SDB20S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide 1 • No reverse recovery 2 3 • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23 IF 2x10 nC A the switching behavior D2PAK • No forward recovery Type Package Ordering Code Marking SDB20S30 D2PAK Q67040-S4374 D20S30 Maximum Ratings, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Symbol Continuous forward current, TC=100°C IF 10 RMS forward current, f=50Hz IFRMS 14 Surge non repetitive forward current, sine halfwave IFSM Value Unit A 36 TC=25°C, tp=10ms IFRM 45 IFMAX 100 i 2t value, TC=25°C, tp=10ms ³i2dt 6.5 A²s Repetitive peak reverse voltage VRRM 300 V Surge peak reverse voltage VRSM 300 Power dissipation, single diode mode, TC=25°C Ptot 65 W Operating and storage temperature Tj , Tstg -55... +175 °C Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current tp=10µs, TC=25°C Rev. 1.2 Page 1 2007-03-27 SDB20S30 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 2.3 @ min. footprint - - 62 P-TO263-3-2: @ 6 cm 2 cooling area 1) - 35 - Characteristics Thermal resistance, junction - case (per leg) RthJC SMD version, device on PCB: RthJA K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Symbol Values min. typ. Unit max. Static Characteristics Diode forward voltage V VF IF=10A, Tj=25°C - 1.5 1.7 IF=10A, Tj=150°C - 1.5 1.9 Reverse current µA IR V R=300V, T j=25°C - 15 200 V R=300V, T j=150°C - 20 1000 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 1.2 Page 2 2007-03-27 SDB20S30 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Symbol Values Unit min. typ. max. Qc - 23 - nC t rr - n.a. - ns AC Characteristics Total capacitive charge 1) V R=200V, IF=10A, diF /dt=-200A/µs, Tj =150°C Switching time2) V R=200V, IF=10A, diF /dt=-200A/µs, Tj =150°C Total capacitance pF C V R=0V, T C=25°C, f=1MHz - 600 - V R=150V, T C=25°C, f=1MHz - 55 - V R=300V, T C=25°C, f=1MHz - 40 - Rev. 1.2 Page 3 2007-03-27 SDB20S30 1 Power dissipation (per leg) 2 Diode forward current (per leg) Ptot = f (TC) IF= f (TC) parameter: Tj≤175 °C 11 70 W A 60 9 50 8 45 7 IF Ptot 55 40 6 35 5 30 25 4 20 3 15 2 10 1 5 0 0 20 40 60 80 100 120 140 0 0 °C 180 TC 20 40 60 80 100 120 140 °C 180 TC 3 Typ. forward characteristic (per leg) 4 Typ. forward power dissipation vs. IF = f (VF) average forward current (per leg) parameter: Tj , tp = 350 µs PF(AV)=f(IF) TC=100°C, d = tp/T 20 32 A W 16 PF(AV) 24 IF 14 12 10 20 d=1 d=0.5 d=0.2 d=0.1 16 -40°C 25°C 100°C 125°C 150°C 8 6 12 8 4 4 2 0 0.6 Rev. 1.2 0.8 1 1.2 1.4 1.6 1.8 2.2 V VF Page 4 0 0 2 4 6 8 10 12 14 18 A IF(AV) 2007-03-27 SDB20S30 5 Typ. reverse current vs. reverse voltage 6 Transient thermal impedance (per leg) (per leg)IR=f(VR ) ZthJC = f (t p) parameter : D = t p/T 10 1 2 10 µA SDP20S30 K/W 10 1 ZthJC 10 0 IR 10 0 10 -1 10 -1 10 D = 0.50 10 150°C 125°C 100°C 25°C -2 0.20 0.10 0.05 10 10 -3 10 -4 50 -2 -3 single pulse 0.02 0.01 100 150 V 200 10 -4 -7 10 300 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VR 7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy (per leg) (per leg)C= f(VR) EC=f(V R) parameter: TC = 25 °C, f = 1 MHz 2.5 450 pF µJ 350 C EC 300 1.5 250 200 1 150 100 0.5 50 0 0 10 Rev. 1.2 10 1 10 2 3 10 V VR Page 5 0 0 50 100 150 200 V 300 VR 2007-03-27 SDB20S30 9 Typ. capacitive charge vs. current slope (per leg)Qc=f(diF/dt) parameter: Tj = 150 °C 22 nC 18 IF*2 IF IF *0.5 Qc 16 14 12 10 8 6 4 2 0 100 200 300 400 500 600 700 800 A/µs 1000 diF /dt Rev. 1.2 Page 6 2007-03-27 SDB20S30 PG-TO220-3-45 (D2Pak): Outline Dimensions in mm/inches Rev. 2.1 page 7 2009-01-07 SDB20S30 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 Page 8 2007-03-27