BFR92T NPN Silicon RF Transistor Preliminary data 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT92T (PNP) 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR92T Marking GFs 1=B Pin Configuration 2=E 3=C Package SC75 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 30 Base current IB 4 Total power dissipation Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 RthJS 290 Value Unit V mA TS 69°C 1) Thermal Resistance Junction - soldering point 2) K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Aug-08-2001 BFR92T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 15 - - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 100 µA hFE 40 100 200 - DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V 2 Aug-08-2001 BFR92T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 3.5 5 - Ccb - 0.38 0.6 Cce - 0.2 - Ceb - 0.7 - AC characteristics (verified by random sampling) Transition frequency fT GHz IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 2 mA, VCE = 6 V, ZS = ZSopt , f = 900 MHz - 1.8 - f = 1.8 GHz - 2.9 - IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz - 16 - f = 1.8 GHz - 10.5 - - 13.5 - - 8 - Power gain, maximum available 1) Gma |S21e|2 Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Aug-08-2001 BFR92T SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.1213 fA BF = 94.733 - NF = 1.0947 - VAF = 30 V IKF = 0.46227 A ISE = 129.55 fA NE = 1.9052 - BR = 10.729 - NR = 0.8983 - VAR = 14.599 V IKR = 0.01 A ISC = 0.75557 fA NC = 1.371 - RB = 14.998 IRB = 0.01652 mA RBM = 7.8145 RE = 0.29088 RC = 0.13793 CJE = 10.416 fF VJE = 0.70618 V MJE = 0.34686 - TF = 26.796 ps XTF = 0.3817 - VTF = 0.32861 V ITF = 4.4601 mA PTF = 0 deg CJC = 946.47 fF VJC = 0.84079 V MJC = 0.4085 - XCJC = 0.13464 - TR = 1.2744 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99545 - TNOM 300 K L1 = 0.762 nH L2 = 0.706 nH L3 = 0.382 nH C1 62 fF C2 84 fF C3 180 fF C4 = 7 C5 = 40 fF C6 = 48 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B Transistor Chip B’ C’ L3 C E’ C6 C2 L1 C5 C3 E EHA07524 Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-08-2001 BFR92T Total power dissipation Ptot = f (TS ) 300 P tot mW 200 TS 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 2 RthJS Ptotmax / PtotDC 10 3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Aug-08-2001 BFR92T Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 0.8 6 GHz pF 8V fT Ccb 4 5V 0.4 3 3V 2 2V 0.2 1 1V 0 0 5 10 V 15 0 0 25 5 10 15 20 25 mA VCB 35 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 22 12 8V dB dB 5V 14 G ma 8V G 5V 3V 6 3V 10 2V 3 2V 6 0 2 -3 1V 1V -2 0 5 10 15 20 25 mA -6 0 35 IC 5 10 15 20 25 mA 35 IC 6 Aug-08-2001 BFR92T Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 21 30 IC=15mA dB 0.9GHz dBm 5V G IP 3 0.9GHz 15 1.8GHz 12 3V 20 4V 2V 15 1.8GHz 9 10 6 1V 5 3 0 0 3 V 6 0 0 12 5 10 15 mA 20 VCE IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 45 dB 30 35 IC=15mA IC =15mA dBm 35 25 S21 G 30 25 8V 5V 3V 2V 1V 20 15 20 8V 5V 3V 2V 1V 15 10 10 5 5 0 0 -5 0 1 2 3 4 5 GHz -5 0 7 f 1 2 3 4 5 GHz 7 f 7 Aug-08-2001