-2: Outline
38
Dimensions in mm/inches
Rev. 2.0
page 6
2010-04-27
IDH16S60C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 7
2010-04-27